INTERSIL IRFF9130

IRFF9130
Data Sheet
February 1999
-6.5A, -100V, 0.300 Ohm, P-Channel Power
MOSFET
File Number
2216.3
Features
• -6.5A, -100V
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
Formerly developmental type TA17511.
D
Ordering Information
PART NUMBER
IRFF9130
PACKAGE
TO-205AF
G
BRAND
IRFF9130
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
4-101
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFF9130
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
IRFF9130
-100
-100
-6.5
-26
±20
25
0.2
500
-55 to 150
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA, (Figure 10)
-100
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250µA
-2.0
-
-4.0
V
VDS = Rated BVDSS, VGS = 0V
-
-
-25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
-
-250
µA
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
IDSS
ID(ON)
IGSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
rDS(ON)
gfs
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
-6.5
-
-
A
VGS = ±20V
-
-
±100
nA
VGS = -10V, ID = -3A, (Figures 8, 9)
-
0.25
0.300
Ω
2.5
3.5
-
S
VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A, RG = 9.1Ω,
RL = 7.4Ω for BVDSS = -100V
RL =5.8Ω for BVDSS = -80V
(Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature
-
30
60
ns
-
70
140
ns
-
70
140
ns
-
70
140
ns
VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS,
IG(REF) = -1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
25
45
nC
-
13
-
nC
-
12
-
nC
-
500
-
pF
VDS ≥ ID(ON) x rDS(ON)MAX, ID = -3A,
(Figure 12)
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
-
300
-
pF
Reverse-Transfer Capacitance
CRSS
-
100
-
pF
-
5.0
-
nH
-
15
-
nH
-
-
5.0
oC/W
-
-
175
oC/W
VGS = 0V, VDS = -25V, f = 1.0MHz, (Figure 11)
Internal Drain Inductance
LD
Measured From the
Drain Lead, 5mm (0.2in)
From Package to Center
of Die
Internal Source Inductance
LS
Measured From The
Source Lead, 5mm
(0.2in) From Header to
Source Bonding Pad
Modified MOSFET Symbol Showing the Internal
Devices
Inductances
D
LD
G
LS
S
Junction to Case
RθJC
Junction to Ambient
RθJA
4-102
Typical Socket Mount
IRFF9130
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the Integral Reverse
P-N Junction Diode
D
MIN
TYP
MAX
UNITS
-
-
-6.5
A
-
-
-26
A
-
-
-1.5
V
-
300
-
ns
-
1.8
-
µC
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
VSD
trr
Reverse Recovered Charge
QRR
TC = 25oC, ISD = 6.5A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 6.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 6.5A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 17.75mH, RG = 25Ω, peak IAS = 6.5A. (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
-7.0
ID, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
-5.6
-4.2
-2.8
-1.4
0
0
0
25
50
75
100
TC , CASE TEMPERATURE (oC)
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
150
25
50
75
100
125
TC, CASE TEMPERATURE (oC)
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
ZθJC, NORMALIZED
THERMAL IMPEDANCE
POWER DISSIPATION MULTIPLIER
1.2
0.2
0.1
PDM
0.1
0.05
t1
t2
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
SINGLE PULSE
0.01
10-5
10-4
10-1
10-3
10-2
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-103
1
10
IRFF9130
Typical Performance Curves
Unless Otherwise Specified (Continued)
102
-20
OPERATION IN THIS REGION
IS LIMITED BY rDS(ON)
VGS = -9V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10µs
100µs
10
1ms
10ms
1
TC = 25oC
TJ = MAX RATED
RJC = 5.0oC/W
SINGLE PULSE
0.1
1
100ms
VGS = -10V
-16
PULSE DURATION = 80µs
-12
VGS = -7V
-8
VGS = -6V
-4
VGS = -5V
DC
VGS = -4V
0
0
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
-10
ID, DRAIN CURRENT (A)
ID(ON), ON-STATE DRAIN CURRENT (A)
-20
VGS = -7V
VGS = -9V
-8
VGS = -8V
VGS = -6V
-6
PULSE DURATION = 80µs
-4
VGS = -5V
-2
VGS = -4V
TJ = -55oC
-8
-4
-5
0
FIGURE 6. SATURATION CHARACTERISTICS
2.2
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE VOLTAGE
PULSE DURATION = 2µs
0.8
0.6
0.4
VGS = -20V
0.2
0
-10
-20
-30
ID, DRAIN CURRENT (A)
-40
-50
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-104
-2
-4
-6
-8
VGS, GATE TO SOURCE VOLTAGE (V)
-10
FIGURE 7. TRANSFER CHARACTERISTICS
1.0
0
-50
TJ = 125oC
TJ = 25oC
-12
0
-1
-2
-3
-4
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -10V
-40
VDS > ID(ON) x rDS(ON) MAX
PULSE DURATION = 80µs
-16
0
0
-30
FIGURE 5. OUTPUT CHARACTERISTICS
-10
VGS = -10V
-20
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE
VGS = -8V
VGS = -10V
ID = -3A
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
160
IRFF9130
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
1000
1.15
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
800
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
ID = 250µA
1.05
0.95
600
CISS
COSS
400
0.85
200
0.75
-40
0
40
120
80
0
160
CRSS
0
-10
-20
-30
-40
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-100
TJ = -55oC
ISD, SOURCE TO DRAIN CURRENT (A)
TJ = 25oC
4
TJ = 125oC
3
2
1
0
PULSE DURATION = 80µs
0
-4
-8
-12
ID, DRAIN CURRENT (A)
-16
-10
TJ = 150oC
TJ = 25oC
-1
-0.1
-0.4
-20
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
VGS, GATE TO SOURCE VOLTAGE (V)
gfs, TRANSCONDUCTANCE (S)
5
-50
ID = -6.5A
-5
-10
VDS = -80V
VDS = -50V
-15
VDS = -20V
-20
-25
0
8
16
24
32
40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-105
-1.8
IRFF9130
Test Circuits and Waveforms
VDS
tAV
L
0
VARY tP TO OBTAIN
-
RG
REQUIRED PEAK IAS
+
VDD
DUT
0V
VDD
tP
VGS
IAS
IAS
VDS
tP
0.01Ω
BVDSS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(OFF)
td(ON)
tr
0
RL
-
DUT
VGS
+
10%
10%
VDS
VDD
RG
tf
VGS
0
90%
90%
10%
50%
50%
PULSE WIDTH
90%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
-VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
0
VDS
DUT
12V
BATTERY
0.2µF
50kΩ
0.3µF
Qgs
Qg(TOT)
DUT
G
VGS
Qgd
D
VDD
0
S
IG(REF)
IG CURRENT
SAMPLING
RESISTOR
+VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
4-106
0
IG(REF)
FIGURE 20. GATE CHARGE WAVEFORMS
IRFF9130
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