PD 2.506 HFA50HF20 PRELIMINARY HEXFRED TM Ultrafast, Soft Recovery Diode VR = 200V CATHODE Features • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount V F = 0.96V Qrr * = 640nC ANODE di(rec)M/dt * = 980A/µs * 125°C ANODE Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. SMD -1 Absolute Maximum Ratings (per Leg) Parameter VR I F @ TC = 100°C I FSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.C. Reverse Voltage Continuous Forward Current Single Pulse Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 200 50 600 125 -55 to +150 V A W °C Thermal - Mechanical Characteristics Parameter RθJC Wt Junction-to-Case, Single Leg Conducting Weight Typ. Max. Units — 2.6 1.0 — °C/W g Note: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , P.W. = 8.33 ms 4/7/97 HFA50HF20 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage Min. Typ. Max. Units 200 — I RM Max Reverse Leakage Current CT LS Junction Capacitance Series Inductance — — — — — — 0.88 0.96 0.98 1.11 0.75 0.84 — 10 — 1.0 170 310 2.8 — V V µA mA pF nH Test Conditions I R = 100µA I F = 50A See Fig. 1 I F = 100A I F = 50A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 160V VR = 200V See Fig. 3 Measured from center of bond pad to end of anode bonding wire Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb Min. Typ. Max. Units — — — — — — — — — 35 — 62 93 ns 98 150 10 18 A 14 26 260 390 nC 640 960 600 900 A/µs 980 1500 Test Conditions IF = 1.0A, dif /dt = 200A/µs, VR = 30V TJ = 25°C See Fig. TJ = 125°C 5 IF = 50A TJ = 25°C See Fig. TJ = 125°C 6 VR = 200V TJ = 25°C See Fig. TJ = 125°C 7 dif/dt = 200A/µs TJ = 25°C See Fig. TJ = 125°C 8 Lead Assignments : 1 - Cathode 2, 3 - Anode IR Case Style SMD-1 Dimensions in millimeters and (inches) HFA50HF20 1000 TJ = 150°C 100 TJ = 125°C TJ = 150°C 100 TJ = 125°C 10 TJ = 100°C 1 TJ = 75°C 0.1 TJ = 50°C 0.01 T J = 25°C A 0.001 TJ = 25°C 0 40 80 120 160 200 Reverse Voltage - VR ( V ) Fig. 2 - Typical Reverse Current vs. Reverse Voltage A 10 10000 1 0.0 0.4 0.8 1.2 Forward Voltage Drop - V 1.6 2.0 (V) FM Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Junction Capacitance - CT (pF) Instantaneous Forward Current - I (A) F Reverse Current - IR (µA) 1000 TJ = 25°C 1000 A 100 1 10 100 1000 Reverse Voltage - VR ( V ) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance - Z ( K/W ) (K/W) thJC thJC 10 1 D D D D 0.1 = = = = 0.50 0.33 0.25 0.17 PDM D = 0.08 t t 2 N o tes : 1 . D u ty fa cto r D = t / t 1 2 0.01 0.001 0.00001 Single Pulse (Thermal Resistance) 0.0001 1 2. P eak T = P x Z + T J DM th JC C 0.001 0.01 t 1, Rectangular Pulse Duration (Seconds) 0.1 Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics 1 HFA50HF20 100 110 V R = 200V T J = 125°C T J = 25°C IF = 100A 100 I F = 50A I F = 25A I F = 100A I IRRM- (A) t rr - (ns) 90 IF = 50A 80 IF = 25A 10 70 60 V R = 200V T J = 125°C T J = 25°C A 50 100 di f /dt - (A/µs) A 1 100 1000 1000 di f/dt - (A/µs) Fig. 5 - Typical Reverse Recovery vs. dif/dt, Fig. 6 - Typical Recovery Current vs. dif/dt, 10000 3000 V R = 200V T J = 125°C T J = 25°C V R = 200V T J = 125°C T J = 25°C I F = 25A I F = 50A IF = 100A di(rec)M/dt - (A/µs) 2000 Q rr - (nC) I F = 50A I F = 25A 1000 0 100 di f/dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt I F = 100A 1000 A 100 100 1000 di f /dt - (A/µs) Fig. 8 - Typical di(rec)M/dt vs. dif/dt HFA50HF20 3 t rr IF R E VER SE R EC O VER Y C IR C U IT tb ta 0 V R = 20 0 V I RRM 0 .5 I R R M 5 0.75 I R R M L = 70µH D .U.T. D G 4 di(r ec) M/dt 0 .0 1 Ω d if /d t A DJU S T Q rr 2 IR F P 2 5 0 S Fig. 9 - Reverse Recovery Parameter Test Circuit 1 d i f /dt 1. dif /dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/97