IXYS IXGH28N120B

High Voltage IGBT
IXGH 28N120B VCES = 1200 V
=
50 A
IXGT 28N120B IC25
VCE(sat) = 3.5 V
tfi(typ) =
160 ns
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
50
A
IC110
TC = 110°C
28
A
ICM
TC = 25°C, 1 ms
150
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω
Clamped inductive load
PC
Maximum Ratings
ICM = 120
@ 0.8 VCES
A
250
W
TC = 25°C
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
Md
Mounting torque (M3)
(TO-247)
Weight
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = VCES, VGE= 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
300
°C
260
°C
1.13/10Nm/lb.in.
TO-247 AD
TO-268
G
E
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
C (TAB)
TO-247 AD (IXGH)
G
TJM
TJ
TO-268 (IXGT)
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Low switching losses, low V(sat)
MOS Gate turn-on
- drive simplicity
Advantages
= 250 µA , VGE = 0 V
= 250 µA, VCE = VGE
= 28A, VGE = 15 V
© 2004 IXYS All rights reserved
1200
2.5
TJ = 25°C
TJ = 125°C
2.8
2.75
5
V
V
25
µA
±100
nA
3.5
V
V
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98987E(04/04)
IXGH 28N120B
IXGT 28N120B
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 28A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
15
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC = 28A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°°C
23
S
1700
pF
120
pF
45
pF
92
nC
13
nC
35
nC
30
ns
20
IC = 28 A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
280
ns
170
320
ns
2.2
5.0 mJ
td(on)
35
ns
tri
28
ns
0.3
1.4
mJ
mJ
Eon
td(off)
IC = 28A, VGE = 15 V
28N120B
28N120BD1
250
ns
tfi
340
ns
Eoff
4.6
mJ
VCE = 0.8 VCES, RG = Roff = 5 Ω
RthJC
RthCK
∅P
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
ns
210
Eoff
Inductive load, TJ = 125°°C
TO-247 AD Outline
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.5 K/W
(TO-247)
0.25
K/W
Dim.
Min Recommended Footprint
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGH 28N120B
IXGT 28N120B
Fig. 1. Output Characte ristics
@ 25 ºC
Fig. 2. Extended Output Characte ristics
@ 25 ºC
56
240
VGE = 15V
49
15V
180
35
I C - Amperes
I C - Amperes
42
VGE = 17V
210
13V
11V
9V
28
21
7V
13V
150
120
11V
90
9V
60
14
7
30
5V
7V
0
0
1
1.5
2
2.5
3
3.5
4
4.5
0
5
2
4
6
8
Fig. 3. Output Characteristics
@ 125 ºC
14
16
18
20
1.4
VGE = 15V
49
13V
11V
VGE = 15V
1.3
VC E (sat)- Normalized
42
I C - Amperes
12
Fig. 4. Dependence of V CE(sat) on
Tem perature
56
9V
35
28
7V
21
14
I C = 56A
1.2
1.1
I C = 28A
1.0
0.9
I C = 14A
0.8
7
5V
0
0.7
1
1.5
2
2.5
3
3.5
V CE - Volts
4
4.5
-50
5
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
8
100
TJ = 25ºC
90
7
80
6
I C = 56A
I C - Amperes
VC E - Volts
10
V C E - Volts
V C E - Volts
28A
14A
5
4
70
60
50
40
TJ = 125ºC
30
25ºC
20
3
-40ºC
10
2
0
6
7
8
9
10
11
12
13
V G E - Volts
© 2004 IXYS All rights reserved
14
15
16
17
4
5
6
7
V G E - Volts
8
9
10
IXGH 28N120B
IXGT 28N120B
Fig. 8. Dependence of Turn-off
Fig. 7. Trans conductance
Ene rgy Loss on RG
35
18
TJ = -40ºC
20
15
10
I C = 56A
VGE = 15V
14
125ºC
25
TJ = 125ºC
16
25ºC
E o f f - milliJoules
g f s - Siemens
30
VCE = 960V
12
10
8
I C = 28A
6
4
5
I C = 14A
2
0
0
0
10
20
30
40
50
60
70
80
90
100
0
I C - Amperes
10
Fig. 9. Dependence of Turn-Off
Energy Los s on IC
10
7
VCE = 960V
8
VCE = 960V
E o f f - milliJoules
E o f f - MilliJoules
8
VGE = 15V
5
4
TJ = 25ºC
3
0
35
40
45
50
55
I C = 14A
25
60
TJ = 125ºC
VGE = 15V
VCE = 960V
600
I C = 14A
I C = 56A
I C = 28A
400
Switching Time - nanoseconds
tfi - - - - - -
800
55
65
75
85
95
105 115 125
Sw itching Tim e on IC
450
td(off)
1000
45
Fig. 12. Depe ndence of Turn-off
Sw itching Tim e on RG
1200
35
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-off
1400
100
3
1
30
90
4
0
I C - Amperes
80
I C = 28A
5
2
25
70
6
1
20
60
7
2
15
50
I C = 56A
9
6
40
R G - Ohms
R G = 5Ω
10
VGE = 15V
10
Switching Time - nanoseconds
30
Fig. 10. De pende nce of Turn-off
Ene rgy Loss on Tem pe rature
11
TJ = 125ºC
R G = 5Ω
9
20
200
400
td(off)
tfi - - - - - -
350
300
R G = 5Ω
TJ = 125ºC
VGE = 15V
VCE = 960V
250
200
TJ = 25ºC
150
100
0
10
20
30
40
50
60
R G - Ohms
70
80
90
10
100
15
20
25
30
35
40
I C - Amperes
45
50
55
60
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGH 28N120B
IXGT 28N120B
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
Fig. 14. Gate Charge
16
td(off)
400
tfi - - - - - -
I G = 10mA
I C = 14A
VGE = 15V
300
I C = 28A
12
R G = 5Ω
350
VCE = 600V
14
I C = 56A
VG E - Volts
Switching Time - nanoseconds
450
VCE = 960V
I C = 28A
250
200
10
8
6
4
150
I C = 14A
2
I C = 56A
100
0
25
35
45
55
65
75
85
95
105 115 125
0
TJ - Degrees Centigrade
10
30
40
50
60
70
80
90
100
Q G - nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
Fig. 15. Capacitance
10000
140
f = 1 MHz
120
C ies
1000
I C - Amperes
Capacitance - p F
20
C oes
100
C res
10
100
80
60
40
TJ = 125ºC
20
dV/dT < 10V/ns
R G = 5Ω
0
0
5
10
15
20
25
V C E - Volts
30
35
40
100
300
500
700
900
1100
1300
V C E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
R ( t h ) J C - ºC / W
1.00
0.50
0.10
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000