FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC (max) = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 325 mW TJ Junction Temperature 150 °C TSTG Storage Temperature 150 °C Electrical Characteristics Symbol Ta = 25°C unless otherwise noted Parameter Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 75 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 40 V BVEBO 6 Emitter-Base Breakdown Voltage IE=10µA, IC=0 ICBO Collector Cut-off Current VCB=60V, IE=0 hFE * DC Current Gain VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA 35 50 75 100 40 VCE(sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA VBE(sat) * Base-Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA 0.6 fT Current Gain Bandwidth Product IC=20mA, VCE=20V, f=100MHz 300 © 2010 Fairchild Semiconductor Corporation FJX2222A Rev. B2 V 0.01 µA 300 0.3 1.0 V V 1.2 2.0 V V MHz www.fairchildsemi.com 1 FJX2222A — NPN Epitaxial Silicon Transistor May 2010 Symbol Conditions Min. Max. Units Cob Output Capacitance Parameter VCB=10V, IE=0, f=1MHz 4 8 pF NF Noise Figure IC=100µA, VCE=10V, RS=1KΩ, f=1kHz 4 dB tON Turn On Time VCC=30V, IC=150mA, VBE=0.5V, IB1=15mA 35 ns tOFF Turn Off Time VCC=30V, IC=150mA, IB1=IB2=15mA 285 ns * Pulse Test: PW≤300µs, Duty Cycle≤2% © 2010 Fairchild Semiconductor Corporation FJX2222A Rev. B2 www.fairchildsemi.com 2 FJX2222A — NPN Epitaxial Silicon Transistor Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 hFE, DC CURRENT GAIN VCE = 10V 1000 100 10 1 10 100 1000 10 IC = 10 IB VBE(sat) 1 0.1 VCE(sat) 0.01 1 IC[A], COLLECTOR CURRENT 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 f = 1MHz 10 Cob [pF], CAPACITANCE 1000 Figure 2. Collector-Base Saturation Voltage Base-Emitter Saturation Voltage 12 8 6 4 2 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE VCE = 20V 100 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product © 2010 Fairchild Semiconductor Corporation FJX2222A Rev. B2 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain 0 10 www.fairchildsemi.com 3 FJX2222A — NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJX2222A — NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation FJX2222A Rev. B2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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