IRFP244, IRFP245, IRFP246, IRFP247 Semiconductor 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 15A and 14A, 275V and 250V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • 275V, 250VDC Rated, 120VAC Line System Operation Formerly developmental type TA17423. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol • rDS(ON) = 0.28Ω and 0.34Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Ordering Information PART NUMBER PACKAGE D BRAND IRFP244 TO-247 IRFP244 IRFP245 TO-247 IRFP245 IRFP246 TO-247 IRFP246 IRFP247 TO-247 IRFP247 G S NOTE: When ordering, include the entire part number. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 2211.2 IRFP244, IRFP245, IRFP246, IRFP247 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . .VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . Tpkg IRFP244 250 250 15 9.7 60 ±20 150 1.2 550 -55 to 150 IRFP245 250 250 14 8.8 56 ±20 150 1.2 550 -55 to 150 IRFP246 275 275 15 9.7 60 ±20 150 1.2 550 -55 to 150 IRFP247 275 275 14 8.8 56 ±20 150 1.2 550 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRFP244, IRFP245 250 - - V IRFP246, IRFP247 275 - - V 2.0 - 4.0 V VDS = Rated BVDSS , VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS , VGS = 0V TJ = 125oC - - 250 µA 15 - - A 14 - - A - - ±100 nA IRFP244, IRFP246 - 0.20 0.28 Ω IRFP245, IRFP247 - 0.24 0.34 Ω 6.7 11 - S - 16 24 ns - 67 100 ns - 53 80 ns - 49 74 ns - 39 59 nC - 6.6 - nC - 20 - nC Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) SYMBOL BVDSS VGS(TH) IDSS ID(ON) IRFP244, IRFP246 TEST CONDITIONS VGS = 0V, ID = 250µA (Figure 10) VGS = VDS , ID = 250µA VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) IRFP245, IRFP247 Gate to Source Leakage Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) IGSS rDS(ON) gfs td(ON) tr td(OFF) VGS = ±20V VGS = 10V, ID = 10A (Figures 8, 9) VDS ≥ 50V, ID = 10A (Figure 12) VDD = 125V, ID ≈ 15A, RG = 9.1Ω, VGS = 10V, RL = 8Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = 10V, ID = 15A, VDS = 0.8 x Rated BVDSS , IG(REF) = 1.5mA (Figures 14, 19, 20) Gate charge is Essentially Independent of Operating Temperature 5-2 IRFP244, IRFP245, IRFP246, IRFP247 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS TYP MAX UNITS - 1300 - pF Input Capacitance CISS Output Capacitance COSS - 320 - pF Reverse Transfer Capacitance CRSS - 69 - pF - 5.0 - nH - 12.5 - nH - - 0.83 oC/W - - 30 oC/W Internal Drain Inductance Internal Source Inductance LD LS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) MIN Measured fRom the Drain Lead, 6mm (0.25in) From Package to the Center of Die Measured from The Source Lead, 6mm (0.25in) from the Header to the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S Junction to Case RθJC Junction to Ambient RθJA Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN TYP MAX UNITS - - 15 A - - 60 A - - 1.8 V G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge VSD TJ = 25oC, ISD = 15A, VGS = 0V (Figure 13) trr TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 150 300 640 ns QRR TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.0µH, RG = 25Ω, peak IAS = 15A. See Figures 15, 16. 5-3 IRFP244, IRFP245, IRFP246, IRFP247 Typical Performance Curves Unless Otherwise Specified 15 1.0 ID , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 12 IRFP244, IRFP246 9 IRFP245, IRFP247 6 3 0.2 0 0 0 50 100 25 150 50 TC , CASE TEMPERATURE (oC) 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC , NORMALIZED THERMAL IMPEDANCE 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 t2 10-2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 10-3 10-5 10-4 10-3 10-2 0.1 1 10 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 25 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 102 IRFP244/246 10µs IRFP245/247 IRFP244/246 10 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 103 100µs IRFP245/247 1ms 10ms 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 IRFP244, IRFP245 DC IRFP246, IRFP247 102 10 VDS , DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs VGS = 10V 20 VGS = 6.0V 15 VGS = 5.5V 10 VGS = 5.0V 5 VGS = 4.5V VGS = 4.0V 0 103 0 25 50 75 100 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 125 IRFP244, IRFP245, IRFP246, IRFP247 Typical Performance Curves Unless Otherwise Specified IDS(ON) , DRAIN TO SOURCE CURRENT (A) 25 ID , DRAIN CURRENT (A) PULSE DURATION = 80µs VGS = 10V 20 VGS = 6.0V 15 VGS = 5.5V 10 VGS = 5.0V 5 VGS = 4.5V VGS = 4.0V 0 0 2 4 6 8 (Continued) 100 VDS ≥ 50V PULSE DURATION = 80µs 10 1 0.1 10 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs VGS = 10V 1.5 1.0 VGS = 20V 0.5 0 0 15 30 60 45 ID = 10A VGS = 10V 2.4 1.8 1.2 0.6 0 -60 75 -40 -20 0 20 60 40 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) ID , DRAIN CURRENT (A) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 3000 1.25 VGS = 0V, f = 1MHz CISS = CGS + CGD ID = 250µA 1.05 0.95 0.85 0.75 -60 CRSS = CGD COSS ≈ CDS + CGD 2400 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 10 FIGURE 7. TRANSFER CHARACTERISTICS 2.0 ON RESISTANCE (Ω) rDS(ON), DRAIN TO SOURCE 2.5 TJ = 25oC TJ = 150oC 1800 CISS 1200 COSS 600 -40 -20 0 20 40 60 80 0 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) CRSS 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRFP244, IRFP245, IRFP246, IRFP247 Typical Performance Curves 12 ISD , SOURCE TO DRAIN CURRENT (A) VDS ≥ 50V PULSE DURATION = 80µs TJ = 25oC 9 TJ = 150oC 6 3 (Continued) 100 10 TJ = 25oC TJ = 150oC 1 0.1 0 0 5 10 15 20 25 0 0.4 ID , DRAIN CURRENT (A) 0.8 1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 ID = 15A 16 VDS = 50V 12 VDS = 125V VDS = 200V 8 4 0 0 1.2 VSD , SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS , GATE TO SOURCE VOLTAGE (V) gfs , TRANSCONDUCTANCE (S) 15 Unless Otherwise Specified 12 24 36 48 60 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 2.0 IRFP244, IRFP245, IRFP246, IRFP247 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr VDS RL 90% + RG - 10% 0 VDD 10% 90% DUT VGS 0 VGS 50% 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 90% VDD Qg(TOT) 12V BATTERY 0.2µF SAME TYPE AS DUT 50kΩ Qgd Qgs 0.3µF D Ig(REF) VDS 0 DUT G S 0 IG CURRENT SAMPLING RESISTOR VGS IG(REF) VDS ID CURRENT SAMPLING RESISTOR 0 FIGURE 20. GATE CHARGE WAVEFORMS FIGURE 19. GATE CHARGE TEST CIRCUIT 5-7