SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT658 PARTMARKING DETAIL FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.2 1 10 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C -55°C +25°C +100°C +175°C VCE =10V 1.6 300 10 20 200 0.8 0.6 100 - (Volts) - Typical Gain 1.0 0.4 1.2 1.0 0.8 0.6 h 0.2 0.4 0.2 0 0.001 1.6 V - (Volts) 1.4 0.01 0.1 10 1 0 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 10 20 1 VCE =10V 0.1 1.2 1.0 0.8 0.01 0.6 0.4 DC 1s 100ms 10ms 1ms 100µs 0.2 0.001 0 0.001 0.01 0.1 1 10 20 1V 10V 100V IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A -500 mA Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 -55 to +150 1000V PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 V IC=-100µ A Collector-Emitter Breakdown Voltage VCEO(SUS) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-320V Collector Cut-Off Current ICES -100 nA VCE=-320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.30 -0.25 -0.50 V V V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-100mA, IB=-10mA* -1.0 V Base-Emitter Turn On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 50 50 40 Transition Frequency fT 50 Output Capacitance Cobo Switching times ton toff MAX. 20 140 2000 3 - 242 IC=-100mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* Typical Typical MHz IC=-20mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-100mA, VCC=-100V IB1=10mA, IB2=-20mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 243 W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC/IB =10 1.4 1.2 V 1.4 0.1 h - Normalised Gain 1.6 0.4 0 0.01 C ABSOLUTE MAXIMUM RATINGS. 0.2 0 E B 1.0 0.6 0.4 IC /IB =10 C 1.2 0.8 0.001 -55°C +25°C +100°C +175°C 1.6 V V - (Volts) 1.4 Tamb=25°C IC/IB =20 IC/IB =50 FZT758 SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT658 PARTMARKING DETAIL FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.2 1 10 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C -55°C +25°C +100°C +175°C VCE =10V 1.6 300 10 20 200 0.8 0.6 100 - (Volts) - Typical Gain 1.0 0.4 1.2 1.0 0.8 0.6 h 0.2 0.4 0.2 0 0.001 1.6 V - (Volts) 1.4 0.01 0.1 10 1 0 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 10 20 1 VCE =10V 0.1 1.2 1.0 0.8 0.01 0.6 0.4 DC 1s 100ms 10ms 1ms 100µs 0.2 0.001 0 0.001 0.01 0.1 1 10 20 1V 10V 100V IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A -500 mA Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 -55 to +150 1000V PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 V IC=-100µ A Collector-Emitter Breakdown Voltage VCEO(SUS) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-320V Collector Cut-Off Current ICES -100 nA VCE=-320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.30 -0.25 -0.50 V V V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-100mA, IB=-10mA* -1.0 V Base-Emitter Turn On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 50 50 40 Transition Frequency fT 50 Output Capacitance Cobo Switching times ton toff MAX. 20 140 2000 3 - 242 IC=-100mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* Typical Typical MHz IC=-20mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-100mA, VCC=-100V IB1=10mA, IB2=-20mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 243 W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC/IB =10 1.4 1.2 V 1.4 0.1 h - Normalised Gain 1.6 0.4 0 0.01 C ABSOLUTE MAXIMUM RATINGS. 0.2 0 E B 1.0 0.6 0.4 IC /IB =10 C 1.2 0.8 0.001 -55°C +25°C +100°C +175°C 1.6 V V - (Volts) 1.4 Tamb=25°C IC/IB =20 IC/IB =50 FZT758