RENESAS HAT2142H-EL-E

HAT2142H
Silicon N Channel Power MOS FET
Power Switching
REJ03G1194-0700
(Previous: ADE-208-1583E)
Rev.7.00
Sep 07, 2005
Features
•
•
•
•
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS (on) = 35 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
12
1, 2, 3
4
5
34
S S S
1 2 3
Rev.7.00 Sep 07, 2005 page 1 of 7
Source
Gate
Drain
HAT2142H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
100
Unit
V
VGSS
ID
±20
10
V
A
40
10
A
A
10
10
A
mJ
15
150
W
°C
–55 to +150
°C
ID (pulse)
IDR
Note 1
Note 3
Avalanche current
Avalanche energy
IAP
Note 3
EAR
Channel dissipation
Channel temperature
Pch
Tch
Note 2
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
100
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
1
µA
µA
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
2.0
—
—
35
3.5
44
V
mΩ
VDS = 10 V, ID = 1 mA
Note 4
ID = 5 A, VGS = 10 V
Forward transfer admittance
RDS (on)
|yfs|
—
9
38
15
51
—
mΩ
S
ID = 5 A, VGS = 7 V
Note 4
ID = 5 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
2000
175
—
—
pF
pF
Reverse transfer capacitance
Total gate charge
Crss
Qg
—
—
90
32
—
—
pF
nC
VDS = 10 V
VGS = 0
f = 1 MHz
Gate to source charge
Gate to drain charge
Qgs
Qgd
—
—
8.0
7.5
—
—
nC
nC
Turn-on delay time
Rise time
td (on)
tr
—
—
18
11
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
60
9
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.82
50
1.07
—
V
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Note:
4. Pulse test
Rev.7.00 Sep 07, 2005 page 2 of 7
Test Conditions
Note 4
VDD = 50 V
VGS = 10 V
ID = 10 A
VGS = 10 V, ID = 5 A
VDD ≅ 30 V
RL = 6 Ω
Rg = 4.7 Ω
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0
diF/dt = 100 A/µs
Note 4
HAT2142H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
100
10
DC
0
50
100
150
Case Temperature
0.01
0.1 0.3
200
µs
3
10
30 100 300 1000
VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
ID (A)
4.5 V
8
1
Drain to Source Voltage
Pulse Test
10 V
ID (A)
s
=
1
pe 0 m
s
ra
tio
n
µs
Operation in
this area is
limited by RDS (on)
0.1
Tc (°C)
10
4.0 V
8
6
3.8 V
4
2
VGS = 3.5 V
Drain Current
6
Drain Current
m
10
0
O
1
Typical Output Characteristics
4
25°C
0
0
2
4
6
Drain to Source Voltage
10
8
VDS (V)
Pulse Test
300
ID = 5 A
100
2A
1A
0
0
4
8
12
Gate to Source Voltage
Rev.7.00 Sep 07, 2005 page 3 of 7
16
20
VGS (V)
1
2
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
400
0
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Tc = 75°C
2
–25°C
0
VDS (on) (mV)
10
Tc = 25°C
1 shot Pulse
0
Drain to Source Voltage
PW
1
100
Pulse Test
50
VGS = 7 V
10 V
20
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
HAT2142H
100
Pulse Test
5A
80
ID = 1 A, 2 A
60
VGS = 7 V
1 A, 2 A, 5 A
40
10 V
20
0
–25
0
25
50
75
100 125 150
Case Temperature
Tc
100
Tc = –25°C
30
10
75°C
3
25°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
30
100
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10
Typical Capacitance vs.
Drain to Source Voltage
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1
0.3
1
3
10
Reverse Drain Current
30
3000
Ciss
1000
300
Coss
100
Crss
30
10
100
VGS = 0
f = 1 MHz
0
10
16
150
12
VDD = 100 V
50 V
25 V
VDS
100
50
VGS
8
4
VDD = 100 V
50 V
25 V
0
0
8
16
Gate Charge
Rev.7.00 Sep 07, 2005 page 4 of 7
24
32
Qg (nc)
40
50
0
40
500
VGS = 10 V, VDD = 30 V
PW = 5 µs
Switching Time t (ns)
200
VGS (V)
20
ID = 10 A
30
Switching Characteristics
Gate to Source Voltage
250
20
Drain to Source Voltage VDS (V)
IDR (A)
Dynamic Input Characteristics
VDS (V)
3
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
1
200
100
td(off)
50
tr
td(on)
20
10
5
0.1 0.2
tf
0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
HAT2142H
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IF (A)
10
8
10 V
5V
6
VGS = 0
4
2
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
5
IAP = 10 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
4
3
2
1
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSDF (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 8.33°C/W, Tc = 25°C
0.1
0.05
0.03
0.02
1
0.0
D=
PDM
1s
h
p
ot
0.01
10 µ
uls
e
PW
T
PW
T
100 µ
10 m
1m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
15 V
50 Ω
0
Rev.7.00 Sep 07, 2005 page 5 of 7
VDD
HAT2142H
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 30 V
10%
10%
90%
td(on)
Rev.7.00 Sep 07, 2005 page 6 of 7
10%
RL
tr
90%
td(off)
tf
HAT2142H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2142H-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.7.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0