IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE(sat) typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C 1200 V ± 20 V 60 40 A A 50 VCES A 10 µs 300 W • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • TO-247 package - industry standard outline - epoxy meets UL 94V-0 Applications Symbol Conditions (TVJ Characteristic Values = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 40 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff Cies QGon 2.4 2.8 4.5 3.0 V V 6.5 V 0.4 mA mA 200 nA 0.4 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 40 A VGE = ±15 V; RG = 39 Ω 85 50 440 50 6.1 3.0 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 25 A 2 250 nF nC 0.42 K/W 321 RthJC • AC drives • DC drives and choppers • Uninteruptible power supplies (UPS) • switched-mode and resonant-mode power supplies • inductive heating, cookers © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXEH 40N120 IXEH 40N120D1 Diode [D1 version only] Equivalent Circuits for Simulation Conduction Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C 60 35 Symbol Conditions Characteristic Values min. typ. max. VF IF = 40 A; TVJ = 25°C TVJ = 125°C IRM t rr Erec(off) IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V Maximum Ratings 2.6 2.0 51 180 1.8 RthJC A A 3.0 V V A ns mJ Diode (typ. at TJ = 125°C) V0 = 1.26V; R0 = 15 mΩ Thermal Response 1.0 K/W Component Symbol IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 45 mΩ Conditions TVJ Tstg Md mounting torque Symbol Conditions RthCH with heatsink compound Maximum Ratings -55...+150 -55...+150 °C °C 0.8...1.2 Nm IGBT Cth1 = 0.007 J/K; Rth1 = 0.215 K/W Cth2 = 0.187 J/K; Rth2 = 0.205 K/W Diode Cth1 = 0.006 J/K; Rth1 = 0.649 K/W Cth2 = 0.113 J/K; Rth2 = 0.351 K/W TO-247 AD Outline Weight Characteristic Values min. typ. max. 0.25 K/W 6 g Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 321 Dim. © 2003 IXYS All rights reserved 2-4 IXEH 40N120 IXEH 40N120D1 120 VGE = 17 V A 120 A 100 15 V 100 IC 13 V 80 VGE = 17 V 15 V IC 80 60 13 V 60 11 V 11 V 40 40 9V 20 9V 20 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 3 4 6 V 7 5 0 1 2 3 4 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 90 A 75 120 VCE = 20 V A 100 IC 6 V 7 5 VCE IF 80 60 60 45 40 30 TVJ = 125°C TVJ = 25°C TVJ = 125°C 15 20 TVJ = 25°C 0 0 4 6 8 10 12 0 14 V 16 1 2 V 3 4 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 20 10 V K/W 15 ZthJC 1 VGE Typ. forward characteristics of free wheeling diode diode [D1 version only] IGBT 10 0.1 5 0.01 single pulse VCE = 600 V IC = 35 A 0 MUBW3512E7 0.001 0 40 80 120 160nC 200 0.00001 0.0001 0.1 1 s 10 Fig. 6 Typ. transient thermal impedance 321 Typ. turn on gate charge 0.01 t QG Fig. 5 0.001 © 2003 IXYS All rights reserved 3-4 IXEH 40N120 IXEH 40N120D1 20 mJ 6 100 ns 90 td(on) 16 mJ 80 Eon 70 12 4 800 t 600 td(off) 2 30 200 10 A 60 tf 0 0 40 0 80 20 40 8 Eon Fig. 8 4 160 mJ 6 120 Eoff t 3 td(on) 800 ns 600 80 2 40 1 0 0 10 400 td(off) 200 Erec(off) 20 30 40 50 tf 70 Ω 80 60 0 20 30 40 50 RG Fig. 9 70 12 15Ω IRM 24Ω 300 TVJ = 125°C VR = 600 V 10 39Ω 56Ω 50 8 30 tRR 56Ω 15Ω 24Ω 70A 39Ω 24Ω 15Ω 150 50A 75Ω 35A Qrr [µC] 200 75Ω trr [ns] 40 56Ω RG= 39Ω 250 RG= 75Ω IRM [A] Fig.10 Typ. turn off energy and switching times versus gate resistor 350 60 70 Ω 80 60 RG Typ. turn on energy and switching times versus gate resistor TVVJCE=600V = 125°C V =+-15V = 30 A IFTjGE =125°C VIFR=35A = 600 V t Eoff tr 2 Typ. turn off energy and switching times versus collector current VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C mJ ns Eon 4 0 10 0 80 IC Typ. turn on energy and switching times versus collector current VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C A 60 IC Fig. 7 400 20 0 20 1000 RG = 39 Ω TVJ = 125°C 40 RG = 39 Ω TVJ = 125°C Erec(off) 0 Eoff 50 VCE = 600 V VGE = ±15 V Eon 4 Eoff t 1200 ns 60 tr 8 VCE = 600 V VGE = ±15 V 6 IF = 15A 4 20 100 10 50 7,5A 0 0 200 400 600 800 1000 -diF/dt [A/µs] 1200 1400 0 1800 0 0 200 400 600 800 1000 -di F /dt [A/µs] 1200 1400 1600 1800 Fig. 12 Typ. turn off characteristics of free wheeling diode 321 Fig. 11 Typ. turn off characteristics of free wheeling diode 1600 2 © 2003 IXYS All rights reserved 4-4