INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2002. MIL-PRF-19500/595D 13 August 2002 SUPERSEDING MIL-PRF-19500/595C 26 August 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). * 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (T0-267AB) for surface mount devices, and figure 3 for JANHC and JANKC (die) dimensions. * 1.3 Maximum ratings (TC = +25°C, unless otherwise specified). Type 2N7236, 2N7236U 2N7237, 2N7237U Min V(BR)DSS VGS = 0 ID = -1.0 mA dc V dc -100 -200 PT (1) TC = +25°C PT TA = +25°C VGS ID1 (2) TC = +25°C ID2 (2) TC = +100°C IS IDM (3) Top and TSTG RθJC max W W V dc A dc A dc A dc A(pk) °C °C/W 125 125 4.0 4.0 ±20 ±20 -18 -11 -11 -7 -18 -11 -72 -44 -55 to +150 -55 to +150 1.0 1.0 See footnotes next page. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited FSC 5961 MIL-PRF-19500/595D * 1.3 Maximum ratings - continued. Type 2N7236, 2N7236U 2N7237, 2N7237U IAR (2) EAS EAR rDS(on) max (4) VGS = -10 V dc ID = ID2 TJ = +25°C TJ = +150°C A mj mj ohm ohm -18 -11 500 500 12.5 12.5 0.20 0.51 0.400 1.122 TJ(max) - TC (1) Derate linearly 1.0 W/°C for TC > +25°C; PT = -----------------------RθJX (2) ID= T J( max ) - T C ( RθJX) x ( R DS(on) at T J( max ) (3) IDM = 4 x ID as calculated by footnote (2). (4) Pulsed (see 4.5.1). * 1.4 Primary electrical characteristics. TC = +25°C (unless otherwise specified). Type Min V(BR)DSS VGS = 0 ID = -1.0 mA dc Max IDSS1 VGS = 0 VDS = 80 percent of rated VDS Max rDS(on)1 (1) VGS(th)1 VDS ≥ VGS ID = -0.25 mA dc V dc µA dc Ohms 25 25 0.20 0.51 V dc 2N7236, 2N7236U 2N7237, 2N7237U (1) -100 -200 Min -2.0 -2.0 Max -4.0 -4.0 Pulsed (see 4.5.1). 2 ID = ID2 VGS = 10 V MIL-PRF-19500/595D Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .750 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 3, 4 TT .040 .050 1.02 1.27 3, 4 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Glass meniscus included in dimension TL and TW. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 1. Physical dimensions for TO-254AA (2N7236 and 2N7237). 3 MIL-PRF-19500/595D Dimensions Symbol BL BW CH LH LL1 LL2 Inches Millimeters Min .620 .445 .010 .410 .152 Max .630 .455 .142 .020 .420 Min 15.75 11.30 0.26 10.41 .162 3.86 .210 BSC LS1 4.11 5.33 BSC .105 BSC LS2 Max 16.00 11.56 3.60 0.50 10.67 2.67 BSC LW 1 .370 .380 9.40 9.65 LW 2 .135 .145 3.43 3.68 Q1 .030 Q2 Term 1 Term 2 Term 3 .035 0.76 0.89 Drain Gate Source NOTES: 1. 2. 3. 4. Dimensions are in inches. Metric equivalents are given for information only. The lid shall be electrically isolated from the drain, gate and source. Dimensioning and tolerancing shall be in accordance with ASME Y14.5M. * FIGURE 2. Dimensions and configuration of surface mount package outline (T0-267AB), 2N7236U and 2N7237U). 4 MIL-PRF-19500/595D A version Inches .018 .025 .027 .042 .060 .063 .162 .170 .192 .219 mm 0.46 0.64 0.69 1.07 1.52 1.60 4.11 4.32 4.88 5.56 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. Physical characteristics of the die thickness = .0187 inch (0.47 mm). 5. Back metal: Cr - Ni - Ag. 6. Top metal: Al. 7. Back contact: Drain. 8. See 6.5 for ordering information. * FIGURE 3. Physical dimensions JANHC and JANKC die. 5 MIL-PRF-19500/595D 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (T0-254AA), 2 (T0-267AB, surface mount), and 3 (die) herein. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3 (ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. * 3.4.1 Lead formation material and finish. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation material or finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, group A, subgroup 2 herein. 6 MIL-PRF-19500/595D * 3.4.2 Internal construction. Multiple chip construction shall not be permitted to meet the requirements of this specification. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive and grounded surface. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source. R ≤ 100 k, whenever bias voltage is to be applied drain to source. * 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. * 3.7 Electrical test requirements. The electrical test requirements shall be table I, group A as specified herein. * 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. * 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. * 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with figure 2 of MIL-PRF-19500. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 7 MIL-PRF-19500/595D * 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV level (1) Gate stress test (see 4.5.5) Gate stress test (see 4.5.5) (1) Method 3470 of MIL-STD-750. (see 4.5.4) Method 3470 of MIL-STD-750. (see 4.5.4) (1) Method 3161 of MIL-STD-750 (see 4.5.3) Method 3161 of MIL-STD-750 (see 4.5.3) IGSS1, IDSS1, subgroup 2 of table I herein; Subgroup 2 of table I herein 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSS1, IDSS1, rDS(on)1, VGS(th)1 Subgroup 2 of table I herein. ∆IGSS1 = ±20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ±25 µA dc or ± 100 percent of initial value, whichever is greater. IGSS1, IDSS1, rDS(on)1, VGS(th)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A or TA = +175°C and t = 48 hours 13 Subgroup 2 and 3 of table I herein. ∆IGSS1 = ±20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ±25 µA dc or ± 100 percent of initial value, whichever is greater. Subgroup 2 of table I herein. ∆IGSS1 = ±20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ±25 µA dc or ± 100 percent of initial value, whichever is greater. ∆rDS(on)1 = ±20 percent of initial value. ∆VGS(th)1 = ±20 percent of initial value. ∆rDS(on)1 = ±20 percent of initial value. ∆VGS(th)1 = ±20 percent of initial value. (1) 9 (1) Shall be performed anytime before screen 10. * 4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500, (appendix H), as a minimum die shall be 100 percent probed in accordance with table I, group A, subgroup 2, except test current shall not exceed 20 A. * 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for conformance inspection in accordance with figure 4, appendix E of MIL-PRF-19500. 8 MIL-PRF-19500/595D * 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. End-point electrical measurements shall be in accordance with table I, group A, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, group A, subgroup 2 herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method B3 1051 Test condition G. B3 2037 Test condition A. All internal wires for each device shall be pulled separately. If group B3 is to be continued to C6, strength test may be performed after C6. B4 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during the "on" cycle. B5 1042 A separate sample may be pulled for each test. Accelerated steady-state reverse bias; test condition A, VDS = rated, TA = +175°C, t = 120 hours, read and record VBR(DSS) (pre and post) at ID = -1 mA dc. Read and record IDSS (pre and post) in accordance with table I, subgroup 2 herein. VBR(DSS) delta cannot exceed 10 percent. B5 2037 Bond strength (Al-Au die interconnects only); test condition A. B6 3161 See 4.5.2. Condition * 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method B2 1051 Test condition G. B3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. Condition * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, group A, subgroup 2 herein. Subgroup Method Conditions C2 2036 Test condition A; weight = 10 pounds, t = 10 s (not applicable for surface mount devices). C6 1042 Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 9 MIL-PRF-19500/595D 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. RθJC(max) = 1.0°C/W for TO-254AA case style devices and surface mount devices. The following parameter measurements shall apply: a. Measuring current (IM) .................................. 10 mA. b. Drain heating current (IH).............................. 3.3 A minimum (2.5 A minimum for surface mount devices). c. Heating time (tH) ........................................... Steady-state (see MIL-STD-750, method 3161 for definition). d. Drain-source heating voltage (VH)................ 25 V minimum (20 V minimum for surface mount devices). e. Measurement time delay (tMD) ...................... 30 to 60 µs maximum. f. Sample window time (tSW ) ............................ 10 µs maximum. 4.5.3 Thermal impedance (ZθJC measurements). The ZθJC measurements shall be performed in accordance with method 3161 of MIL-STD-750. The maximum limit (not to exceed the table I, group A, subgroup 2 limit or figure 4 thermal impedance curve) for ZθJC in screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation and disposition. This procedure may be used in lieu of an in line monitor. The following parameter measurements shall apply: a. Measuring current (IM) .................................. 10 mA. b. Drain heating current (IH).............................. 3.3 A minimum (2.5 A minimum for surface mount devices). c. Heating time (tH) ........................................... 100 ms minimum (25 ms minimum for surface mount devices). d. Drain-source heating voltage (VH)................ 25 V minimum (20 V minimum for surface mount devices). e. Measurement time delay (tMD) ...................... 30 to 60 µs maximum. f. Sample window time (tSW ) ............................ 10 µs maximum. 4.5.4 Single pulse avalanche energy (EAS). a. Peak current (ID)............................................. IAR(max). b. Peak gate voltage (VGS) ................................. -10 V. c. Gate to source resistor (RGS).......................... 25 ≤ RGS ≤ 200 Ω. d. Initial case temperature.................................. +25°C +10°C, -5°C. e. Inductance...................................................... 2 E AS VBR − VDD mH minimum. 2 ( I D1 ) V BR f. Number of pulses to be applied ...................... 1 pulse minimum. g. Supply voltage (VDD) ...................................... 25 V for 2N7236, 2N7236U, -50 V for 2N7237, 2N7237U. 4.5.5 Gate stress test. Apply VGS = 30 V minimum for t = 250 µs minimum. 10 MIL-PRF-19500/595D * TABLE I. Group A inspection. Inspection 1/ Limits MIL-STD-750 Unit Symbol Method Condition Min Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 2/ 3161 See 4.5.3 Breakdown voltage, drain to source 2N7236, 2N7236U 2N7237, 2N7237U 3407 Bias condition C, VGS = 0V, ID = 1 mA dc Gate to source voltage (threshold) 3403 VDS ≥ VGS, ID = -.25 mA Gate reverse current 3411 Bias condition C, VGS = ±20 V dc, VDS = 0 V dc Drain current 3413 Bias condition C, VGS = 0 V dc, VDS = 80 percent of rated VDS Static drain to source on-state resistance 2N7236, 2N7236U 2N7237, 2N7237U 3421 VGS = 10 V dc, condition A, pulsed (see 4.5.1), ID = rated ID2 (see 1.3) Static drain to source on-state resistance 3421 -100 -200 VGS = -10 V dc, condition A, pulsed (see 4.5.1), ID = rated ID1 (see 1.3) 4011 VGS = 0 V dc ID = rated ID1, pulsed (see 4.5.1) 2N7236, 2N7236U 2N7237, 2N7237U See footnotes at end of table. 11 °C/W V (BR)DSS VGS(th)1 -2.0 V dc V dc -4.0 V dc IGSS1 ±100 nA dc IDSS1 -25 µA dc 0.20 0.51 Ω Ω 0.22 0.52 Ω Ω 1.5 V -4.2 -4.6 V V rDS(on)1 rDS(on)2 2N7236, 2N7236U 2N7237, 2N7237U Forward voltage (source drain diode) 1.30 Z θJC VSD MIL-PRF-19500/595D * TABLE I. Group A inspection - Continued. Inspection 1/ Limits MIL-STD-750 Unit Symbol Method Condition Min Max Subgroup 3 High temperature operation: TC = TJ = +125°C Gate reverse current 3411 Bias condition C VGS = ±20 V dc, VDS = 0 V dc, IGSS2 ±200 nA dc Drain current 3413 Bias condition C, VGS = 0 V dc, VDS = 100 percent of rated VDS IDSS2 -1.0 mA dc Drain current 3413 Bias condition C, VGS = 0 V dc, VDS = 80 percent of rated VDS IDSS3 -0.25 mA dc Gate to source voltage (threshold) 3403 VDS ≥ VGS, ID = -0.25 mA VGS(th)2 Static drain to source on-state resistance 2N7236, 2N7236U 2N7237, 2N7237U 3421 VGS = -10 V dc, pulsed (see 4.5.1), ID = rated ID2 (see 1.3) rDS(on)3 Low temperature operation: Gate to source voltage (threshold) -1.0 V dc 0.34 1.10 Ω Ω VGS(th)3 -5.0 V dc td(on) 35 ns tr 85 ns td(off) 85 ns tf 65 ns TC = TJ = -55°C 3403 VDS ≥ VGS, ID = -0.25 mA 3472 ID = rated ID2 (see 1.3), VGS = -10 V dc, gate drive impedance = 9.1 Ω, VDD = 50 percent of VBR(DSS) Subgroup 5 Switching time test Turn-on delay time Rise time Turn-off delay time Fall time See footnotes at end of table. 12 MIL-PRF-19500/595D * TABLE I. Group A inspection - Continued. Inspection 1/ Limits MIL-STD-750 Unit Symbol Method Condition 3474 See figure 5; tp = 10 ms, VDS = 80 percent of rated VBR(DSS), VDS = 200 V maximum Min Max Subgroup 5 Safe operating area test (high voltage) See table I, group A, subgroup 2 Electrical measurements Subgroup 6 Not applicable Subgroup 7 Gate charge 3471 Condition B On-state gate charge 2N7236, 2N7236U 2N7237, 2N7237U Qg(on) Gate to source charge 2N7236, 2N7236U 2N7237, 2N7237U Qgs Gate to drain charge 2N7236, 2N7236U 2N7237, 2N7237U Qgd Reverse recovery time 3473 di/dt ≤ 100 A/µs, VDD ≤ 30 V, ID = ID1, (see 1.3) 2N7236, 2N7236U 2N7237, 2N7237U 1/ 2/ 60 60 nC nC 13 15 nC nC 35.2 38 nC nC 280 440 ns ns trr For sampling plan, see MIL-PRF-19500. This test is required for the following end-point measurement only (not intended for screen 13): JANS, table VIa of MIL-PRF-19500, group B, subgroups 3 and 4; JANTX and JANTXV, table VIb of MIL-PRF-19500, group B, subgroups 2 and 3; and table VII of MIL-PRF-19500, group C, subgroup 6, and table IX of MIL-PRF-19500, group E, subgroup 1. 13 MIL-PRF-19500/595D * TABLE II. Group E inspection (all quality levels except JANHC and JANKC) for qualification only. Inspection MIL-STD-750 Method Conditions 22 devices c=0 Subgroup 1 Temperature cycling Sampling plan 1051 500 cycles, test condition G Hermetic Seal Fine leak Gross leak See table I, group A, subgroup 2 Electrical measurements 45 devices c=0 Subgroup 2 1/ Steady-state reverse bias 1042 See table I, group A, subgroup 2 Electrical measurements Steady-state gate bias Condition A, 1,000 hours 1042 Electrical measurements Condition B, 1,000 hours See table I, group A, subgroup 2 Subgroup 3 Not applicable Subgroup 4 Thermal resistance 5 devices c=0 3161 See 4.5.2 Subgroup 5 Not applicable 5 devices c=0 Subgroup 6 Repetitive avalanche energy Electrical measurements 3469 Peak current IAR = ID; Peak gate voltage VGS = -10 V; Gate to source resistor, RGS 25 ≤ RGS ≤ 200 ohms Temperature = TJ = +150°C +0, -10°C. Inductance = 2 E VBR − VDD mH minimum AR2 ( I D1 ) VBR Number of pulses to be applied = 3.6 X 108; Supply voltage (VDD) = -25 V for 2N7236 and 2N7236U, (VDD) = -50 V for 2N7237 and 2N7237U, time in avalanche = 2 µs min., 20 µs max., frequency = 500 Hz minimum. See table I, group A, subgroup 2 1/ A separate sample for each test may be pulled. 14 MIL-PRF-19500/595D FIGURE 4. Thermal response curves. 15 MIL-PRF-19500/595D 2N7236, 2N7236U 2N7237, 2N7237U * FIGURE 5. Safe operating area graphs. 16 MIL-PRF-19500/595D 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) * 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. * 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). c. Packaging requirements (see 5.1). d. Lead finish (see 3.4.1). e. Type designation and product assurance level and for die acquisition, specify the JANHC or JANKC letter version (see figure 3). * 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. * 6.4 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and user's Part or Identifying Number (PIN). This information in no way implies that manufacturer's PIN's are suitable as a substitute for the military PIN. Military PIN 2N7236 2N7237 2N7236U 2N7237U Manufacturer's CAGE 59993 59993 59993 59993 17 Manufacturer's and user's PIN IRFM9140 IRFM9240 IRFM9140 IRFM9240 MIL-PRF-19500/595D * 6.5 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example JANHCA2N7236) will be identified on the QML. JANC ordering information Military PIN 2N7236 2N7237 Manufacturer 59993 59993 JANHCA2N7236 JANKCA2N7236 JANHCA2N7219 JANKCA2N7219 * 6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2644) Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19 18 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/595D 2. DOCUMENT DATE 13 August 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99