GMM 3x100-01X1 Three phase full Bridge VDSS =100V = 90A ID25 RDSon typ. = 7.5mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C VGS 100 V ± 20 V TC = 25°C TC = 90°C 90 68 IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 90 68 Symbol Conditions A A A A iv ID25 ID90 Characteristic Values (TVJ = 25°C, unless otherwise specified) min. on chip level at VGS = 10 V TVJ = 25°C TVJ = 125°C VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 65 V; ID = 90 A RthJC RthJH 7.5 14 8.5 4.5 V 1 µA mA 0.2 µA 0.1 a mW mW nC nC nC 130 95 290 55 ns ns ns ns 0.4 0.4 0.007 mJ mJ mJ t 90 30 30 with heat transfer paste (IXYS test setup) 1.3 1.0 1.6 Features • MOSFETs in trench technology: -low RDSon -optimized intrinsic reverse diode • package: -high level of integration -high current capability -aux. terminals for MOSFET control -terminals for soldering or welding connections -isolated DCB ceramic base plate with optimized heat transfer •Space and weight savings K/W K/W VDS = ID·(RDS(on) + 2RPin to Chip) t 1) inductive load VGS = 10 V; VDS = 48 V ID = 70 A; RG = 33 Ω; TJ = 125°C n Eon Eoff Erecoff max. 2.5 TVJ = 25°C TVJ = 125°C e td(on) tr td(off) tf typ. t RDSon 1) AC drives • in automobiles -electric power steering -starter generator • in industrial vehicles -propulsion drives -fork lift drives • in battery supplied equipment e Symbol IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307 1-3 GMM 3x100-01X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD (diode) IF = 70 A; VGS = 0 V trr QRM IRM IF = 70 A; -diF/dt = 800 A/µs; VR = 48 V 0.9 1.2 55 0.95 33 V ns µC A Component Symbol Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 TJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions °C °C 1000 V~ 50 - 250 N max. coupling capacity between shorted pins and back side metallization e typ. tbd 1) Weight mW 160 pF VDS = ID·(RDS(on) + 2RPin to Chip) 25 g t e n t a t 1) -55...+175 -55...+125 iv CP A Characteristic Values min. Rpin to chip 75 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307 2-3 e n t a t iv e GMM 3x100-01X1 Ordering Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code Standard GMM 3x100-01X1 - SMD GMM 3x100-01X1 Blister 28 509 035 t Leads SMD IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307 3-3