The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF, TCAS and Mode-S applications. MODE Class AB η FREQUENCY VDD IDQ Power GAIN (MHz) (V) (mA) (W) (dB) (%) (dB) IRL 1400 50 100 120 20 45 -8 VSWR 20:1 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 50µs and pulse period = 1ms. DESCRIPTION The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV1011-300 Demo Kit Part Number: HVV1011-300-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08 1 innovative Semiconductor Company! HVV1011-300 HighThe Voltage, High Ruggedness HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Power 1030/1090 MHz, Pulsed 50µs Pulse, 5%Transistor Duty 1030/1090 50µs Pulse,Applications 5% Duty L-Band Avionics Pulsed Power Transistor For TCAS, MHz, IFF and Mode-S For TCAS, IFF and Mode-S Applications 1030/1090 MHz, 50µs Pulse, 5% Duty TM For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! The innovative Semiconductor Company! ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Symbol VSymbol BR(DSS) V IVDSS BR(DSS) BR(DSS) IDSS DSS IGSS 1 IGGSS P 11 GSS I G IRL P GDP111 IRL η 1 1 2 IRL η VGS(Q) D 2 ηD1 VGS(Q) VTH VGS(Q)2 VTH VTH Parameter Conditions Parameter Parameter Drain-Source Breakdown Conditions Conditions VGS=0V,ID=5mA Drain-Source Breakdown Drain LeakageBreakdown Current Drain-Source Drain Leakage Current Current Gate Leakage Drain Leakage Current Gate PowerLeakage Gain Current Gate Current Power Gain Loss InputLeakage Return Power Gain Input Loss Drain Return Efficiency Input Loss Drain Efficiency Gate Return Quiescent Voltage Drain Efficiency Gate Quiescent Voltage Threshold Voltage Gate Quiescent Voltage Threshold Voltage Threshold Voltage Min VGS=0V,ID=5mA VGS=0V,VDS=50V VGS=0V,ID=5mA VGS=0V,VDS=50V VGS=5V,VDS=0V VGS=0V,VDS=50V VGS=5V,VDS=0V F=1090MHz VGS=5V,VDS=0V F=1090MHz F=1090MHz F=1090MHz F=1090MHz F=1090MHz VDD=50V,IDQ=100mA F=1090MHz VDD=50V,IDQ=100mA VDD=5V, ID=300µA VDD=50V,IDQ=100mA VDD=5V, ID=300µA VDD=5V, ID=300µA 95 16 43 1.1 0.7 Min Typical Typical Max Min Typical 95 102 95 102 - 102 50 50 1 200 50 1 16 18 16 18 5 - 1 -12 18 -12 48 50.5 -12 48 50.5 1.1 1.45-8 1.1 1.45 0.745 1.2 1.45 0.7 1.21.8 1.2 1.7 Max Unit Unit Max Unit V - V V 200 µA 200 5 µA µA 5µA dB - µA dB -8 -8 - dB dB % 1.8 dB % V 1.8 V 1.7 % 1.7 V V V PULSE CHARACTERISTICS PULSE CHARACTERISTICS Pulse CHARACTERISTICS Symbol Parameter Symbol Parameter Symbol Parameter tr1 Rise Time 1 Rise Time tTrf1r Rise Time Fall Time 111 Fall Time Fall Time tPD Pulse Droop Tf f 1 PD Pulse Droop PD1 Pulse Droop Conditions Conditions Conditions F=1090MHz F=1090MHz F=1090MHz F=1090MHz F=1090MHz F=1090MHz F=1090MHz THERMAL PERFORMANCE THERMAL PERFORMANCE Thermal PERFORMANCE Symbol Symbol θJC1 θJC1 Parameter Parameter Thermal Resistance Thermal Resistance Max Max 0.20 0.20 Typical MinMin Typical Max Min - - - - Typical <35 <35 <35 <15 50 <15 <15 0.3 50 0.3 0.3 0.5 Max Units Unit Max Units 50 nS nS nS 50 nS nS 50 0.5 dB 0.5 dB dB Unit Unit °C/W °C/W RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE Symbol LMT1 Symbol LMT1 Parameter Load Parameter Mismatch Load Tolerance Mismatch Tolerance Test Condition F = 1090 MHz Test Condition F = 1090 MHz Max 20:1 Max 20:1 Units VSWR Units VSWR The HVV1011-300 device is capable of withstanding an output load mismatch The HVV1011-300 device isdevice capable of an output load mismatch corresponding to amismatch 20:1 VSWR The HVV1011-300 iswithstanding capable withstanding outputoperating load corresponding to a 20:1 VSWR at rated of output power andan nominal voltage corresponding to a 20:1 VSWR at rated output power and nominal operating voltage at rated output power and nominal operating voltage across the frequency band of operation. across the frequency band of operation. across the frequency band of operation. NOTE: : All parameters measured under pulsed conditions at 275W output power measured at the 10% 1.) NOTE: All parameters measured under conditions 275W power point of the pulse with pulse width = 50µsec, dutypulsed cycle = 5% and VDD =at50V, IDQoutput = 100mA in a broad1.) NOTE: All parameters measured under pulsed conditions at 275W output power measured at the 10% point of the pulse with pulse width = 50µsec, duty cycle = 5% band matched test fixture. measured at the 10% point of the pulse with pulse width = 50µsec, duty cycle = 5% 2 and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. NOTE: Amount of gate required to attain nominal quiescent and VDD = 50V, IDQvoltage = 100mA in a broadband matched test current. fixture. 1 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. HVViSemiconductors, Semiconductors, HVVi Inc.Inc. st 10235 S. 51st St. Suite 100 HVVi Inc. 10235 Semiconductors, S. 51 St. Suite 100 st 85044 Phoenix, AZ. Suite 100 10235 S. 51 Phoenix, Az. St. 85044 Phoenix, Az. 85044 ISO 9001:2000 Certified ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or Certified visit www.hvvi.com ISO 9001:2000 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All All Rights Reserved. (866) 429-HVVi (4884) or Inc. visit www.hvvi.com ©Tel: 2008 HVVi Semiconductors, Rights Reserved. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A EG-01-DS02A 12/11/08 EG-01-DS02A 12/12/08 22 12/12/08 2 The innovative Semiconductor Company! HVV1011-300 High Voltage,HVV1011-300 High Ruggedness High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications For TCAS, IFF and Mode-S Applications TM Zo = 10 Ω ZIN* The innovative Semiconductor Company! 1030MHz ZOUT* 1030MHz HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000Inc. Certified © 2008 HVVi Semiconductors, All Rights Reserved. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/12/08 EG-01-DS02A 3 12/11/08 3 HVV1011-300 High Voltage, High Ruggedness HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 1030/1090 1030/1090 MHz, 50µs Pulse, 5% DutyMHz, 50µs Pulse, 5% Duty ForApplications TCAS, IFF and Mode-S Applications For TCAS, IFF and Mode-S TM The innovative Semiconductor Company! The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs 5% Duty The Pulse, innovative Semiconductor Company! For TCAS, IFF and Mode-S Applications Demonstration Board Outline Demonstration Circuit Demonstration Board Outline Demonstration Circuit Board PictureBoard Picture Demonstration Board Outline Demonstration Circuit Board Picture Files for DemonstrationBoard Board available online at www.hvvi.com/products) (AutoCAD(AutoCAD Files for Demonstration available online at www.hvvi.com/products) (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV1011-300 Demonstration Circuit Board Bill of Materials HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/12/08 4 HVV1011-300 Demonstration Circuit Board Bill of Materials HVV1011-300 Demonstration Circuit Board Bill of Materials HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com EG-01-DS02A 12/11/08 4 EG-01-DS02A 12/12/08 The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty 1030/1090 MHz, 50µs Pulse, For 5%TCAS, DutyIFF and Mode-S Applications For TCAS, IFF and Mode-S Applications TM PACKAGE DIMENSIONS PACKAGE DIMENSIONS DRAIN The innovative Semiconductor Company! GATE SOURCE Note: Drawing is not actual size. Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectualInc. property including patent rights. The HVVi name andinlogo HVVi Semiconductors, (HVVi)rights, reserves the right any to make changes to information published this are document at any without notice. Inc. This document supersedes and replaces all information trademarks of time HVViand Semiconductors, supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 Inc. HVVi Semiconductors, 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, All Rights Reserved. ISO 9001:2000 Inc. Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08 EG-01-DS02A5 12/12/08 5