ISAHAYA ISB1035AS1

〈SMALL-SIGNAL TRANSISTOR〉
ISB1035AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
ISB1035AS1 is a resin sealed silicon PNP epitaxial type
4.0
transistor. It is designed for low frequency power amplify
7.5MAX
Complementary with ISD1447AS1.
3.0
application.
FEATURE
0.1
●High collecot dissipation. Pc= 600mW
1.0
1.0
14.0
●High gain band width product. fT= 100MHz typ
13.0MIN
●High collector current. ICM= 1.5A
●Excellent linearity of DC forward current gain.
0.45
2.5
0.4
2.5
2.5
APPLICATION
Radio, tape recorder, small type stereo, etc.
①
③
②
Low frequency power amplify circuit with 2 to 3.5W output.
JEITA:
JEDEC:
TERMINAL CONNECTER
①:EMITTER
MAXIMUM RATINGS(Ta=25℃)
.
Symbol
②:COLLECTOR
Parameter
VCBO
VEBO
VCEO
IC
ICM
Pc
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
-30
-4
-25
-1
-1.5
600
+150
-55~+150
V
V
V
A
A
mW
℃
℃
③:BASE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Parameter
Limits
Test conditions
Min
Typ
Max
Unit
V(BR)CBO
C to B break down voltage
IC= -10μA , IE =0mA
-30
-
-
V
V(BR)EBO
E to B break down voltage
IE= -10μA , IC =0mA
-4
-
-
V
V(BR)CEO
C to E break down voltage
IC= -100μA , RBE= ∞
-25
-
-
V
ICBO
Collector cut off current
V
CB
IEBO
Emitter cut off current
V
EB= -2V , I C= 0mA
hFE※
DC forward current gain
V
CE
C to E Saturation Voltage
I C= -500mA , I B= -25mA
Gain band width product
V
VCE(sat)
fT
= -25V , I E= 0mA
= -1V , IC= -500mA
CE= -6V , I E= 10mA
※) It shows hFE classification in right table.
-
-
-1
μA
-
-
-1
μA
55
-
300
-
-
-
-0.5
V
-
100
-
MHz
Item
C
D
E
hFE item
55~110
90~180
150~300
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
ISB1035AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
800
600
400
Pc
=
0.
6W
COLLECTOR DISSIPATION Pc(mW)
1000
200
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(℃)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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mishap.
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Apr.2012