Gem micro GS4953 semiconductor Inc. Pb Pb free Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) PRODUCT SUMMARY VDSS ID -30V -5.3A RDS(on) (m-ohm) Max 60 @ VGS = -10V, ID=-5.3A 90 @ VGS = -4.5V,ID=-3.9A Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Lead free product is acquired • Surface mount Package Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6: Drain 1 Pin 7 / 8: Drain 2 • SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V -5.3 A ID IDM Drain Current (Continuous) -20 A PD Total Power Dissipation @TA=25 C 2.0 W IS Maximum Diode Forward Current -1.9 A -55 to +150 °C 50 °C/W RθJA Drain Current (Pulsed) a o Tj, Tstg Operating Junction and Storage Temperature Range b Thermal Resistance Junction to Ambient (PCB mounted) a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board DS-GS4953-REV00 Aa1 Ratings 1 Gem micro GS4953 semiconductor Inc. Pb Pb free Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol • Characteristic Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA VDS=VGS, ID=-250uA -1 -1.4 -3 V VGS=-10V, ID=-5.3A - 49 60 VGS=-4.5V, ID=-3.9A - 66 90 VDS=-10V, ID=-5.3A - 11 - - 504 - - 68 - - 56 - - 12 - - 2.3 - b CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gFS Forward Transconductance • DYNAMIC mΩ Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHz PF CHARACTERISTICSC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.4 - td(on) Turn-on Delay Time - 8.1 - tr Turn-on Rise Time VDD=-15V, RL=5Ω, ID=-3A, - 3.3 - td(off) Turn-off Delay Time VGEN=-10V, RG=6Ω - 29.3 - - 5.6 - - - -1.3 tf S CHARACTERISTICSC • SWITCHING VDS=-15V, ID=-3.6A, VGS=-10V Turn-off Fall Time nC nS Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1.9A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% DS-GS4953-REV00 Aa1 Min. OFF CHARACTERISTICS • ON • Test Conditions 2 V Gem micro semiconductor Inc. Characteristics Curve DS-GS4953-REV00 Aa1 3 GS4953 Pb Pb free Gem micro semiconductor Inc. Characteristics Curve DS-GS4953-REV00 Aa1 4 GS4953 Pb Pb free