HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS(on) Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IL(RMS) IDM IAR TC = 25°C Terminal (current limit) T C = 25°C; Note 1 TC = 25°C 180 100 720 180 EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s S G S A A A A D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 600 W Features -55 ... +150 150 -55 ... +150 °C °C °C • International standard package • Encapsulating epoxy meets 300 °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight miniBLOC, SOT-227 B (IXFN) E153432 30 g UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS= 0 V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 8mA 2 IGSS VGS= ±20V, VGS = 0V IDSS VDS= VDSS VGS= 0 V RDS(on) VGS = 10V, ID = 0.5 • ID25 Note 2 © 1999 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4 V ±100 nA 100 2 µA mA 8 mΩ • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density 98546B (8/99) IXFN 180N10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10 V; ID = 60A, Note 2 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 90 S 9100 pF 3200 pF 1600 pF 50 ns 90 ns 140 ns 65 ns Dim. 360 nC A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 65 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 190 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 K/W G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), tf Qg(on) VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd RthJC LOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions 0.21 0.05 Characteristic Values Min. Typ. Max. IS VGS = 0 180 A ISM Repetitive; pulse width limited by TJM 720 A VSD IF = 100 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM Notes: I F = 50 A, -di/dt = 100 A/µs, V R = 50 V 1. 2. miniBLOC, SOT-227 B 1.1 13 M4 screws (4x) supplied Millimeter Min. Max. Inches Min. Max. Pulse width limited by TJM. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFN 180N10 Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 200 200 VGS=10V 9V 8V TJ=25OC ID - Amperes 6V 100 5V 100 5V 0 0 0.0 0.5 1.0 1.5 0 2.0 1 2 3 4 5 VDS - Volts VDS - Volts Figure 4. RDS(on) normalized to 15A/25OC vs. TJ Figure 3. RDS(on) normalized to 15A/25OC vs. ID 1.8 2.0 VGS = 10V O TJ = 125 C 1.6 RDS(ON) - Normalized RDS(ON) - Normalized 6V 50 50 1.4 1.2 TJ = 25OC 1.0 1.8 1.6 ID=180A VGS=10V VGS=15V 1.4 1.2 ID=90A VGS=10V VGS=15V 1.0 0.8 0 50 100 150 0.8 25 200 ID - Amperes 50 75 100 125 150 TJ - Degrees C Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves 125 100 100 80 Terminal Current Limit ID - Amperes ID - Amperes 7V 150 150 ID - Amperes TJ=125OC VGS=10V 9V 8V 7V 75 50 25 40 TJ = 125oC TJ = 25oC 20 0 -50 60 -25 0 25 50 75 TC - Degrees C © 1999 IXYS All rights reserved 100 125 150 0 2 4 6 VGS - Volts 8 IXFN 180N10 Figure 7. Gate Charge Figure 8. Capacitance Curves 15 Ciss 10000 VGS - Volts 12 F = 100kHz Capacitance - pF VDS=50V ID=90A IG=10mA 9 6 Coss 3 Crss 0 1000 0 50 100 150 200 250 300 350 400 0 5 10 15 Gate Charge - nC 20 25 30 35 40 VDS - Volts Figure 10. Forward Bias Safe Operating Area Figure 9. Forward Voltage Drop of the Intrinsic Diode 200 200 100 175 VGS= 0V 1 ms ID - Amperes ID - Amperes 150 125 100 TJ=125OC 75 10 ms 10 50 DC O TC = 25 C TJ=25OC 25 1 0 0.4 0.6 0.8 1.0 1.2 1.4 1 1.6 10 100 VDS - Volts VSD - Volts Figure 11. Transient Thermal Resistance 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 100 101