IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48 A I C90 TC = 90°C 24 A I CM TC = 25°C, 1 ms 96 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH ICM = 48 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C T JM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md TO-247 SMD (24N60AU1S) Maximum Ratings V CGR = 600 V = 48 A = 2.7 V = 275 ns G C (TAB) E TO-247 AD (24N60AU1) C (TAB) G C G = Gate, E = Emitter, E C = Collector, TAB = Collector Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. l Weight TO-247 SMD TO-247 AD 4 6 g g l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l l l BV CES IC = 750 µA, VGE = 0 V 600 V GE(th) IC = 250 µA, VCE = VGE 2.5 I CES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V V CE(sat) IC TJ = 25°C TJ = 125°C V 5.5 V 500 8 µA mA l l Advantages Space savings (two devices in one package) Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) Reduces assembly time and cost l ±100 nA 2.7 V l = IC90 , VGE = 15 V l ©1997 IXYS Corporation. All rights reserved. 92717H (3/97) IXGH24N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 9 13 S 1500 175 40 pF pF pF IXGH24N60AU1S TO-247 AD Outline ∅P Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 120 15 40 nC nC nC e Dim. Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK Reverse Diode (FRED) 90 11 30 25 15 0.6 150 110 1.5 200 270 ns ns mJ ns ns mJ 25 15 0.8 250 400 2.3 ns ns mJ ns ns mJ 0.25 0.83 K/W K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90 , VGE = 0 V, -diF /dt = 240 A/µs VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 VTJ = 25°C 10 150 35 1.6 V 15 A ns ns 50 RthJC 1 K/W Min. Recommended Footprint (Dimensions in inches and (mm)) 1. Gate 2. Collector 3. Emitter 4. Collector Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 b b1 4.83 2.29 1.91 1.14 1.91 5.21 2.54 2.16 1.40 2.13 .190 .090 .075 .045 .075 .205 .100 .085 .055 .084 C D 0.61 20.80 0.80 21.34 .024 .819 .031 .840 E e L L1 L2 L3 L4 ØP Q R S 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH24N60AU1 Fig. 1 Saturation Characteristics 40 V GE = 15V T J = 25°C 35 IXGH24N60AU1S Fig. 2 Output Characterstics 150 13V 11V 9V T J = 25°C VGE = 15V 125 13V IC - Amperes IC - Amperes 30 25 20 7V 15 100 11V 75 9V 50 10 7V 25 5 0 0 0 1 2 3 4 5 6 7 0 2 4 6 8 Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage Fig. 4 Temperature Dependence of Output Saturation Voltage 1.6 T J = 25°C 9 VGE = 15V VCE(sat) - Normalized 7 VCE - Volts IC = 40A 1.4 8 6 5 IC = 40A 4 IC = 20A 3 2 1.2 IC = 20A 1.0 0.8 IC = 10A 0.6 IC = 10A 1 0 0.4 5 6 7 8 9 10 11 12 13 14 15 -50 -25 0 VGE - Volts 1.2 BV / VGE(th) - Normalized 35 30 25 20 T J = 25°C 10 T J = - 40°C TJ = 125°C 0 3 4 5 6 7 VGE - Volts ©1997 IXYS Corporation. All rights reserved. 75 100 125 150 VGE(th) VCE = 10V 5 50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 40 15 25 TJ - Degrees C Fig. 5 Input Admittance IC - Amperes 14 16 18 20 VCE - Volts VCE - Volts 10 10 12 8 9 1.1 1.0 0.9 G20N60p1.JNB BVCES IC = 250µA 0.8 0.7 0.6 -50 10 IC = 250µA -25 0 25 50 75 TJ - Degrees C 100 125 150 IXGH24N60AU1 T J = 125°C tfi - nanoseconds 500 4 400 300 3 tfi 200 2 100 0 0 10 20 30 40 tfi - nanoseconds RG = 10Ω 400 5 5 TJ = 125°C Eoff Eoff - millijoules 500 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG IC = 24A 4 Eoff 300 3 tfi 200 2 1 100 1 0 0 0 0 50 20 40 60 80 100 120 RG - Ohms IC - Amperes Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 15 100 IC = 24A V CE = 300V 12 10 IC - Amperes VGE - Volts Eoff - millijoules Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current IXGH24N60AU1S 9 6 T J = 125°C RG = 10Ω dV/dt < 3V/ns 1 0.1 3 0.01 0 0 25 50 75 100 0 Qg - nanocoulombs 100 200 300 400 500 600 VCE - Volts G24N60P2.JNB Fig.11 Transient Thermal Impedance 1 D=0.5 Zthjc (K/W) D=0.2 D = Duty Cycle D=0.1 0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH24N60AU1 Fig.13 Peak Forward Voltage V FR and Forward Recovery Time tFR 25 80 20 TJ = 150°C 60 IF = 37A 800 VFR TJ = 100°C 40 1000 TJ = 125°C TJ = 25°C 20 15 600 10 400 5 200 tfr 0 0.5 0 1.0 1.5 2.0 2.5 0 100 200 Voltage Drop - Volts 300 400 500 0 600 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr Fig.15 Reverse Recovery Chargee 1.4 4 TJ = 100°C VR = 350V Qr - nanocoulombs Normalized IRM /Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 max. 2 typ. IF = 60A IF = 30A 1 IF = 15A 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C 1000 Fig.17 Reverse Recovery Time 40 0.8 TJ = 100°C IF = 30A VR = 350V IF = 30A TJ = 100°C max. VR = 350V max. trr - nanoseconds 30 IRM - Amperes 100 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current typ. IF = 60A 20 IF = 30A 3 IF = 30A IF = 15A 10 0 0.6 typ. IF = 60A 0.4 IF = 30A IF = 15A 0.2 0.0 200 400 diF /dt - A/µs ©1997 IXYS Corporation. All rights reserved. 600 0 200 400 diF /dt - A/µs 600 tfr - nanoseconds 100 VFR - Volts Current - Amperes Fig.12 Maximum Forward Voltage Drop IXGH24N60AU1S IXGH24N60AU1 IXGH24N60AU1S Fig.17 Diode Transient Thermal resistance junction to case RthJC - K/W 1.00 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025