FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm (typ.) High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the 1.7 to 2.3GHz band. The output stage is partially matched for this device. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Rating Unit DC Input Voltage VDD 12 V DC Input Voltage VGG -7 V Input Power Pin 10 dBm Storage Temperature Tstg -55 to +125 °C Operating Case Temperature Top -40 to +70 °C Fujitsu recommends the following conditions for the reliable operation of GaAs modules: 1. The drain operating voltage (VDD) should not exceed 10 volts. 2. The gate operating voltage (VGG) should not exceed -5 volts. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Frequency Range Output Power at 1dB G.C.P. Symbol Test Conditions Min. f GL Input VSWR VSWRi VDD = 10V VGG = -5V f = 2.2GHz Unit GHz 2.2 P1dB Linear Gain Limit Typ. Max. 35.0 36.0 - dBm 29.0 30.0 - dB - 1.5:1 - - DC Input Current IDD - 1.1 - A DC Input Current IGG - 35 - mA CASE STYLE: VF Edition 1.5 November 2001 G.C.P.: Gain Compression Point 1 FMM5046VF GaAs MMIC IMD vs. OUTPUT POWER -20 -25 ACPR vs. OUTPUT POWER VDS=10V, VGG=-5V, f1=2.14GHz, ∆f=10MHz, -25 -30 -35 ACPR (dBc) IMD (dBc) -30 -35 -40 -45 VDS=10V, VGG=-5V, f1=2.14GHz, W-CDMA, Single Signal -40 5MHz -45 -50 -50 -55 -55 -60 -60 -65 10MHz 20 22 24 26 28 30 32 -70 34 18 20 22 Total Output Power (dBm) OUTPUT POWER & IDSRF vs. INPUT POWER VDS=10V, VGG=-5V 38 38 36 36 6dBm 34 2dBm 32 30 -2dBm 28 26 Output Power (dBm) 10dBm Output Power (dBm) 32 34 Output Power (dBm) OUTPUT POWER vs. FREQUENCY 40 24 26 28 30 VDD=10V, VGG=-5V, f=2.2GHz 34 32 30 28 2.0 26 1.8 24 1.6 22 1.4 20 1.2 -6dBm 24 22 -10dBm 20 -10 -8 1.9 2.0 2.1 2.2 -6 -4 -2 0 2 4 Input Power (dBm) 2.3 Frequency (GHz) 2 6 8 10 IDS(RF) (A) 18 FMM5046VF GaAs MMIC S11 S22 +j50 +j100 +j25 0 2.1 2.2 2.5 2.3 1.9 2.0 1.7 1.8 2.5 2.6 2.1 1.7 2.7GHz 2.7GHz 2.2 10 25 2.6 2.3 2.5 2.4 +j250 100 180° -j10 2.6 2.7GHz 2.4 2.7GHz 2.0 2.3 1.7 8 16 2.3 24 32 SCALE FOR |S21| 1.8 -j250 0.01 2.2 -j25 1.7 2.4 -j100 2.1 -j50 SCALE FOR |S12| 2.0 1.9 1.8 +j10 S21 S12 +90° 0° 1.9 2.0 0.02 -90° S-PARAMETERS VDD = 10V, VGG = -5V FREQUENCY S11 (MHZ) MAG ANG 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 .391 .406 .390 .333 .224 .076 .079 .212 .326 .433 .532 .617 .693 153.3 136.9 119.5 100.1 77.6 49.7 -130.6 -151.5 -165.3 -177.1 171.4 160.0 149.0 S21 MAG ANG 33.278 34.121 36.079 38.154 38.680 36.229 31.303 25.761 21.220 17.159 14.146 11.311 9.165 26.0 -4.1 -36.5 -70.3 -107.1 -145.1 178.7 145.9 116.8 88.5 62.3 36.1 11.7 3 S12 MAG ANG .003 .003 .003 .003 .003 .003 .003 .004 .004 .005 .005 .005 .005 100.8 98.4 94.1 91.1 94.1 102.5 110.4 114.8 112.8 105.8 100.0 97.0 91.2 S22 MAG ANG .684 .702 .714 .702 .642 .537 .431 .357 .317 .283 .248 .207 .185 144.4 140.4 134.0 125.1 114.9 107.0 104.6 107.3 111.2 114.6 118.4 127.0 143.7 FMM5046VF GaAs MMIC Case Style "VF" 17.78±0.15 13.46±0.15 0.5±0.3 INDEX 0.5±0.3 8.38 1.0 MIN 4-C 1.52 6.4 PIN ASSIGNMENT 6 5 4-0.5 Symbol 1. 2. 3. 4. 5. 6. VDD RF in VGG NC RF out VDD 6.63 Pin 4 2-0.3 1.0 MIN 2-R 1.22 8.33±0.25 3 2.44 2 6.63 1 (4-R 0.5) 0.125±0.15 Unit: mm(inches) 1.02±0.15 3.0 MAX 0.3±0.15 0.51±0.15 7.88 0.5±0.15 0.5±0.15 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 4