MICRONAS HAL810

Hardware
Documentation
Data Sheet
®
HAL 810
Programmable Linear
Hall-Effect Sensor
Edition Feb. 6, 2009
DSH000034_003EN
HAL810
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
– Choppered offset compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP05458391.
– VDD modulation protected by Micronas patent
no. EP0953848
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person
or entity of such revision or changes. For further
advice please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL810
DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
1.7.
Introduction
Major Applications
Features
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Solderability and Welding
Pin Connections and Short Descriptions
6
6
8
10
10
11
2.
2.1.
2.2.
2.3.
2.3.1.
2.4.
Functional Description
General Function
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
Calibration of the Angle Sensor
13
13
17
17
17
18
18
19
20
20
20
3.
3.1.
3.2.
3.3.
3.3.1.
3.4.
3.5.
3.6.
3.7.
3.8.
3.9.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Storage and Shelf Life
Absolute Maximum Ratings
Recommended Operating Conditions
Characteristics
Magnetic Characteristics
Open-Circuit Detection
Typical Characteristics
22
22
22
23
24
24
24
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
Application Notes
Application Circuit
Measurement of a PWM Output Signal
Temperature Compensation
Undervoltage Behavior
Ambient Temperature
EMC and ESD
25
25
25
27
28
29
29
5.
5.1.
5.2.
5.3.
5.4.
5.5.
5.6.
Programming of the Sensor
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
30
6.
Data Sheet History
Micronas
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HAL810
DATA SHEET
Programmable Linear Hall-Effect Sensor
Release Note: Revision bars indicate significant
changes to the previous edition.
age of typically 5 V in the ambient temperature range
from −40 °C up to 150 °C. The HAL810 is available in
the very small leaded packages TO92UT-1 and
TO92UT-2.
1. Introduction
1.1. Major Applications
The HAL810 is a member of the Micronas family of
programmable linear Hall sensors. The linear output is
provided as the duty cycle of a pulse-width modulated
output signal (PWM signal).
Due to the sensor’s versatile programming characteristics, the HAL810 is the optimal system solution for
applications such as:
The HAL810 is a universal magnetic field sensor with
a linear output based on the Hall effect. The IC is
designed and produced in sub-micron CMOS technology and can be used for angle or distance measurements if combined with a rotating or moving magnet.
The major characteristics, such as magnetic field
range, sensitivity, output quiescent signal (output duty
cycle at B = 0 mT), and output duty cycle range are
programmable in a non-volatile memory.
– rotary sensors,
The HAL810 features a temperature-compensated
Hall plate with choppered offset compensation, an A/D
converter, digital signal processing, an EEPROM
memory with redundancy and lock function for the calibration data, a serial interface for programming the
EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit as analog offsets, temperature shifts, and mechanical stress
do not lower the sensor accuracy.
– PWM output signal with a refresh rate of typically
125 Hz and up to 11 bit resolution
The HAL810 is programmable by modulating the supply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output signal directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly. This offers a low-cost
alternative for all applications that presently need
mechanical adjustment or laser trimming for calibrating
the system.
In addition, the temperature compensation of the Hall
IC can be suited to all common magnetic materials by
programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables
operation over the full temperature range with high
accuracy.
– contactless potentiometers,
– distance measurements,
– magnetic field and current measurement.
1.2. Features
– high-precision linear Hall effect sensor with digital
signal processing
– multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– open-circuit feature (ground and supply line break
detection)
– temperature characteristics programmable for
matching all common magnetic materials
– programmable clamping function
– programming via modulation of the supply voltage
– operation from −40 °C up to 150 °C ambient temperature
– operation with 4.5 V to 5.5 V supply voltage in specification and functions with up to 8.5 V
– operation with static magnetic fields and dynamic
magnetic fields
– overvoltage and reverse-voltage protection at all
pins
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.
The sensor is designed for hostile industrial and automotive applications and operates with a supply volt-
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HAL810
DATA SHEET
1.3. Marking Code
1.6. Solderability and Welding
The HAL810 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Soldering
Type
HAL810
Temperature Range
During soldering, reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
A
K
Welding
810A
810K
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.4. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
A:TJ = −40 °C to +170 °C
K:TJ = −40 °C to +140 °C
1.7. Pin Connections and Short Descriptions
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 4.5.
on page 24.
Pin
No.
Pin Name
Type
Short Description
1
VDD
IN
Supply Voltage and
Programming Pin
2
GND
3
OUT
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A or K
Package: UT for TO92UT-1/-2
Type: 810
1
Ground
OUT
Push-Pull Output
VDD
Example: HAL810UT-K
→ Type:
810
→ Package:
TO92UT
→ Temperature Range: TJ = −40 °C to +140 °C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
Micronas
OUT
3
2
GND
Fig. 1–1: Pin configuration
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HAL810
DATA SHEET
2. Functional Description
ates a PWM output signal. After detecting a command,
the sensor reads or writes the memory and answers
with a digital signal on the output pin. The PWM output
is switched off during the communication.
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers, converted to a pulse-width modulated output signal, and stabilized by a push-pull output transistor
stage. The function and the parameters for the DSP
are explained in Section 2.2. on page 8.
The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset.
As long as the LOCK register is not set, the output
characteristics can be adjusted by programming the
EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). In the supply
voltage range from 4.5 V to 5.5 V, the sensor gener-
The open-circuit detection provides a defined output
voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and
high offset stability. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
HAL
810
8
VDD
VOUT (V)
The HAL810 is a monolithic integrated circuit which
provides a pulse-width modulated output signal
(PWM). The duty cycle of the PWM signal is proportional to the magnetic flux through the Hall plate.
VDD (V)
2.1. General Function
7
6
5
OUT digital protocol
VDD
PWM
GND
Fig. 2–1: Programming with VDD modulation
VDD
Internally
Stabilized
Supply and
Protection
Devices
Switched
Hall Plate
Temperature
Dependent
Bias
A/D
Converter
Open-Circuit
Detection
Oscillator
Digital
Signal
Processing
Output
Conditioning
OUT
OPA
10 kΩ
EEPROM Memory
Supply
Level
Detection
100 Ω
Protection
Devices
Digital
Output
Lock Control
GND
Fig. 2–2: HAL810 block diagram
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HAL810
DATA SHEET
ADC-READOUT Register
14 bit
Digital
Output
Digital Signal Processing
A/D
Converter
TC
TCSQ
6 bit
5 bit
Digital
Filter
Multiplier
MODE Register
RANGE FILTER
3 bit
3 bit
Adder
Limiter
Output
Conditioning
DCSENSITIVITY
DCOQ
MINDUTY
MAXDUTY
LOCK
14 bit
11 bit
10 bit
11 bit
1 bit
Micronas
Registers
EEPROM Memory
Lock
Control
Fig. 2–3: Details of EEPROM and digital signal processing
Range = 30 mT
Filter = 500 Hz
%
100
Range = 100 mT
Filter = 2 kHz
%
100
Max-Duty = 97%
Max-Out = 90%
Output
Duty
Cycle 80
Output
Duty
Cycle 80
DCSensitivity = 0.3
60
60
DCSensitivity = -1.36
DCOQ = -10%
40
40
DCOQ = 50%
20
20
Min-Out = 10%
Min-Duty = 3%
0
–40 –30 –20 –10 0 10 20
30
0
–150 –100 –50
40 mT
50
100
150 mT
B
B
Fig. 2–4: Example for output characteristics
Micronas
0
Fig. 2–5: Example for output characteristics
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HAL810
DATA SHEET
2.2. Digital Signal Processing and EEPROM
The DSP is the main part of this sensor and performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2–3.
Filter = 2 kHz
2000
1500
ADCREADOUT
1000
Terminology:
MIN-DUTY: name of the register or register value
Min-Duty:
500
name of the parameter
0
The EEPROM registers consist of three groups:
Group 1 contains the registers for the adaptation of
the sensor to the magnetic circuit: Mode for selecting
the magnetic field range and filter frequency, TC and
TCSQ for the temperature characteristics of the magnetic sensitivity.
Group 2 contains the registers for defining the output
characteristics: DCSENSITIVITY, DCOQ, MIN-DUTY,
and MAX-DUTY. The output characteristic of the sensor is defined by these four parameters (see Fig. 2–5
and Fig. 2–6 for examples).
–500
Range 150 mT
–1000
Range 90 mT
Range 60 mT
–1500
Range 30 mT
–2000
–200–150–100 –50
0
50 100 150 200 mT
B
Fig. 2–6: Example for output characteristics
– The parameter DCOQ (Output Quiescent Duty Cycle)
corresponds to the duty cycle at B = 0 mT.
– The parameter DCSensitivity defines the magnetic
sensitivity:
DCSensitivity =
ΔDCOUT * 2048
ΔADC-Readout * 100%
– The output duty cycle can be calculated as follows:
DCOUT = DCSensitivity * ADC-Readout / 2048 * 100% + DCOQ
The output duty cycle range can be clamped by setting
the registers MIN-DUTY and MAX-DUTY in order to
enable failure detection (such as short-circuits to VDD
or GND and open connections).
Group 3 contains the Micronas registers and LOCK
for the locking of all registers. The Micronas registers
are programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency trimming, A/D converter offset
compensation, and several other settings.
An external magnetic field generates a Hall voltage on
the Hall plate. The ADC converts the amplified positive
or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to
a digital value. Positive values correspond to a magnetic north pole on the branded side of the package.
The digital signal is filtered in the internal low-pass filter and is readable in the ADC-READOUT register.
Depending on the programmable magnetic range of
the Hall IC, the operating range of the A/D converter is
from −30 mT…+30 mT up to −150 mT…+150 mT.
8
During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent
output duty cycle and limited according to Min-Duty
and Max-Duty. The result is converted to the duty
cycle of a pulse width modulated signal and stabilized
by a push-pull output transistor stage.
The ADC-READOUT at any given magnetic field
depends on the programmed magnetic field range but
also on the filter frequency. Fig. 2–6 shows the typical
ADC-READOUT values for the different magnetic field
ranges with the filter frequency set to 2 kHz. The relationship between the minimum and maximum
ADC-READOUT values and the filter frequency setting
is listed in the following table.
Filter Frequency
ADC-READOUT Range
80 Hz
−3968…3967
160 Hz
−1985…1985
500 Hz
−5292…5290
1 kHz
−2646…2645
2 kHz
−1512…1511
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HAL810
DATA SHEET
TC and TCSQ
Note: During application design, it should be taken into
consideration that the maximum and minimum
ADC-READOUT is not exceeded during calibration and operation of the Hall IC. Consequently,
the maximum and minimum magnetic fields that
may occur in the operational range of a specific
application should not saturate the A/D converter.
Please note that the A/D converter saturates at
magnetic fields well above, respectively below,
the magnetic range limits. This large safety band
between specified magnetic range and true operational range helps to avoid saturation.
Range
The RANGE bits are the three lowest bits of the
MODE register; they define the magnetic field range
of the A/D converter.
The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaptation is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the
temperature dependence of the magnetic sensitivity
can be matched to the magnet and the sensor assembly. As a result, the output characteristic can be fixed
over the full temperature range. The sensor can compensate for linear temperature coefficients ranging
from about −3100 ppm/K up to 400 ppm/K and quadratic coefficients from about −5 ppm/K² to 5 ppm/K².
Please refer to Section 4.3. on page 23 for the recommended settings for different linear temperature coefficients.
DCSensitivity
Magnetic Field Range
Range
−30 mT…30 mT
0
−40 mT…40 mT
4
−60 mT…60 mT
5
−75 mT…75 mT
1
−80 mT…80 mT
6
−90 mT…90 mT
2
−100 mT…100 mT
7
−150 mT…150 mT
The DCSENSITIVITY register contains the parameter
for the multiplier in the DSP. The DCSensitivity is programmable between −4 and 4. The register can be
changed in steps of 0.00049. DCSensitivity = 1 corresponds to an increase of the output duty cycle by
100% if ADC-READOUT increases by 2048.
For all calculations, the digital value of the A/D converter is used. This digital information is derived
from the magnetic signal and is readable from the
ADC-READOUT register.
DCSensitivity =
3
ΔDCOUT * 2048
ΔADC-Readout * 100%
DCOQ
Filter
The FILTER bits are the three highest bits of the
MODE register; they define the −3 dB frequency of the
digital low pass filter.
−3 dB Frequency
Filter
80 Hz
0
160 Hz
1
500 Hz
2
1 kHz
3
2 kHz
4
The DCOQ register contains the parameter for the
adder in the DSP. DCOQ is the output duty cycle without external magnetic field (B = 0 mT, respectively
ADC-READOUT = 0) and programmable from −100%
to 100%. The register can be changed in steps of
0.0976%.
Note: If DCOQ is programmed as negative values, the
maximum output duty cycle is limited to:
DCOUTmax = DCOQ+100%
Micronas
For calibration in the system environment, a 2-point
adjustment procedure (see Section 2.3.) is recommended. The suitable DCSensitivity and DCOQ values
for each sensor can be calculated individually by this
procedure.
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HAL810
DATA SHEET
Clamping Function
2.3. Calibration Procedure
The output duty cycle range can be clamped in order
to detect failures like shorts of the output signal to VDD
or GND or an open circuit.
2.3.1. General Procedure
The MIN-DUTY register contains the parameter for the
lower limit. The minimum duty cycle is programmable
between 0% and 50% in steps of 0.0488%.
For calibration in the system environment, the application kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming and the corresponding software for the
input of the register values.
The MAX-DUTY register contains the parameter for
the upper limit. The maximum duty cycle is programmable between 0% and 100% in steps of 0.0488%.
In this section, programming of the sensor using this
programming tool is explained. Please refer to
Section 5. on page 25 for information about programming without this tool.
LOCKR
For the individual calibration of each sensor in the customer application, a two-point adjustment is recommended (see Fig. 2–7 for an example). When using
the application kit, the calibration can be done in three
steps:
By setting this 1-bit register, all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation. This bit is active after the first
power-off and power-on sequence after setting the
LOCK bit.
Step 1: Input of the registers which need not be
adjusted individually
Warning: This register cannot be reset!
The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, and
low and high clamping duty cycles are given for this
application.
ADC-READOUT
This 14-bit register delivers the actual digital value of
the applied magnetic field before the signal processing. This register can be read out and is the basis for
the calibration procedure of the sensor in the system
environment.
Therefore, the values of the following registers should
be identical for all sensors of the customer application.
– Filter
(according to the maximum signal frequency)
– Range
(according to the maximum magnetic field at the
sensor position)
– TC and TCSQ
(depends on the material of the magnet and the
other temperature dependencies of the application)
– Min-Duty and Max-Duty
(according to the application requirements)
Write and store the appropriate settings into the
HAL810 registers.
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HAL810
DATA SHEET
Step 2: Calculation of DCOQ and DCSensitivity
2.4. Calibration of the Angle Sensor
The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for DC1
and DC2 result from the application requirements.
The following description explains the calibration procedure using an angle sensor as an example. The
required output characteristic is shown in Fig. 2–7.
Min-Duty ≤ DC1,2 ≤ Max-Duty
– the angle range is from −25° to 25°
– temperature coefficient of the magnet: −500 ppm/K
For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are recommended. The difference of the duty cycle between
calibration point 1 and calibration point 2 should be
more than 70%.
Set the system to calibration point 1 and read the register ADC-READOUT. The result is ADC-Readout1.
Now, set the system to calibration point 2, read the
register ADC-READOUT, and get ADC-Readout2.
With these readouts and the nominal duty cycles DC1
and DC2, for the calibration points 1 and 2, respectively, the values for DCSensitivity and DCOQ are calculated as follows:
DCSensitivity =
DCOQ = DC1 −
DC2 − DC1
ADC-Readout2 − ADC-Readout1
*
2048
100%
%
100
ADC-Readout1 * DCSensitivity * 100%
2048
This calculation has to be done individually for each
sensor.
Next, write and store the calculated values for DCSensitivity and DCOQ into the IC for adjusting the sensor.
The sensor is now calibrated for the customer application. However, the programming can be changed
again and again if necessary.
Output
Duty
Cycle 80
Max-Duty = 95%
Calibration Point 1
60
40
20
Step 3: Locking the Sensor
Min-Duty = 5%
Calibration Point 2
The last step is activating the lock function with the
“LOCK” command. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.
0
–30
–20
–10
0
10
20
30 °
Angle
Fig. 2–7: Example for output characteristics
Warning: This register cannot be reset!
Micronas
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HAL810
DATA SHEET
Step 1: Input of the registers which need not be
adjusted individually
The register values for the following registers are given
for all applications:
– FILTER
Select the filter frequency: 500 Hz
– RANGE
Select the magnetic field range: 30 mT
– TC
For this magnetic material: 6
Software Calibration:
Use the menu CALIBRATE from the PC software and
enter the values 95% for DC1 and 5% for DC2. Set the
system to calibration point 1 (angle 1 = −25°), press
the key “Read ADC-Readout1”, set the system to calibration point 2 (angle 2 = 25°), press the key
“Read ADC-Readout2”, and hit the button “Calculate”.
The software will then calculate the appropriate DCOQ
and DCSensitivity.
– TCSQ
For this magnetic material: 14
This calculation has to be done individually for each
sensor. Now, write the calculated values with the “write
and store” command into the HAL810 for programming the sensor.
– Min-Duty
For our example: 5%
Step 3: Locking the Sensor
– Max-Duty
For our example: 95%
Enter these values in the software, and use the “write
and store” command for permanently writing the values in the registers.
The last step is to activate the lock function with the
“lock” command. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.
Step 2: Calculation of DCOQ and DCSensitivity
Warning: This register cannot be reset!
There are two ways to calculate the values for DCOQ
and DCSensitivity.
Manual Calculation:
Set the system to calibration point 1 (angle 1 = −25°)
and read the register ADC-READOUT. For our example, the result is ADC-Readout1 = −2500.
Next, set the system to calibration point 2
(angle 2 = 25°), and read the register ADC-READOUT
again.
For
our
example,
the
result
is
ADC-Readout2 = +2350.
With these measurements and the targets DC1 = 95%
and DC2 = 5%, the values for DCSensitivity and DCOQ
are calculated as follows
DCSensitivity =
DCOQ = 95% −
12
5% − 95%
2048
= −0.3800
*
2350 + 2500
100%
−2500*(−0.3800)*100%
= 48.61%
2048
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HAL810
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread
Weight approximately 0.12 g
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HAL810
DATA SHEET
Fig. 3–2:
TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
14
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HAL810
DATA SHEET
Fig. 3–3:
TO92UT-2: Dimensions ammopack inline, not spread
Micronas
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HAL810
DATA SHEET
Fig. 3–4:
TO92UT-1: Dimensions ammopack inline, spread
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HAL810
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
3.3. Positions of Sensitive Areas
TO92UT-1/-2
x
center of the package
y
1.5 mm nominal
A4
0.3 mm nominal
Bd
0.3 mm
3.3.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
Micronas
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17
HAL810
DATA SHEET
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−8.5
8.5
V
VDD
Supply Voltage
1
−14.41) 2)
14.41) 2)
V
−IDD
Reverse Supply Current
1
−
501)
mA
VOUT
Output Voltage
3
−55)
−55)
8.53)
14.43) 2)
V
VOUT − VDD
Excess of Output Voltage
over Supply Voltage
3,1
−
2
V
IOUT
Continuous Output Current
3
−10
10
mA
tSh
Output Short Circuit Duration
3
−
10
min
TJ
Junction Temperature Range
−40
−40
1704)
150
°C
°C
NPROG
Number of Programming Cycles
−
100
1)
2)
3)
4)
5)
as long as TJmax is not exceeded
t < 10 min (VDDmin = −15 V for t < 1 min, VDDmax = 16 V for t < 1 min)
as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V)
t < 1000 h
internal protection resistor = 100 Ω
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
1
4.5
5
5.5
V
IOUT
Continuous Output Current
3
−1
−
1
mA
RL
Load Resistor
3
10
−
−
kΩ
CL
Load Capacitance
3
0.33
10
100
nF
18
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Micronas
HAL810
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking of the device,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No. Min.
Typ.
Max.
Unit
IDD
Supply Current
over Temperature Range
1
VDDZ
Overvoltage Protection
at Supply
VOZ
Conditions
−
7
10
mA
1
−
17.5
20
V
IDD = 25 mA, TJ = 25 °C, t = 20 ms
Overvoltage Protection
at Output
3
−
17
19.5
V
IO = 10 mA, TJ = 25 °C, t = 20 ms
Output Duty Cycle
Resolution
3
−
−
11
bit
1)
INL
Non-Linearity of Output Duty
Cycle over Temperature
3
−0.5
0
0.5
%
2)
ΔTK
Variation of Linear
Temperature Coefficient
3
−400
0
400
ppm/k
if TC and TCSQ suitable for the
application
ΔDCMIN-DUTY Accuracy of Minimum Duty
Cycle over Temperature
Range
3
−1
0
1
%
ΔDCMAX-
Accuracy of Maximum Duty
Cycle over Temperature
Range
3
−1
0
1
%
DUTY
VOUTH
Output High Voltage
3
−
4.8
−
V
VDD = 5 V, −1 mA ≤ IOUT ≤ 1 mA
VOUTL
Output Low Voltage
3
−
0.2
−
V
VDD = 5 V, −1 mA ≤ IOUT ≤ 1 mA
fPWM
PWM Output Frequency
over Temperature Range
−
105
125
145
Hz
fADC
Internal ADC Frequency
over Temperature Range
−
110
128
150
kHz
tPOD
Power-Up Time (Time to
reach valid duty cycle)
−
−
−
25
ms
ROUT
Output Resistance over
Recommended Operating
Range
3
−
1
10
Ω
VOUTLmax ≤ VOUT ≤ VOUTHmin
TO92UT Package
Thermal Resistance
−
measured on an 1s0p board
Rthja
Junction to Ambient
−
−
235
Rthjc
Junction to Case
−
−
61
1)
2)
if the Hall IC is programmed accordingly
if more than 50% of the selected magnetic field range are used
Micronas
Feb. 6, 2009; DSH000034_003EN
19
HAL810
DATA SHEET
3.7. Magnetic Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking of the device,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
BOffset
Magnetic Offset
3
−0.5
0
0.5
mT
B = 0 mT, TJ = 25 °C,
unadjusted sensor
ΔBOffset/ΔT
Magnetic Offset Change
due to TJ
−10
0
10
μT/K
B = 0 mT
3.8. Open-Circuit Detection
at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
VOUT
Output Voltage
at Open VDD Line
3
0
0
0.2
V
VDD = 5 V
RL = 10 kΩ to GND
VOUT
Output Voltage
at Open GND Line
3
4.7
4.8
5
V
VDD = 5 V
RL = 10 kΩ to GND
3.9. Typical Characteristics
mA
10
mA
20
VDD = 5 V
15
IDD
IDD
8
10
5
6
0
4
–5
–10
TA = –40 °C
–15
–20
–15 –10
2
TA = 25 °C
TA=150 °C
–5
0
5
10
15
0
–50
20 V
20
50
100
150
200 °C
TA
VDD
Fig. 3–5: Typical current consumption
versus supply voltage
0
Fig. 3–6: Typical current consumption
versus ambient temperature
Feb. 6, 2009; DSH000034_003EN
Micronas
HAL810
DATA SHEET
%
120
mA
10
TA = 25 °C
1/sensitivity
VDD = 5 V
IDD
100
8
80
6
60
4
40
TC = 16, TCSQ = 8
2
TC = 0,
20
TCSQ = 12
TC = –20, TCSQ = 12
TC = –31, TCSQ = 0
0
–1.5 –1.0 –0.5
0.0
0.5
1.0
0
–50
1.5 mA
0
50
100
150
200 °C
TA
IOUT
Fig. 3–7: Typical current consumption
versus output current
mT
1.0
Fig. 3–9: Typical 1/sensitivity
versus ambient temperature
%
1.0
TC = 16, TCSQ = 8
0.8
TC = 0,
BOffset
0.6
0.8
TCSQ = 12
INL 0.6
TC = –20, TCSQ = 12
0.4
0.4
0.2
0.2
–0.0
–0.0
–0.2
–0.2
–0.4
–0.4
–0.6
–0.6
–0.8
–0.8
Range = 30 mT
–1
–50
0
50
100
150
200 °C
–1
–40
TA
Fig. 3–8: Typical magnetic offset
versus ambient temperature
Micronas
–20
0
20
40 mT
B
Fig. 3–10: Typical nonlinearity
versus magnetic field
Feb. 6, 2009; DSH000034_003EN
21
HAL810
DATA SHEET
4. Application Notes
4.2. Measurement of a PWM Output Signal
4.1. Application Circuit
The magnetic field information is coded in the duty
cycle of the PWM signal. The duty cycle is defined as
the ratio between the high time “s” and the period “d” of
the PWM signal (see Fig. 4–2).
For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor each between ground and
the supply voltage, respectively the output pin. In addition, the input of the controller unit should be pulleddown with a 10 kΩ resistor and a ceramic 4.7 nF
capacitor.
Please note: The PWM signal is updated with the falling edge. If the duty cycle is evaluated with a microcontroller, the trigger-level will be the falling edge of
the PWM signal.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12.5 V for 100 ms. All components connected to the
VDD line at this time must be able to resist this voltage.
VDD
Out
d
s
Vhigh
OUT
μC
HAL810
4.7 nF
Vlow
4.7 nF
4.7 nF
GND
10 kΩ
Fig. 4–1: Recommended application circuit
22
Update
time
Fig. 4–2: Definition of PWM signal
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Micronas
HAL810
DATA SHEET
4.3. Temperature Compensation
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table.
Please contact Micronas for more detailed information
on this higher order temperature compensation.
The HAL8x5 and HAL810 contain the same temperature compensation circuits. If an optimal setting for the
HAL8x5 is already available, the same settings may
be used for the HAL810.
Temperature
Coefficient of
Magnet (ppm/K)
TC
TCSQ
Temperature
Coefficient of
Magnet (ppm/K)
TC
TCSQ
−810
0
15
−860
−1
16
−910
−2
16
−960
−3
16
−1020
−4
17
−1070
−5
17
−1120
−6
17
−1180
−7
18
−1250
−8
18
−1320
−9
19
400
31
6
−1380
−10
19
300
28
7
−1430
−11
20
200
24
8
−1500
−12
20
100
21
9
−1570
−13
20
0
18
10
−1640
−14
21
−50
17
10
−1710
−15
21
−90
16
11
−1780
−16
22
−130
15
11
−1870
−17
22
−170
14
11
−1950
−18
23
−200
13
12
−2030
−19
23
−240
12
12
−2100
−20
24
−280
11
12
−2180
−21
24
−320
10
13
−2270
−22
25
−360
9
13
−2420
−24
26
−410
8
13
−2500
−25
27
−450
7
13
−2600
−26
27
−500
6
14
−2700
−27
28
−550
5
14
−2800
−28
28
−600
4
14
−2900
−29
29
−650
3
14
−3000
−30
30
−700
2
15
−3100
−31
31
−750
1
15
Micronas
Feb. 6, 2009; DSH000034_003EN
23
HAL810
DATA SHEET
4.4. Undervoltage Behavior
4.6. EMC and ESD
In a voltage range of below 4.5 V to approximately
3.5 V, the typical operation of the HAL810 is given and
predictable for most sensors. Some of the parameters
may be out of the specification. Below about 3.5 V, the
digital processing is reset. If the supply voltage rises
above approx. 3.5 V once again, a startup time of
about 20 µs elapses, for the digital signal processing
to occur.
The HAL810 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V on-board system (product standard ISO 7637
part 1) are not relevant for these applications.
4.5. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4–1 is recommended. Applications with this arrangement
passed the EMC tests according to the product standard ISO 7637 part 3 (Electrical transient transmission
by capacitive or inductive coupling).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
TJ = TA + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = IDD * VDD * Rth
For typical values, use the typical parameters. For
worst case calculation, use the maximum parameters
for IDD and Rth, and the maximum value for VDD from
the application.
For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA the
temperature difference ΔT = 12.93 K.
For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax is calculated as follows:
TAmax = TJmax − ΔT
24
Feb. 6, 2009; DSH000034_003EN
Micronas
HAL810
DATA SHEET
5. Programming of the Sensor
– Read a register (see Fig. 5–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
5.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with
a serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VDD-line and the output. The bit time for the
VDD-line is defined through the length of the Sync Bit
at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
– Programming the EEPROM cells (see Fig. 5–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rises up to the programming voltage.
tr
tf
VDDH
tp0
logical 0
VDDL
tp1
VDDH
5.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0),
3 bits for the Command (COM), the Command Parity
Bit (CP), 4 bits for the Address (ADR), and the
Address Parity Bit (AP).
tp0
or
tp0
logical 1
VDDL
or
tp0
tp1
Fig. 5–1: Definition of logical 0 and 1 bit
There are different telegram formats:
– Write a register (see Fig. 5–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
Table 5–1: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
VDDL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VDDH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise Time
1
−
−
0.05
ms
tf
Fall Time
1
−
−
0.05
ms
tp0
Bit Time on VDD
1
1.7
1.75
1.8
ms
tp0 is defined through the Sync Bit
tpOUT
Bit Time on Output Pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Voltage Change for Logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
VDDPROG
Supply Voltage for
Programming the EEPROM
1
12.4
12.5
12.6
V
tPROG
Programming Time for EEPROM
1
95
100
105
ms
trp
Rise Time of Programming Voltage
1
0.2
0.5
1
ms
tfp
Fall Time of Programming Voltage
1
0
−
1
ms
tw
Delay Time of Programming Voltage
after Acknowledge
1
0.5
0.7
1
ms
Micronas
Feb. 6, 2009; DSH000034_003EN
Remarks
25
HAL810
DATA SHEET
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VDD
Acknowledge
VOUT
Fig. 5–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VDD
Acknowledge
DAT
DP
VOUT
Fig. 5–3: Telegram for coding a Read command
trp
tPROG
tfp
VDDPROG
ERASE, PROM, and LOCK
Sync
COM
CP
ADR
AP
VDD
Acknowledge
VOUT
tw
Fig. 5–4: Telegram for coding the EEPROM programming
26
Feb. 6, 2009; DSH000034_003EN
Micronas
HAL810
DATA SHEET
5.3. Telegram Codes
Data Bits (DAT)
Sync Bit
The 14 Data Bits contain the register information.
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
The registers use different number formats for the
Data Bits. These formats are explained in Section 5.4.
Command Bits (COM)
In the Write command, the last bits are valid. If, for
example, the TC register (6 bits) is written, only the
last 6 bits are valid.
The Command code contains 3 bits and is a binary
number. Table 5–2 shows the available commands
and the corresponding codes for the HAL810.
In the Read command, the first bits are valid. If, for
example, the TC register (6 bits) is read, only the first
6 bits are valid.
Command Parity Bit (CP)
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the
3 Command Bits is uneven. The parity bit is “0”, if the
number of zeros is even.
This parity bit is “1” if the number of zeros within the
binary number is even. The parity bit is “0” if the number of zeros is uneven.
Address Bits (ADR)
Acknowledge
The Address code contains 4 bits and is a binary number. Table 5–3 shows the available addresses for the
HAL810 registers.
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
Address Parity Bit (AP)
This parity bit is “1” if the number of zeros within the
four Address bits is uneven. The parity bit is “0” if the
number of zeros is even.
Table 5–2: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
4
program all nonvolatile registers (except the lock bits)
ERASE
5
erase all nonvolatile registers (except the lock bits)
LOCK
7
lock the whole device and disable programming
Micronas
Feb. 6, 2009; DSH000034_003EN
27
HAL810
DATA SHEET
5.4. Number Formats
Two’s-complementary number:
Binary number:
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
The most significant bit is given as first, the least significant bit as last digit.
Example: 101001 represents 41 decimal.
Example:
0101001 represents +41 decimal
1010111 represents −41 decimal
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example:
0101001 represents +41 decimal
1101001 represents −41 decimal
Table 5–3: Available register addresses
Register
Code
Data Bits
Format
Customer
Remark
MIN-DUTY
1
10
binary
read/write/program
Minimum Duty Cycle
MAX-DUTY
2
11
binary
read/write/program
Maximum Duty Cycle
DCOQ
3
11
two’s-compl.
binary
read/write/program
Output Duty Cycle at zero
ADC-READOUT
DCSENSITIVITY
4
14
signed binary
read/write/program
Increase of Output Duty
Cycle with ADC-READOUT
MODE
5
6
binary
read/write/program
Range and filter settings
LOCKR
6
1
binary
lock
Lock Bit for customer
registers
ADC-READOUT
7
14
two’s-compl.
binary
read
Output of A/D converter
(internal magnetic signal)
TC
11
6
signed binary
read/write/program
Temperature compensation
coefficient
TCSQ
12
5
binary
read/write/program
Temperature compensation
coefficient
Table 5–4: Micronas registers (read only for customers)
Register
Code
Data Bits
Format
Remark
OFFSET
8
5
two’s-compl. binary
ADC offset adjustment
FOSCAD
9
5
binary
Oscillator frequency adjustment
SPECIAL
13
8
28
special settings
Feb. 6, 2009; DSH000034_003EN
Micronas
HAL810
DATA SHEET
ADC-READOUT
5.5. Register Information
– This register is read only.
MIN-DUTY
– The register range is from −8192 up to 8191.
The register range is from 0 up to 1023.
– The register value is calculated with:
Min-Duty
MIN-DUTY =
100%
5.6. Programming Information
* 2048
If the content of any register (except the lock registers)
is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must
be permanently stored in the EEPROM.
MAX-DUTY
– The register range is from 0 up to 2047.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands is not important.
ERASE and PROM act on all registers in parallel.
– The register value is calculated with:
Max-Duty
MAX-DUTY =
100%
* 2048
If all HAL810 registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
DCOQ
– The register range is from −1024 up to 1023.
– The register value is calculated with:
DCOQ =
DCOQ
100%
* 1024
During all communication sequences, the customer
has to check if the communication with the sensor was
successful. This means that the acknowledge and the
parity bits sent by the sensor have to be checked by
the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent
from the programmer board.
DCSENSITIVITY
– The register range is from −8192 up to 8191.
– The register value is calculated with:
DCSENSITIVITY = DCSensitivity * 2048
TC and TCSQ
– The TC register range is from −31 up to 31.
– The TCSQ register range is from 0 up to 31.
Please refer Section 4.3. on page 23 for the recommended values.
Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment
and programming of HAL810. The LOCK function is active after the next power-up of the sensor. Micronas also recommends sending an
additional ERASE command after sending the
LOCK command.
The success of the Lock Process should be
checked by reading at least one sensor register
after locking and/or by an analog check of the
sensors output signal.
Electrostatic Discharges (ESD) may disturb the
programming pulses. Please take precautions
against ESD.
MODE
– The register range is from 0 up to 63 and contains
the settings for FILTER and RANGE:
MODE = FILTER * 8 + RANGE
Please refer Section 2.2. on page 8 for the available
FILTER and RANGE values.
Micronas
Feb. 6, 2009; DSH000034_003EN
29
HAL810
DATA SHEET
6. Data Sheet History
1. Data Sheet: “HAL 810 Programmable Linear Hall
Effect Sensor”, Aug. 16, 2002, 6251-536-1DS. First
release of the data sheet.
5. Data Sheet: “HAL810 Programmable Linear HallEffect Sensor”, Feb. 6, 2009, DSH000034_003EN.
Fifth release of the data sheet. Major changes:
– package outline dimension diagram updated.
2. Data Sheet: “HAL 810 Programmable Linear Hall
Effect Sensor”, Nov. 22, 2002, 6251-536-2DS. Second release of the data sheet. Major changes:
– Fig. 2–3: Diagram “Details of EEPROM and Digital
Signal Processing” changed
– Fig. 2–5: Diagram “Example for output characteristics” changed
– DCOQ register programmable from −100% to 100%
in steps of 0.0976%
– Clamping function: minimum duty cycle programmable between 0% and 50% in steps of 0.0488%, maximum duty cycle programmable between 0% and
100% in steps of 0.0488%
– Changes in Register Information.
3. Data Sheet: “HAL 810 Programmable Linear Hall
Effect Sensor”, June 24, 2004, 6251-536-3DS. Third
release of the data sheet. Major changes:
– new package diagram for TO92UT-1
– package diagram for TO92UT-2 added
– ammopack diagrams for TO92UT-1/-2 added
– Section 4.2. "Measurement of a PWM Output Signal" added
4. Data Sheet: “HAL810 Programmable Linear HallEffect Sensor”, Feb. 6, 2009, DSH000034_003EN.
Fourth release of the data sheet. Major changes:
– Section 3.1. "Outline Dimensions" updated
– Section 3.3. "Positions of Sensitive Areas" updated
– Section 3.5. "Recommended Operating Conditions"
updated
– Section 3.6. "Characteristics" updated
– Section 4.1. "Application Circuit" updated
– Section 4.5. "Ambient Temperature" updated
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
30
Feb. 6, 2009; DSH000034_003EN
Micronas