1SS176 SILICON EPITAXIAL PLANAR DIODE Switching diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 30 V Peak Reverse Voltage VRM 35 V Average Rectified Output Current IO 100 mA Forward Voltage IF 300 mA IFSM 1 A Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 175 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 30 V IR 0.5 µA Ctot 3 pF trr 4 ns Surge Forward Current at t = 1s C C Characteristics at Ta = 25 OC Parameter Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time from IF = 100 mA, VR = 6 V, RL = 100 Ω SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007