IRF IRF7328

PD -94000
IRF7328
HEXFET® Power MOSFET
●
●
●
●
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Available in Tape & Reel
VDSS
-30V
RDS(on) max
ID
21mΩ@VGS = -10V
-8.0A
32mΩ@VGS = -4.5V
-6.8A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S1
G1
S2
G2
1
8
D1
2
7
D1
3
6
4
5
D2
D2
SO-8
T o p V ie w
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-8.0
-6.4
-32
2.0
1.3
16
± 20
-55 to + 150
V
W
W
mW/°C
V
°C
Max.
Units
62.5
°C/W
A
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient ƒ
1
10/04/00
IRF7328
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.018
17
26.8
–––
–––
–––
–––
–––
–––
52
9.8
8.3
13
15
198
98
2675
409
262
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
21
VGS = -10V, ID = -8.0A ‚
mΩ
32
VGS = -4.5V, ID = -6.8A ‚
-2.5
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -8.0A
-15
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
78
ID = -8.0A
–––
nC
VDS = -15V
–––
VGS = -10V
20
VDD = -15V, VGS = -10.0V
23
ID = -1.0A
ns
297
RG = 6.0Ω
147
RD = 15Ω ‚
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-32
–––
–––
–––
–––
37
36
-1.2
56
54
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V ‚
TJ = 25°C, I F = -2.0A
di/dt = -100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7328
100
VGS
-10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
100
VGS
-10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
10
1
-2.7V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
10
-2.7V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 150 ° C
TJ = 25 ° C
1
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
100
0.1
2.0
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
1
6.0
ID = -8.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7328
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
Ciss
2000
1000
Coss
Crss
14
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
4000
10
V DS =-24V
V DS =-15V
12
10
8
6
4
2
0
1
ID = -8A
0
100
0
10
-VDS , Drain-to-Source Voltage (V)
40
50
60
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
100
TJ = 25 ° C
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
20
QG , Total Gate Charge (nC)
1.6
1
0.1
10ms
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7328
10.0
VDS
VGS
-ID , Drain Current (A)
8.0
RD
D.U.T.
RG
+
VDD
6.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
PDM
0.05
0.02
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.060
RDS ( on ) , Drain-to-Source On Resistance (Ω )
(
RDS(on), Drain-to -Source On Resistance Ω)
IRF7328
0.050
0.040
ID = -8.0A
0.030
0.020
0.010
0.000
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.100
0.075
0.050
VGS = -4.5V
VGS = -10V
0.025
0.000
0
10
20
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
30
40
50
60
70
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
D.U.T.
QGS
+VDS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7328
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0.2 5 (.0 10 )
4
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
Part Marking
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7
IRF7328
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 3 0 .0 0
(1 2 .9 9 2 )
MAX.
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
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Data and specifications subject to change without notice. 10/00
8
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