PD - 50071C GA600GD25S SINGLE SWITCH IGBT DUAL INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package • UL recognition pending • Internal thermistor VCES = 250V VCE(on) typ. = 1.25V @VGE = 15V, IC = 600A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 250 600 1200 1200 1200 ±17 2500 1920 1000 -40 to +150 -40 to +125 V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS www.irf.com Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 Mounting Torque, Case-to-Terminal 3,4,5,6 Weight of Module Typ. Max. — — 0.04 — — — 365 0.065 0.20 — 6.0 5.0 1.5 — Units °C/W N. m g 1 08/27/02 GA600GD25S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES ∆TDP R-T25 Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. 250 — — Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage — Forward Transconductance — Collector-to-Emitter Leaking Current — — Diode Forward Voltage - Maximum — — Gate-to-Emitter Leakage Current — Pulse Diode Temp Rise — Thermistor, Positive Temp Coefficient 738 Typ. Max. Units Conditions — — VGE = 0V, IC = 1mA 1.25 1.4 VGE = 15V, IC = 600A 1.25 — V VGE = 15V, IC = 600A, TJ = 125°C — 6.0 IC = 5.0mA, VCE = 6.0V -11 — mV/°C VCE = 6.0V, I C = 5.0mA,TC= 25/125°C 720 — S VCE = 25V, I C = 600A — 2.0 mA VGE = 0V, VCE = 250V — 20 VGE = 0V, VCE = 250V, TJ = 125°C 1.5 1.8 V IF = 300A, VGE = 0V 1.5 — IF = 300A, VGE = 0V, TJ = 125°C — 1.0 µA VGE = ±14V (18V zeners gate-emitter) — 80 °C IC = 300A, t = 150msec, Tc =70°C 820 902 Ω I = 100mA,P = 2.5mW/°C (see note 1) Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 3825 555 1262 1060 950 846 934 17 105 122 86063 9754 1913 314 80 12513 632 Max. Units Conditions 5738 VCC = 200V, VGE = 15V 832 nC IC = 600A 1893 TJ = 25°C — RG1 = 15Ω, RG2 = 0Ω, — ns IC = 600A — VCC = 150V, Inductor load — VGE = ±15V — mJ See Fig. 17, 19 — 250 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 600A — A RG1 = 15Ω — µC RG2 = 0Ω — A/µs VCC = 150V di/dt = 500A/µs Notes: 1. The thermistor has an average rate of change of 7Ω /°C between 20°C and 125°C. Consult U.S. Sensor data sheet for P821GS1K for details 2 www.irf.com GA600GD25S 500 For both: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified LOAD CURRENT (A) 400 Power Dissipation = 333 W 300 Square wave: 60% of rated voltage 200 I 100 Ideal diodes 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector Current (A) I C , Collector-to-Emitter Current (A) 10000 10000 1000 1000 TJ = 125 °C 100 TJ = 25 °C 10 0.6 V GE = 15V 80µs PULSE WIDTH 0.8 1.0 1.2 1.4 1.6 1.8 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 125 °C 100 TJ = 25 °C 10 1 4.0 V CE = 25V 80µs PULSE WIDTH 5.0 6.0 7.0 8.0 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 GA600GD25S 2.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 800 600 400 200 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH 1000A IC =1200 A 1.5 IC = 600 A IC = 300 A 1.0 0.5 -60 -40 -20 Fig. 4 - Maximum Collector Current vs. Case Temperature 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) TC , Case Temperature ( °C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (ZthJC ) 0.1 D = 0.50 PDM 0.20 t 1 t2 0.10 0.05 0.02 0.01 Notes: 1. Duty factor D = t / t 1 2 SINGLE PULSE (THERMAL RESPONSE) 2. Peak TJ = PDMx Z thJC + TC 0.01 0.0001 A 0.001 0.01 0.1 1 10 100 1000 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA600GD25S VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 120000 Cies 80000 Coes 40000 Cres 20 VGE , Gate-to-Emitter Voltage (V) 160000 0 1 10 200V VCC = 250V 400V I C = 600A 16 12 8 4 0 100 0 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 3000 4000 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1000 150 V CC = 150V V GE = 15V TJ = 25 °C I C = 600A RG = 15Ω; RG2 = 0Ω V GE = 15V V CC = 150V Total Switching Losses (mJ) Total Switching Losses (mJ) 2000 QG , Total Gate Charge (nC) 140 I C = 1000A IC = 600A 100 130 120 110 I C = 300A 10 0 10 20 30 RG , Gate Resistance 40 ( Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 50 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 GA600GD25S 1500 R RG1 = Ω;RG2 = 0 Ω G =15 T J = 125 ° C VCC = 150V VGE = 15V IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 320 240 160 80 1200 900 200 400 600 800 1000 SAFE OPERATING AREA 600 300 0 0 VGE = 17V 20V TJ = 125°C VCE measured at terminal ( Peak Voltage ) A 0 1200 0 I C , Collector Current (A) 100 200 300 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 1000 20000 I F = 600A 16000 TJ = 125°C I F = 300A TJ = 25°C Q RR - (nC) Instantaneous Forward Current - I F (A) I F = 1000A 100 12000 8000 VR = 150V TJ = 125°C TJ = 25°C 10 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage Drop - V FM (V) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 4000 300 400 500 600 di f /dt - (A/µs) Fig. 14 - Typical Stored Charge vs. dif/dt www.irf.com GA600GD25S 120 360 IF = 1000A IF = 600A IF = 600A 100 I F = 300A I IRRM - (A) t rr - (ns) 340 IF = 1000A 320 300 IF = 300A 80 60 VR = 150V TJ = 125°C TJ = 25°C 280 300 VR = 150V TJ = 125°C TJ = 25°C 400 500 600 di f /dt - (A/µs) Fig. 15 - Typical Reverse Recovery vs. dif/dt www.irf.com 40 300 400 500 600 di f /dt - (A/µs) Fig. 16 - Typical Recovery Current vs. dif/dt 7 GA600GD25S 90% 10% Vge VC 90% td(off) 10% IC 5% tf tr t d(on) t=5µs Eon Fig. 17a - Test Circuit for Measurement of Eoff Ets= (Eon +Eoff ) ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Qrr = Ic trr id Icdtdt tx ∫ +Vg tx 10% Irr 10% Vcc Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 VceieIcdt dt Eon = Vce t1 t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 Erec = Vd VdidIcdt dt t3 t4 Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com GA600GD25S Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 0 - 150V 150V 2 X IC @25°C 50V 6000µF 100V Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 19. Pulsed Collector Current Test Circuit 9 GA600GD25S Notes: Repetitive rating; VGE = 17V, pulse width limited by max. junction temperature. See fig. 17 For screws M6. Pulse width 50µs; single shot. Case Outline — DUAL INT-A-PAK x x 6 [ . 2 3 6 ] MAX. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/02 10 www.irf.com