HAT2045T Silicon N Channel Power MOS FET High Speed Power Switching Target Specification 5th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G 65 12 34 5 G S S 2 3 MOS1 S S 6 7 MOS2 1, 8 2, 3, 6, 7 4, 5 D Sou G HAT2045T Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 28 V Gate to source voltage VGSS ±12 V Drain current ID 6.0 A 48 A Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 6.0 A Pch Note2 1.0 W Channel dissipation Pch Note3 1.5 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Channel dissipation Note: 2 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s HAT2045T Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 28 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±12 — — V I G = ±100µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±10V, VDS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 28 V, VGS = 0 Gate to source cutoff voltage VGS(off) 0.4 — 1.4 V VDS = 10V, I D = 1mA Static drain to source on state RDS(on) — 0.020 0.025 Ω I D = 3A, VGS = 4V Note4 resistance RDS(on) — 0.027 0.037 Ω I D = 3A, VGS = 2.5V Note4 Forward transfer admittance |yfs| 8 13 — S I D = 3A, VDS = 10V Note4 Input capacitance Ciss — 680 — pF VDS = 10V Output capacitance Coss — 240 — pF VGS = 0 Reverse transfer capacitance Crss — 170 — pF f = 1MHz Turn-on delay time t d(on) — 12 — ns VGS = 4V, ID = 3A Rise time tr — 110 — ns VDD ≅ 10V Turn-off delay time t d(off) — 90 — ns Fall time tf — 100 — ns Body–drain diode forward voltage VDF — 0.85 1.1 V IF =6.0A, VGS = 0 Note4 Body–drain diode reverse recovery time t rr — 40 — ns IF = 6.0A, VGS = 0 diF/ dt =20A/µs Note: 4. Pulse test 3 HAT2045T Package Dimensions Unit: mm 1 4 0.65 0.10 0.22 +0.08 –0.07 0.13 M 0.17 ± 0.05 6.40 ± 0.20 0.07 +0.03 –0.04 5 1.10 Max 8 4.40 ± 0.1 3.00 ± 0.1 0–8° 0.50 ± 0.10 Hitachi code EIAJ JEDEC 4 TTP–8D — — Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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