ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 40N60C Electrically Isolated Back Surface VDSS = 600 V ID25 = 28 A Ω RDS(on) = 96 mΩ N-Channel Enhancement Mode Low RDS(on), High Voltage,, MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1 28 A ID90 TC = 90°C, Note 1 19 A ID(RMS) Package lead current limit 45 A EAS EAR Io Io PD TC = 25°C = 10A, TC = 25°C = 20A 690 1 mJ mJ 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +125 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s 300 °C VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~ FC Mounting force 11 ... 65 / 2.4 ...11 N/lb 3 Weight ISOPLUS 220TM G D S Isolated back surface* G = Gate, S = Source D = Drain, * Patent pending Features l l g l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 2ND generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) Low thermal resistance due to reduced chip thickness Low drain to tab capacitance(<30pF) Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l l RDS(on) VGS = 10 V, ID = ID90, Note 3 VGS = 10 V, ID = ID90, Note 3 TJ = 125°C VGS(th) VDS = VGS, ID = 2 mA IDSS VDS = VDSS VGS = 0 V IGSS VGS = ±20 VDC, VDS = 0 80 230 3.5 TJ = 25°C TJ = 125°C 96 mΩ mΩ 5.5 V 2 µA µA 20 ±200 nA l Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) Power Factor Correction (PFC) Welding Inductive Heating Advantages l l l Easy assembly: no screws or isolation foils required Space savings High power density COOLMOS is a trademark of Infineon Technolgy © 2001 IXYS All rights reserved 98847 (6/01) IXKC 40N60C Symbol Test Conditions 158 Qg(on) Qgs VGS = 10 V, VDS = 350 V, ID = 40 A Qgd td(on) tr VGS = 10 V, VDS = 380V td(off) ID = 40 A, RG = 1.8 Ω tf nC 42 nC 92 nC 20 ns 55 ns 60 ns 10 ns 0.5 RthJC K/W 0.30 RthCH Reverse Correction Symbol Test Conditions VSD IF = 20 A, VGS = 0 V Note 3 ISOPLUS220 OUTLINE Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 0.8 1.2 V Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025