J/SST108 Series Vishay Siliconix N–Channel JFETs J108 SST108 J109 SST109 J110 SST110 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST108 J/SST109 –3 to –10 8 20 4 –2 to –6 12 20 4 J/SST110 –0.5 to –4 18 20 4 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: J108 <8 W Fast Switching—tON: 4 ns Low Leakage: 20 pA Low Capacitance: 11 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters DESCRIPTION The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. The SST108 series is comprised of surface-mount devices featuring the lowest rDS(on) of any TO-236 (SOT-23) JFET device. The TO-226AA (TO-92) plastic package provides a low-cost option. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products packaged in TO-206AC (TO-52), see the 2N5432/5433/5434 data sheet. TO-226AA (TO-92) D 1 TO-236 (SOT-23) D 1 3 S G 2 3 Top View J108, J109, J110 Document Number: 70231 S-04028—Rev. E, 04-Jun-01 S G 2 Top View SST108 (I8)* SST109 (I9)* SST110 (I0)* *Marking Code for TO-236 www.vishay.com 7-1 J/SST108 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Notes a. Derate 2.8 mW/_C above 25_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST108 Symbol Test Conditions Typa Min V(BR)GSS IG = –1 mA , VDS = 0 V –32 –25 VGS(off) VDS = 5 V, ID = 1 mA –3 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 80 Gate Reverse Current IGSS Parameter Max J/SST109 Min J/SST110 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Current Drain Cutoff Current IG ID(off) VGS = –15 V, VDS = 0 V –0.01 VDG = 10 V, ID = 10 mA –0.01 0.02 TA = 125_C VGS = 0 V, VDS v 0.1 V Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V –10 –2 –6 40 –3 –0.5 –4 10 –3 mA –3 –5 VDS = 5 V, VGS = –10 V rDS(on) –25 V TA = 125_C Drain-Source On-Resistance –25 nA 3 3 3 8 12 18 1.0 0.7 W V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs 17 VDS = 5 V, ID = 10 mA, f = 1 kHz gos rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz Ciss VDS = 0 V VGS = 0 V f = 1 MHz Crss VDS = 0 V VGS = –10 V f = 1 MHz en mS 0.6 SST 60 J Series 60 SST 11 J Series 11 VDG = 5 V, ID = 10 mA f = 1 kHz 3.5 8 12 18 85 85 85 W pF 15 15 15 nV⁄ √Hz Switching Turn-On Time Turn-Off Time td(on) tr td(off) 3 VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 7-2 1 4 ns 18 NIP Document Number: 70231 S-04028—Rev. E, 04-Jun-01 J/SST108 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 800 12 600 rDS IDSS 8 400 4 200 0 – Saturation Drain Current (mA) 16 rDS(on) – Drain-Source On-Resistance ( Ω ) rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 15 V, VGS = 0 V –4 –2 –8 –6 TA = 25_C 40 VGS(off) = –2 V 30 20 –4 V 10 –8 V 0 0 0 On-Resistance vs. Drain Current 50 1000 I DSS rDS(on) – Drain-Source On-Resistance ( Ω ) 20 –10 1 10 VGS(off) – Gate-Source Cutoff Voltage (V) On-Resistance vs. Temperature Output Characteristics 100 ID = 10 mA rDS changes X 0.7%/_C VGS(off) = –2 V 80 32 – Drain Current (mA) VGS(off) = –2 V 24 16 –4 V 60 VGS = 0 V –0.2 V 40 –0.4 V I D rDS(on) – Drain-Source On-Resistance ( Ω ) 40 –8 V 8 –0.6 V 20 –0.8 V 0 0 –55 –35 –15 5 25 45 65 85 105 125 0 2 4 6 8 10 VDS – Drain-Source Voltage (V) TA – Temperature (_C) Turn-On Switching Turn-Off Switching 5 30 td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = –10 V tr approximately independent of ID VDD = 1.5 V, RG = 50 Ω VGS(L) = –10 V 24 Switching Time (ns) 4 Switchng Time (ns) 100 ID – Drain Current (mA) td(on) @ ID = 25 mA 3 td(on) @ ID = 10 mA 2 1 tf VGS(off) = –8 V 12 td(off) 6 tr 0 VGS(off) = –2 V 18 0 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) Document Number: 70231 S-04028—Rev. E, 04-Jun-01 –10 0 5 10 15 20 25 ID – Drain Current (mA) www.vishay.com 7-3 J/SST108 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance vs. Gate-Source Voltage Transconductance vs. Drain Current 100 100 VGS(off) = –4 V gfs – Forward Transconductance (mS) VDS = 0 V f = 1 MHz Capacitance (pF) 80 60 40 Ciss Crss 20 TA = –55_C 10 125_C VDS = 5 V f = 1 kHz 1 0 0 –4 –8 –12 –16 –20 1 10 VGS – Gate-Source Voltage (V) 200 40 30 gfs 80 20 gos 40 10 en – Noise Voltage nV / 160 Hz VDS = 5 V gos – Output Conductance (µS) gfs and gos @ VDS = 5 V VGS = 0 V, f = 1 kHz gfs – Forward Transconductance (mS) Noise Voltage vs. Frequency 100 50 120 100 ID – Drain Current (mA) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 10 ID = 10 mA 40 mA 0 1 0 0 –2 –4 –6 –8 10 –10 100 1k VGS(off) – Gate-Source Cutoff Voltage (V) 10 k 100 k f – Frequency (Hz) Gate Leakage Current Common Gate Input Admittance 100 nA 100 TA = 125_C 10 nA gig 5 mA ID =10 mA 10 (mS) 1 nA 1 mA IGSS @ 125_C 100 pA 5 mA I G – Gate Leakage 25_C 1 TA = 25_C 10 pA big 1 mA 10 mA TA = 25_C VDG = 20 V ID = 20 mA IGSS @ 25_C 1 pA 0.1 0 4 8 12 VDG – Drain-Gate Voltage (V) www.vishay.com 7-4 16 20 10 20 50 100 f – Frequency (MHz) Document Number: 70231 S-04028—Rev. E, 04-Jun-01 J/SST108 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common Gate Forward Admittance Common Gate Reverse Admittance 100 10 –gfg TA = 25_C VDG = 20 V ID = 20 mA 10 –grg (mS) (mS) 1.0 bfg –brg 0.1 1 TA = 25_C VDG = 20 V ID = 20 mA 0.01 0.1 10 10 100 50 20 20 f – Frequency (MHz) 100 50 f – Frequency (MHz) Common Gate Output Admittance 100 TA = 25_C VDG = 20 V ID = 20 mA 10 (mS) bog gog 1 0.1 20 10 50 100 f – Frequency (MHz) VDD SWITCHING TIME TEST CIRCUIT J/SST108 J/SST109 J/SST110 VGS(L) –12 V –7 V –5 V RL* 150 W 150 W 150 W ID(on) 10 mA 10 mA 10 mA *Non-inductive INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Document Number: 70231 S-04028—Rev. E, 04-Jun-01 RL OUT VGS(H) VGS(L) SAMPLING SCOPE Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF 1 kΩ 51 Ω VIN Scope 51 Ω www.vishay.com 7-5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1