JFW HS8N60

HS8N60
N-CHANNEL POWER MOSFET
D
DESCRIPTION
G
This MOSFET is produced with advanced VDMOS technology of This technology
enable power MOSFET to have better characteristics , such as fast switching time , low on
resistance, low gate charge and especially excellent avalanche characteristics . This power
MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical
application is TV and monitor.
S
SCHEMATIC SYMBOL
FEATURES
• High ruggedness
• R DS(ON) (Max. 1.3 Ω)@V GS=10V
• Gate Charge (Typ.38nC)
• Improved dv/dt Capability
• 100% Avalanche Tested
GD
S
TO-220AB
GD
S
TO-220F
PACKAGE
TO-220AB
TO-220F
600
7.5
4.1
5.1
30
±30
230
14.7
4.5
147
53
1.18
0.43
300
05081.R11 2/11
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1
TO-220AB
TO-220F
0.85
2.35
62.5
62.5
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lizhenhui MB:+86-13537087568 E-mail:[email protected]
PP0640SAHS8N60
- PP3500SC
V GS =0V,I D =250uA
600
V DS =600V,V GS =0V
V DS =480V,T C =125 C
20
V DS =30V,V GS =0V
V DS =-30V,V GS =0V
V DS =V GS ,I D =250uA
V GS =10V,I D =3.75A
V GS =0V,V DS =25V,f=1MHz
V DS =300V,I D =7.5A,R G =25ohm
(note 4,5)
V DS =480V,V GS =10V,I D =7.5A
(note 4,5)
2.0
4.0
1.0
1.3
965
1255
105
135
12
16
16.5
45
60.5
130
81
170
64.5
140
28
36
4.5
12
Integral reverse p-n Junction
diode in the MOSFET
7.5
I S =7.5A, V GS =0V
1.5
I S =7.5A, V GS =0V
dI F /d t =100A/us
30
365
3.4
uC
Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 20mH, I AS = 7.5A, V DD = 50V, R G =50Ω, Starting T J = 25 C
3. I SD≤ 7.5A, di/dt = 200A/us, V DD≤ BV DSS , Staring T J =25 C
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
05081.R11 2/11
Page 1
2
www.protekdevices.com
lizhenhui MB:+86-13537087568 E-mail:[email protected]
PP0640SA
- PP3500SC
HS8N60
05081.R11 2/11
Page 1
3
www.protekdevices.com
lizhenhui MB:+86-13537087568 E-mail:[email protected]
PP0640SAHS8N60
- PP3500SC
PACKAGE DIMENSIONS
TO-220AB
Symbol
A
Millimeters
Max.
Min.
Max.
3.56
4.83
0.140
0.190
A1
2.03
2.92
0.080
0.115
b
0.38
1.02
0.015
0.040
b1
1.14
1.78
0.045
0.070
C
0.51
1.40
0.020
0.055
C1
0.36
0.61
0.014
0.024
D
9.65
10.67
0.380
0.420
E
14.22
16.51
0.560
0.650
e
05081.R11 2/11
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4
Inches
Min.
2.54BSC
0.10BSC
F
2.54
3.05
0.100
G
3.53
3.90
0.139
0.120
0.154
H
12.70
14.73
0.500
0.580
L
5.84
6.86
0.230
0.270
L1
-
6.35
-
0.250
www.protekdevices.com
lizhenhui MB:+86-13537087568 E-mail:[email protected]
HS8N60
PP0640SA - PP3500SC
TO-220F
Symbol
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
A1
2.60
2.80
0.102
0.110
A2
2.45
2.55
0.096
0.100
b
0.50
0.75
0.020
0.030
b1
1.10
1.40
0.043
0.055
C
0.50
0.70
0.020
0.028
D
9.70
10.30
0.382
0.406
E
14.70
15.30
0.579
0.602
5
2.54TYP
0.10TYP
e1
4.88
5.28
0.192
0.208
H
27.40
28.60
1.079
1.126
L
2.50
3.00
0.098
0.118
L1
6.70
6.90
0.264
0.272
L2
Page 1
Inches
A
e
05081.R11 2/11
Millimeters
3.60
3.80
0.142
0.150
www.protekdevices.com
lizhenhui MB:+86-13537087568 E-mail:[email protected]