RENESAS H7N0312LM

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Customer Support Dept.
April 1, 2003
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H7N0312LD, H7N0312LS, H7N0312LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1572A(Z)
2nd. Edition
Aug. 2002
Features
• Low on-resistance
• RDS(on) = 2.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
4
D
1
G
1
S
2
3
H7N0312LS
2
3
H7N0312LD
1
2
3
H7N0312LM
1. Gate
2. Drain
3. Source
4. Drain
H7N0312LD, H7N0312LS, H7N0312LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
85
A
340
A
85
A
125
W
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Note 1
Note 2
Channel dissipation
Pch
Channel to Case Thermal Impedance
θch-c
1.0
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Rev.1, Aug. 2002, page 2 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
RDS(on)
—
2.6
3.3
mΩ
ID = 42.5 A, VGS = 10 V
—
4.0
5.8
mΩ
ID = 42.5 A, VGS = 4.5 V
|yfs|
75
125
—
S
ID = 42.5 A, VDS = 10 V
Input capacitance
Ciss
—
6900
—
pF
VDS = 10 V
Output capacitance
Coss
—
1750
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
820
—
pF
f = 1 MHz
Total gate charge
Qg
—
115
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
24
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
24
—
nc
ID = 85 A
Turn-on delay time
td(on)
—
45
—
ns
VGS = 10 V, ID = 42.5 A
Rise time
tr
—
380
—
ns
RL = 0.24 Ω
Turn-off delay time
td(off)
—
125
—
ns
Rg = 4.7 Ω
Fall time
tf
—
50
—
ns
Body–drain diode forward voltage
VDF
—
0.92
—
V
IF = 85 A, VGS = 0
—
75
—
ns
IF = 85 A, VGS = 0
diF/ dt = 50A/µs
resistance
Forward transfer admittance
Body–drain diode reverse recovery trr
time
Note1
Note1
Note1
Note1
Notes: 1. Pulse test
Rev.1, Aug. 2002, page 3 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
ID (A)
1000
120
100
80
40
DC
1m
s 100
Op
µs
µs
10
1
tio PW
n
=
10
ms
Operation in
this area is
limited by RDS(on)
0.1
0
50
100
150
Case Temperature
200
Tc (°C)
Tc = 25°C
0.01 1 shot Pulse
0.1 0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 V
5V
4V
60
3.0 V
40
2.8 V
20
0
80
60
40
20
8
VDS
10
(V)
Tc = 75°C
25°C
-25°C
VGS = 2.5 V
2
4
6
Drain to Source Voltage
Rev.1, Aug. 2002, page 4 of 11
(A)
3.2 V
Pulse Test
V DS = 10 V
Pulse Test
3.5 V
ID
80
Typical Transfer Characteristics
100
Drain Current
100
Drain Current ID (A)
10
era
Drain Current
Channel Dissipation Pch (W)
160
0
1
2
3
Gate to Source Voltage
4
VGS
5
(V)
H7N0312LD, H7N0312LS, H7N0312LM
300
200
I D = 50 A
100
Static Drain to Source on State Resistance
RDS(on) (mΩ)
0
20 A
4
8
12
Gate to Source Voltage
10 A
16
20
4
10 A, 20 A
V GS = 4.5 V
3
10 A, 20 A, 50 A
2
10 V
1
0
-25
0
25
50
75
30
10
VGS = 4.5 V
3
10 V
1
0.1 0.3
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
7
Pulse Test
I D = 50 A
6
5
Drain to Source on State Resistance
RDS(on) (mΩ)
400
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
100 125 150
Case Temperature Tc
(°C)
1
3 10 30 100 300 1000
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
(mV)
500
Drain to Source Voltage VDS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1000
300
Tc = -25°C
100
30
75°C
25°C
10
3
1
V DS = 10 V
Pulse Test
0.3
0.1
0.1
0.3
1
3
Drain Current
10
30
100
ID (A)
Rev.1, Aug. 2002, page 5 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Body-Drain Diode Reverse
Recovery Time
10000
Capacitance C (pF)
Ciss
50
20
1
3
10
30
V DD = 25 V
10 V
5V
40
80
120
VDS (V)
Gate Charge
Rev.1, Aug. 2002, page 6 of 11
160
Qg (nc)
10
15
20
25
4
0
200
30
(V)
Switching Characteristics
V GS = 10 V , VDS = 10 V
500 Rg = 4.7 Ω, duty < 1 %
(V)
12
8
10
5
1000
20
V GS
20
0
0
Drain to Source Voltage VDS
16
V DS
300
(A)
I D = 85 A
VDD = 5 V
10 V
25 V
Crss
100
100
Dynamic Input Characteristics
40
30
1000
Switching Time t (ns)
0.3
Reverse Drain Current IDR
50
Coss
VGS = 0
f = 1 MHz
VGS
10
0.1
3000
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
Gate to Source Voltage
Reverse Recovery Time trr (ns)
100
Drain to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
200
tr
t d(off)
100
50
tf
t d(on)
20
10
0.1
0.3
1
3
Drain Current
10
ID
30
(A)
100
H7N0312LD, H7N0312LS, H7N0312LM
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
100
80
10 V
60
V GS = 0 V
5V
40
20
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage VSD
2.0
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.03
θ ch - c(t) = γs (t) • θ ch - c
θ ch - c = 1.0°C/ W, Tc = 25°C
0.1
0.05
0.02
e
1
0.0 puls
t
o
h
1s
PDM
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.1, Aug. 2002, page 7 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Package Dimensions
• H7N0312LD
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.0 ± 0.5
10.0
0.2
0.86 +– 0.1
11.3 ± 0.5
1.37 ± 0.2
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.49 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.1, Aug. 2002, page 8 of 11
LDPAK (L)
—
—
1.4 g
H7N0312LD, H7N0312LS, H7N0312LM
• H7N0312LS
Unit: mm
2.54 ± 0.5
7.8
7.0
(1.5)
0.3
10.0 +– 0.5
0.2
0.1 +– 0.1
2.2
2.49 ± 0.2
0.2
0.86 +– 0.1
2.54 ± 0.5
1.7
7.8
6.6
1.3 ± 0.2
0.3
3.0 +– 0.5
1.3 ± 0.2
8.6 ± 0.3
(1.5)
1.37 ± 0.2
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(1)
—
—
1.3 g
Rev.1, Aug. 2002, page 9 of 11
H7N0312LD, H7N0312LS, H7N0312LM
• H7N0312LM
Unit: mm
7.8
7.0
(2.3)
0.3
10.0 +– 0.5
0.2
0.1 +– 0.1
2.2
2.49 ± 0.2
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.3 ± 0.2
2.54 ± 0.5
8.6 ± 0.3
(1.5)
1.37 ± 0.2
7.8
6.6
1.3 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.1, Aug. 2002, page 10 of 11
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
LDPAK (S)-(2)
—
—
1.35 g
H7N0312LD, H7N0312LS, H7N0312LM
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copyright, trademark, or other intellectual property rights for information contained in this document.
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.1, Aug. 2002, page 11 of 11