1SS376 Diodes Switching diode 1SS376 !Applications High voltage switching 1.7±0.1 !Features 1) Small surface mounting type. (UMD2) 2) VRM=300V guaranteed. 3) High reliability. 0.1±0.05 CATHODE MARK 2.5±0.2 0.3±0.05 !Construction Silicon epitaxial planar 0.7 +0.2 −0.1 1.25±0.1 Model identification label ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 !External dimensions (Units : mm) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 300 V DC reverse voltage VR 250 V Peak forward current IFM 300 mA Mean rectifying current IO 100 mA Isurge 2 A Surge current (10ms) Junction temperature Tj 125 °C Storage temperature Tstg −55~+125 °C !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit VF − − 1.2 V IF=100mA Reverse current IR − − 0.2 µA VR=250V Reverse current IR − − 100 µA VR=300V Capacitance between terminals CT − − 3 pF VR=0V, f=1MHz Reverse recovery time trr − − 100 ns IR=30mA, IF=30mA, Irr=3mA Forward voltage Conditons 1SS376 Diodes REVERSE CURRENT : IR (A) 100m 75 °C 1m 10µ 125°C 1µ 75°C 100n −25°C 125 °C 10m 25°C FORWARD CURRENT : IF (A) 100µ 25°C 10n 200µ 0 0.5 2n 1.0 0 50 Fig.1 Forward characteristics 20 0 20 40 60 FORWARD CURRENT : IF Fig.4 Reverse recovery time characteristics 200 250 300 1.1 1.0 0 10 20 30 REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics Ta=25°C NON REPETITIVE FORWARD SURGE CURRENT IF (A) 100 PULSE WIDTH 10 Io CURRENT (%) FORWARD SURGE CURRENT : IF Surge (A) REVERSE RECOVERY TIME : trr (ns) 40 150 1.2 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) 60 100 CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta = 25°C) 5 80 60 40 20 P=50% 0 0.2 1 10 100 1000 PULSE WIDTH : TIME (ms) Fig.5 Surge current characteristics 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig.6 Derating curve (mounting on glass epoxy PCBs)