PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 18 A IDM TC = 25°C, pulse width limited by TJM 80 A IA TC = 25°C 15 A EAS TC = 25°C 1.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 357 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ IISOL ≤ 1mA 3000 V~ 40..120/4.5..27 N/lb. 8 g FC G D G = Gate S = Source Mounting force Weight z z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 15A, Note 1 V 6.5 V ± 200 nA z z z © 2008 IXYS CORPORATION, All rights reserved 50 μA 5 mA 380 mΩ Easy to mount Space savings High power density Applications: z TJ = 125°C UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D = Drain Features z t = 1s S z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99890A (04/08) IXFL30N120P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 15A, Note 1 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS i5-PakTM HV (IXFL) Outline 22 S 19 nF 960 pF 25 pF 1.70 Ω 57 ns RGi Gate input resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 15A 60 ns td(off) RG = 1Ω (External) 95 ns 56 ns 310 nC 104 nC 137 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 15A Qgd 0.35 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM Note: Bottom heatsink meets 2500 Vrms isolation to the other pins. °C/W Characteristic Values Min. Typ. Max. 30 A Repetitive, pulse width limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 15A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1.6 μC 14 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL30N120P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 30 65 VGS = 10V 27 VGS = 10V 9V 60 55 24 50 8V 45 ID - Amperes ID - Amperes 21 18 15 12 7V 9 40 8V 35 30 25 20 15 6 7V 10 3 6V 6V 5 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 25 30 2.8 30 VGS = 10V 8V 27 2.6 VGS = 10V 2.4 RDS(on) - Normalized 24 21 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 7V 18 15 12 9 2.2 2.0 I D = 30A 1.8 1.6 I D = 15A 1.4 1.2 1.0 6V 6 0.8 3 5V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 20 VGS = 10V 2.4 18 TJ = 125ºC 2.2 16 2 14 ID - Amperes RDS(on) - Normalized 15 VDS - Volts VDS - Volts 1.8 1.6 12 10 8 1.4 6 1.2 4 TJ = 25ºC 1 2 0.8 0 0 10 20 30 40 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFL30N120P Fig. 7. Input Admittance Fig. 8. Transconductance 35 30 TJ = - 40ºC 30 25ºC 25 TJ = 125ºC 25ºC - 40ºC 20 g f s - Siemens ID - Amperes 25 15 10 125ºC 20 15 10 5 5 0 0 4.5 5 5.5 6 6.5 7 7.5 0 8 2 4 6 VGS - Volts 12 14 16 18 20 22 24 26 28 30 Fig. 10. Gate Charge 90 16 80 14 70 12 VGS - Volts 60 IS - Amperes 10 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 40 8 TJ = 125ºC VDS = 600V I D = 15A I G = 10mA 10 8 6 30 TJ = 25ºC 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 50 100 VSD - Volts 200 250 300 350 400 450 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz 10,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads 150 QG - NanoCoulombs 1,000 Coss 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_30N120P (97) 4-01-08-C