IRF IRG7PH46UDPBF

PD - 97498
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM 
Positive VCE (ON) temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-Free
IRG7PH46UDPbF
IRG7PH46UD-EP
C
VCES = 1200V
I NOMINAL = 40A
TJ(max) = 150°C
G
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
C
Applications
•
•
•
•
VCE(on) typ. = 1.7V
E
C
GC
U.P.S.
Welding
Solar Inverter
Induction Heating
E
E
GC
TO-247AD
IRG7PH46UD-EP
TO-247AC
IRG7PH46UDPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Max.
Units
VCES
Collector-to-Emitter Voltage
Parameter
1200
V
IC @ TC = 25°C
Continuous Collector Current (Silicon Limited)
108
IC @ TC = 100°C
Continuous Collector Current (Silicon Limited)
57
INOMINAL
ICM
Nominal Current
Pulse Collector Current, VGE = 15V
120
ILM
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
Diode Maximum Forward Current
VGE
Continuous Gate-to-Emitter Voltage
±30
V
PD @ TC = 25°C
Maximum Power Dissipation
390
W
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
40
c
A
160
108
57
d
160
156
-55 to +150
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
–––
–––
0.32
RθJC (Diode)
f
Thermal Resistance Junction-to-Case-(each Diode) f
–––
–––
0.66
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
40
–––
RθJC (IGBT)
1
Thermal Resistance Junction-to-Case-(each IGBT)
Units
°C/W
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04/26/2010
IRG7PH46UDPbF/IRG7PH46UD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Parameter
1200
—
Max. Units
—
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
—
1.2
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.7
2.0
—
2.0
—
V
Conditions
VGE = 0V, IC = 100µA
V
IC = 40A, VGE = 15V, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-13
—
gfe
ICES
Forward Transconductance
—
50
—
Collector-to-Emitter Leakage Current
—
1.5
100
µA
—
2.0
—
mA
—
3.1
4.8
V
IF = 40A
—
3.0
—
—
—
±200
nA
VGE = ±30V
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
e
V/°C VGE = 0V, IC = 1.0mA (25°C-150°C)
IC = 40A, VGE = 15V, TJ = 25°C
VCE = VGE, IC = 1.6mA
V
mV/°C VCE = VGE, IC = 1.6mA (25°C - 150°C)
VCE = 50V, IC = 40A, PW = 20µs
S
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IF = 40A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Total Gate Charge (turn-on)
Parameter
—
220
Max. Units
Qge
Gate-to-Emitter Charge (turn-on)
—
30
50
Qgc
Gate-to-Collector Charge (turn-on)
—
85
130
Eon
Turn-On Switching Loss
—
2610
3515
Eoff
Turn-Off Switching Loss
—
1845
2725
—
4455
6240
IC = 40A
320
Etotal
Total Switching Loss
td(on)
Turn-On delay time
—
45
60
tr
Rise time
—
40
60
td(off)
Turn-Off delay time
—
410
450
tf
Fall time
—
45
60
Eon
Turn-On Switching Loss
—
3790
—
Eoff
Turn-Off Switching Loss
—
2905
—
nC
d
Conditions
VGE = 15V
VCC = 600V
IC = 40A, VCC = 600V, VGE = 15V
µJ
RG = 10Ω, L = 200µH,TJ = 25°C
g
Energy losses include tail & diode reverse recovery
ns
IC = 40A, VCC = 600V, VGE=15V
µJ
RG=10Ω, L=200µH, TJ = 150°C
Etotal
Total Switching Loss
—
6695
—
td(on)
Turn-On delay time
—
40
—
tr
Rise time
—
40
—
td(off)
Turn-Off delay time
—
480
—
tf
Fall time
—
200
—
Cies
Input Capacitance
—
4820
—
Coes
Output Capacitance
—
150
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
110
—
f = 1.0Mhz
TJ = 150°C, IC = 160A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
g
Energy losses include tail & diode reverse recovery
ns
pF
VGE = 0V
VCC = 960V, Vp ”1200V
Rg = 10Ω, VGE = +20V to 0V
Erec
trr
Reverse Recovery Energy of the Diode
—
1130
—
µJ
TJ = 150°C
Diode Reverse Recovery Time
—
140
—
ns
Irr
Peak Reverse Recovery Current
—
40
—
A
VCC = 600V, IF = 40A
Rg = 10Ω, L =1.0mH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
… Values influenced by parasitic L and C of the test circuit.
2
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IRG7PH46UDPbF/IRG7PH46UD-EP
100
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Vcc = 600V
Gate drive as specified
Power Dissipation = 154W
Load Current ( A )
80
Square Wave:
60
VCC
40
I
Diode as specified
20
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
120
400
350
100
300
250
Ptot (W)
IC (A)
80
60
200
150
40
100
20
50
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T C (°C)
T C (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
1000
100
100
10
100µsec
DC
IC (A)
IC (A)
10µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
1
10
100
1000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
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10000
10
100
1000
10000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
3
IRG7PH46UDPbF/IRG7PH46UD-EP
160
160
140
140
120
120
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
60
40
ICE (A)
ICE (A)
100
VGE = 18V
VGE = 15V
80
VGE = 12V
VGE = 10V
60
VGE = 8.0V
40
20
20
0
0
0
2
4
6
8
10
0
2
4
VCE (V)
160
140
140
120
120
VGE = 18V
VGE = 15V
VGE = 12V
80
100
IF (A)
ICE (A)
10
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 30µs
160
100
VGE = 10V
VGE = 8.0V
60
-40°C
25°C
150°C
80
60
40
40
20
20
0
0
0
2
4
6
8
10
0.0
1.0
2.0
VCE (V)
3.0
4.0
5.0
6.0
VF (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 30µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 30µs
12
12
10
10
8
8
ICE = 20A
ICE = 40A
6
VCE (V)
VCE (V)
8
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
ICE = 80A
ICE = 20A
ICE = 40A
6
ICE = 80A
4
4
2
2
0
0
4
8
12
16
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
4
6
20
4
8
12
16
20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
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IRG7PH46UDPbF/IRG7PH46UD-EP
12
ICE, Collector-to-Emitter Current (A)
120
10
VCE (V)
8
ICE = 20A
ICE = 40A
6
ICE = 80A
4
2
100
80
T J = 25°C
T J = 150°C
60
40
20
0
0
4
8
12
16
4
20
5
6
7
8
9
VGE, Gate-to-Emitter Voltage (V)
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
9000
1000
tdOFF
8000
Swiching Time (ns)
7000
Energy (µJ)
6000
EON
5000
4000
3000
EOFF
2000
tF
100
tdON
1000
tR
0
10
0
10
20
30
40
50
60
70
80
0
10
20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
30
40
50
60
70
80
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
10000
9000
Energy (µJ)
Swiching Time (ns)
EOFF
8000
7000
6000
EON
5000
tdOFF
1000
tF
100
tR
tdON
4000
3000
2000
10
0
20
40
60
80
100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V
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0
20
40
60
80
100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V
5
IRG7PH46UDPbF/IRG7PH46UD-EP
40
50
35
RG = 5.0Ω
IRR (A)
IRR (A)
40
RG = 10Ω
30
30
25
RG = 47Ω
20
20
RG = 100Ω
15
10
10
20
30
40
50
60
70
0
80
20
IF (A)
40
60
80
100
RG (Ω)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 150°C
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
40
6000
35
5000
30
QRR (µC)
IRR (A)
80A
25
4000
40A
5.0Ω
3000
10Ω
47Ω
100Ω
2000
20
20A
1000
15
200
300
400
500
600
700
100 200 300 400 500 600 700 800 900 1000
800
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 40A; TJ = 150°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
1600
RG = 5.0 Ω
RG = 10 Ω
RG = 47Ω
RG = 100Ω
Energy (µJ)
1200
800
400
0
20
30
40
50
60
70
80
IF (A)
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 150°C
6
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IRG7PH46UDPbF/IRG7PH46UD-EP
10000
VGE, Gate-to-Emitter Voltage (V)
16
Capacitance (pF)
Cies
1000
Coes
100
Cres
14
VCES = 600V
VCES = 400V
12
10
8
6
4
2
10
0
0
100
200
300
400
500
600
0
40
VCE (V)
80
120
160
200
240
Q G, Total Gate Charge (nC)
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 40A; L = 2400H
Fig. 22 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τJ
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ
τ2
τ1
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
0.001
1E-005
0.000031
0.08573
0.001470
0.12712
0.002625
0.09903
0.012121
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
τi (sec)
0.01330
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
R4
R4
τ4
τ4
Ri (°C/W)
τi (sec)
0.007488
0.000016
0.235126
0.00057
0.280054
0.00409
0.136283
0.022342
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRG7PH46UDPbF/IRG7PH46UD-EP
L
L
DUT
0
80 V +
VCC
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
R=
VCC
ICM
L
-5V
VCC
DUT
DUT /
DRIVER
VCC
Rg
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
C force
100K
D1
22K
C sense
G force
DUT
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
8
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IRG7PH46UDPbF/IRG7PH46UD-EP
900
80
800
700
70
700
600
60
600
60
500
50
500
50
300
200
40
90% ICE
30
5%
VCE
100
5% ICE
0
-100
-0.5
0
0.5
10
100
1.5
70
40
90% test current
10% tes t
current
30
20
5% V CE
0
10
0
Eon Loss
-100
-2
2
80
TEST
CURRENT
300
200
-10
1
tr
400
20
0
Eoff Loss
90
-1
0
1
2
I CE (A)
V CE (V)
400
I CE (A)
tf
800
V CE (V)
90
900
3
4
-10
5
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
50
EREC
40
30
20
tRR
IF (A)
10
0
-10
-20
10%
Peak
IRR
Peak
IRR
-30
-40
-50
-0.20
0.00
0.20
0.40
0.60
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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IRG7PH46UDPbF/IRG7PH46UD-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
(;$03/( 7+,6,6$1,5)3(
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG7PH46UDPbF/IRG7PH46UD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(+
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3$57180%(5
,17(51$7,21$/
5(&7,),(5
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2010
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