HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V IXFE48N50QD2 IXFE48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID (cont) RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 2 2 4 D2 HiPerFET MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 44N50Q 48N50Q 39 41 A A IDM TC = 25°C, pulse width limited by max. TJM 44N50Q 48N50Q 176 192 A A IAR TC = 25°C 48 A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, -di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150°C, RG = 2 Ω 15 V/ns PD TC = 25°C 400 W 600 V 60 A DIODE VRRM IFAVM TC = 70°C; rectangular, d = 0.5 IFRM tp <10 µs; pulse width limited by TJ 800 A PD TC = 25°C 180 W -40 ... +150 150 -40 ... +150 °C °C °C 2500 3000 V~ V~ TJ TJM Tstg CASE D3 1 VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque (M4) Weight 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g 1 ISOPLUS 227TM(IXFE) 1 2 3 2 = Gate 1 = Source 4 3 = Drain 4 = Anode/Cathode Features • Popular Buck & Boost circuit topologies • Conforms to SOT-227B outline • Isolation voltage 3000 V~ • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low drain-to-case capacitance (<60 pF) - reduced RFI • Ultra-fast FRED diode with soft reverse recovery Applications • Power factor controls and buck regulators • DC servo and robotic drives • DC choppers • Switch reluctance motor controls Advantages • Easy to mount with 2 screws • Space savings • Tightly coupled FRED IXYS reserves the right to change limits, test conditions, and dimensions. © 2004 IXYS All rights reserved DS98903C(03/04) IXFE44N50QD2 IXFE44N50QD3 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) V GS = 0 V, ID = 1 mA V DS = VGS, ID = 4 mA IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = IT Symbol Test Conditions gfs VDS = 10 V, ID = IT, pulse test 500 2 4 V V ±100 nA TJ = 25°C TJ = 125°C 100 2 µA mA 44N50Q 48N50Q Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 % 0.12 0.11 Ω Ω 30 36 S 8000 930 220 pF pF pF VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf V GS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1Ω (External) 33 22 75 10 ns ns ns ns Qg(on) Qgs Qgd V GS = 10 V, VDS = 0.5 VDSS, ID = IT 190 40 86 nC nC nC RthJC 0.31 RthCK 0.07 Ultra-fast Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions IR TJ= 25°C; VR= VRRM TJ= 150°C; VR= 0.8VRRM 200 2.5 µA mA VF IF = 60A, VGS = 0 V 2.05 V 1.4 V 50 ns 8.3 A Note1 ISOPLUS-227 B Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Ciss Coss C rss Symbol IXFE48N50QD2 IXFE48N50QD3 TJ = 150°C t rr II = 1A, di/dt = -200 A/µs, VR = 30 V, TJ = 25°C 35 IRM IF= 60A, di/dt = -100 A/µs, VR = 100 V, TJ = 100°C RthJC RthJK 0.05 Please note: For characteristic curves please see IXFK48N50Q 0.7 K/W K/W Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. IXFE44N50 IT = 22A IXFE48N50 IT = 24A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344