IXYS IXFX64N50P

IXFK64N50P
IXFX64N50P
PolarTM Power MOSFET
HiPerFETTM
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
=
=
≤
≤
500V
64A
Ω
85mΩ
200ns
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
500
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse Width Limited by TJM
IA
64
A
150
A
TC = 25°C
64
A
EAS
TC = 25°C
2.5
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
830
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
20..120/4.5..27
1.13/10
N/lb.
Nm/lb.in.
6
10
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Force
Mounting Torque
Weight
PLUS247
TO-264
(PLUS247)
(TO-264)
G
D
(TAB)
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
D
= Drain
TAB = Drain
Features
•
•
•
•
•
International Standard Packages
Fast Intrinsic Diode
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
z
z
z
Easy to Mount
Space Savings
High Power Density
Applications
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = 250μA
500
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
V
5.5
V
±200 nA
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
25 μA
1 mA
• DC-DC Coverters
• Battery Chargers
• Switched-Mode and Resonant-Mode
Power Supplies
• DC Choppers
• AC and DC Motor Drives
• Uninterrupted Power Supplies
• High Speed Power Switching
Applications
85 mΩ
DS99348F(5/09)
IXFK64N50P
IXFX64N50P
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
gfs
30
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
50
S
9700
nF
970
pF
30
pF
30
ns
25
ns
85
ns
22
ns
150
nC
50
nC
50
nC
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
TO-264 (IXFK) Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.15 °C/W
RthJC
RthCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min. Typ.
Max.
64
A
Repetitive, Pulse Width Limited by TJM
250
A
VSD
IF = 64A, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
IF = 25A, -di/dt = 100A/μs
0.6
6.0
VR = 100V, VGS = 0V
PLUS 247TM (IXFX) Outline
200 nS
μC
A
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK64N50P
IXFX64N50P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
160
70
VGS = 10V
8V
60
VGS = 10V
8V
140
7V
120
ID - Amperes
ID - Amperes
50
6V
40
30
100
7V
80
60
6V
20
40
5V
10
20
5V
0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
7.0
5
10
20
25
30
Fig. 4. RDS(on) Normalized to ID = 32A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.2
70
VGS = 10V
8V
7V
3.0
VGS = 10V
2.8
2.6
RDS(on) - Normalized
60
50
ID - Amperes
15
VDS - Volts
VDS - Volts
6V
40
30
20
2.4
I D = 64A
2.2
2.0
I D = 32A
1.8
1.6
1.4
1.2
5V
1.0
10
0.8
0.6
0
0.4
0
2
4
6
8
10
12
14
-50
16
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 32A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
3.4
3.2
VGS = 10V
60
TJ = 125ºC
3.0
50
2.6
ID - Amperes
RDS(on) - Normalized
2.8
2.4
2.2
2.0
1.8
1.6
40
30
20
1.4
TJ = 25ºC
1.2
10
1.0
0.8
0
0
20
40
60
80
100
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
120
140
160
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFK64N50P
IXFX64N50P
Fig. 8. Transconductance
90
80
80
70
70
g f s - Siemens
ID - Amperes
Fig. 7. Input Admittance
90
60
50
TJ = 125ºC
25ºC
- 40ºC
40
TJ = - 40ºC
25ºC
60
50
125ºC
40
30
30
20
20
10
10
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
6.5
20
40
60
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
100
120
140
Fig. 10. Gate Charge
240
10
220
9
200
VDS = 250V
I D = 32A
8
I G = 10mA
180
7
160
VGS - Volts
IS - Amperes
80
ID - Amperes
140
120
100
80
5
4
3
TJ = 125ºC
60
6
2
40
TJ = 25ºC
20
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
VSD - Volts
20
40
60
80
100
120
140
160
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.000
Ciss
10,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
1,000
0.100
Coss
100
Crss
0.010
10
0
5
10
15
20
25
30
35
40
VDS - Volts
1
10
100
1000
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_64N50P(9J)4-27-09