SEMICONDUCTOR KF5N40D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and switching mode power supplies. A C K DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 0.1 MAX O L D B FEATURES ・VDSS(Min.)= 400V, ID= 4.2A H J ・Drain-Source ON Resistance : RDS(ON)=1.6 Ω(max) @VGS =10V E N G ・Qg(typ.) =5.5 nC F F M MAXIMUM RATING (Tc=25℃) 1 SYMBOL RATING UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V TC=25℃ 2.8 DPAK (1) IDP A KF5N40I 10* A EAS 70 mJ EAR 2.7 mJ dv/dt 4.5 V/ns 50 W P N 0.4 Derate above25℃ Storage Temperature Range J M PD Maximum Junction Temperature H C D Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation 4.2 ID @TC=100℃ Pulsed (Note1) O B Drain Current 1. GATE 2. DRAIN 3. SOURCE K @TC=25℃ 3 W/℃ Tj 150 ℃ Tstg -55～150 ℃ E CHARACTERISTIC 2 G F L F Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 2.5 ℃/W Thermal Resistance, Junction-toAmbient RthJA 110 ℃/W 1 2 3 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A B _ 0.2 6.6 + _ 0.2 6.1 + C _ 0.3 5.34 + D _ 0.2 0.7 + E _ 0.3 9.3 + F _ 0.2 2.3 + G _ 0.1 0.76 + H _ 0.1 2.3 + J _ 0.1 0.5 + K _ 0.2 1.8 + L _ 0.1 0.5 + M N _ 0.1 1.0 + 0.96 MAX P _ 0.3 1.02 + * : Drain current limited by maximum junction temperature. IPAK(1) PIN CONNECTION D G S 2012. 12. 04 Revision No : 0 1/6 KF5N40D/I ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 400 - - V ID= 250μA, Referenced to 25℃ - 0.4 - V/℃ Static BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient ID= 250μA, VGS=0V Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=2.1A - 1.3 1.6 Ω - 5.4 - - 1.5 - - 2.5 - - 20 - - 20 - - 25 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time VDS=320V, ID=5A VGS=10V VDD=200V, ID=5A RG=25Ω td(off) Turn-off Delay time (Note4,5) (Note4,5) VGS=10V ns Turn-off Fall time tf - 15 - Input Capacitance Ciss - 310 - Output Capacitance Coss - 50 - Reverse Transfer Capacitance Crss - 5 - - - 4.2 - - 16.8 VDS=25V, VGS=0V, f=1.0MHz nC pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD IS=4.2A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=5A, VGS=0V, - 260 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 1.1 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 4.9 mH, IS=5A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking KF5N40 D 001 2013. 2. 04 1 2 1 KF5N40 I 001 2 1 PRODUCT NAME 2 LOT NO Revision No : 0 2/6 KF5N40D/I 2.5A 2013. 2. 04 Revision No : 0 3/6 KF5N40D/I 3 6 5 4 3 101 100 10-1 10-2 10-5 2013. 2. 04 10-4 Revision No : 0 10-3 10-2 10-1 100 101 4/6 KF5N40D/I 2013. 2. 04 Revision No : 0 5/6 KF5N40D/I 2013. 2. 04 Revision No : 0 6/6