VISHAY J310

J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
J308
SST308
U309
J309
SST309
U310
J310
SST310
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
J308
−1 to −6.5
J309
−1 to −4
−25
8
12
−25
10
J310
12
−2 to −6.5
−25
8
24
SST308
−1 to −6.5
−25
8
12
SST309
−1 to −4
−25
10
12
SST310
−2 to −6.5
−25
8
24
U309
−1 to −4
−25
10
12
U310
−2.5 to −6
−25
10
24
FEATURES
BENEFITS
D Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
D Very Low Noise: 2.7 dB @ 450 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D
D
D
D
D
APPLICATIONS
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.
and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities
TO-226AA
(TO-92)
D
1
S
2
G
3
For similar dual products packaged in the TO-78, see the
U430/431 data sheet.
TO-206AC
(TO-52)
TO-236
(SOT-23)
D
S
1
3
Top View
J308
J309
J310
S
1
G
2
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236
2
3
D
G and Case
Top View
U309
U310
For applications information see AN104.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
1
J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V
Gate Current :
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature :
(J/SST Prefixes) . . . . . . . . . . . . . . −55 to 150_C
(U Prefix) . . . . . . . . . . . . . . . . . . . . −65 to 175_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
(J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW
(U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Power Dissipation :
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
Limits
J/SST308
Parameter
Symbol
Test Conditions
Typa
V(BR)GSS
IG = −1 mA , VDS = 0 V
−35
VGS(off)
VDS = 10 V, ID = 1 nA
J/SST309
Min Max Min
J/SST310
Max Min
Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain
Currentb
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
IDSS
IGSS
TA = 125_C
−25
−25
V
−1
−6.5
−1
−4
−2
−6.5
V
12
60
12
30
24
60
mA
−0.002
−1
−1
−1
nA
−0.001
−1
−1
−1
mA
VDS = 10 V, VGS = 0 V
VGS = −15 V, VDS = 0 V
−25
IG
VDG = 9 V, ID = 10 mA
−15
pA
rDS(on)
VGS = 0 V, ID = 1 mA
35
W
VGS(F)
IG = 10 mA
VDS = 0 V
J
0.7
1
1
1
V
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Common-Source
Input Capacitance
Ciss
i
Common Source
Common-Source
Reverse Transfer C
Capacitance
Crss
Equivalent Input
Noise Voltage
en
14
VDS = 10 V, ID = 10 mA
f = 1 kHz
VDS = 10 V
VGS = −10
10 V
f = 1 MHz
8
10
mS
110
250
250
250
5
5
5
2.5
2.5
2.5
J
4
SST
4
J
1.9
SST
1.9
VDS = 10 V, ID = 10 mA
f = 100 Hz
8
6
mS
pF
nV⁄
√Hz
High Frequency
Common-Gate
Forward Transconductance
f = 105 MHz
gfg
f
Common-Gate
Output Conductance
gog
Common Gate Power Gainc
Common-Gate
Gpg
Noise Figure
NF
VDS = 10 V
ID = 10 mA
13
f = 105 MHz
0.16
f = 450 MHz
0.55
f = 105 MHz
16
f = 450 MHz
11.5
f = 105 MHz
1.5
f = 450 MHz
2.7
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
www.vishay.com
2
14
f = 450 MHz
mS
dB
NZB
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)
Limits
U309
Parameter
Symbol
Test Conditions
Typa
Min
V(BR)GSS
IG = −1 mA , VDS = 0 V
−35
−25
VGS(off)
VDS = 10 V, ID = 1 nA
IDSS
VDS = 10 V, VGS = 0 V
U310
Max
Min
Max
Unit
−1
−4
−2.5
−6
V
12
30
24
60
mA
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain
Currentb
Gate Reverse Current
Gate Operating Current
IGSS
VGS = −15 V, VDS = 0 V
TA = 125_C
−25
V
−0.002
−0.15
−0.15
nA
−0.001
−0.15
−0.15
mA
IG
VDG = 9 V, ID = 10 mA
−15
pA
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, ID = 1 mA
35
W
Gate-Source Forward Voltage
VGS(F)
IG = 10 mA , VDS = 0 V
0.7
1
1
V
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Common-Source
Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
Equivalent Input Noise Voltage
en
VDS = 10 V, ID = 10 mA
f = 1 kHz
VDS = 10 V, VGS = −10 V
f = 1 MHz
VDS = 10 V, ID = 10 mA
f = 100 Hz
14
10
mS
10
110
250
250
4
5
5
1.9
2.5
2.5
mS
pF
nV⁄
√Hz
6
High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
Common Gate Power Gainc, d
Common-Gate
Noise
Figured
gfg
f
gog
VDS = 10 V
ID = 10 mA
Gpg
NF
f = 105 MHz
14
f = 450 MHz
13
f = 105 MHz
0.16
f = 450 MHz
0.55
f = 105 MHz
16
14
14
f = 450 MHz
11.5
10
10
f = 105 MHz
1.5
2
2
f = 450 MHz
2.7
3.5
3.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
d. Not a production test.
mS
dB
NZB
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
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J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
40
60
30
gfs
40
20
IDSS
20
10
0
IG @ ID = 10 mA
−3
−4
IGSS @ 125_C
100 pA
10 mA
TA = 25_C
1 pA
0.1 pA
−5
IGSS @ 25_C
0
3
6
12
15
VDG − Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
300
240
60
rDS
180
gos
40
120
20
60
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
0
−1
−2
−3
−4
20
gos − Output Conductance (mS)
80
0
VGS(off) = −3 V
TA = −55_C
12
25_C
8
125_C
4
0
−5
0.1
1
VGS(off) = −1.5 V
10
ID − Drain Current (mA)
Output Characteristics
15
VDS = 10 V
f = 1 kHz
16
VGS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
30
VGS(off) = −3 V
VGS = 0 V
12
VGS = 0 V
24
ID − Drain Current (mA)
ID − Drain Current (mA)
9
VGS(off) − Gate-Source Cutoff Voltage (V)
0
−0.2 V
9
−0.4 V
6
−0.6 V
−0.8 V
3
0
0.2
0.4
0.6
VDS − Drain-Source Voltage (V)
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0.8
−0.4 V
18
−0.8 V
−1.2 V
12
−1.6 V
6
−2.0 V
−2.4 V
−1.0 V
0
4
200 mA
10 pA
gfs − Forward Transconductance (mS)
100
−2
−1
200 mA
TA = 125_C
1 nA
0
0
rDS(on) − Drain-Source On-Resistance ( Ω )
10 nA
IG − Gate Leakage
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
80
Gate Leakage Current
50
gfs − Forward Transconductance (mS)
IDSS − Saturation Drain Current (mA)
100
0
1
0
0.2
0.4
0.6
0.8
1
VDS − Drain-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
20
Output Characteristics
50
VGS(off) = −1.5 V
VGS(off) = −3 V
VGS = 0 V
VGS = 0 V
40
−0.2 V
12
ID − Drain Current (mA)
ID − Drain Current (mA)
16
−0.4 V
8
−0.6 V
−0.8 V
4
−0.4 V
30
−0.8 V
−1.2 V
20
−1.6 V
10
−2.0 V
−1.0 V
0
−2.4 V
0
0
4
2
6
8
10
0
2
VDS − Drain-Source Voltage (V)
Transfer Characteristics
30
VGS(off) = −1.5 V
VDS = 10 V
VGS(off) = −3 V
8
10
VDS = 10 V
80
ID − Drain Current (mA)
ID − Drain Current (mA)
6
Transfer Characteristics
100
24
TA = −55_C
18
25_C
12
125_C
6
TA = −55_C
60
25_C
40
125_C
20
0
0
0
−0.4
−0.8
−1.2
−1.6
−2
0
−0.6
VGS − Gate-Source Voltage (V)
24
VDS = 10 V
f = 1 kHz
VGS(off) = −3 V
TA = −55_C
25_C
18
−1.8
−2.4
−3
Transconductance vs. Gate-Source Voltage
50
gfs − Forward Transconductance (mS)
VGS(off) = −1.5 V
−1.2
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
30
gfs − Forward Transconductance (mS)
4
VDS − Drain-Source Voltage (V)
125_C
12
6
0
VDS = 10 V
f = 1 kHz
40
TA = −55_C
30
25_C
20
125_C
10
0
0
−0.4
−0.8
−1.2
−1.6
VGS − Gate-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
−2
0
−0.6
−1.2
−1.8
−2.4
−3
VGS − Gate-Source Voltage (V)
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J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current
VGS(off) = −1.5 V
60
40
VGS(off) = −3 V
Assume VDD = 15 V, VDS = 5 V
RL +
60
VGS(off) = −1.5 V
20
20
VGS(off) = −3 V
0
1
10
15
100
10
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
10
6
VDS = 5 V
3
0
−8
−4
f = 1 MHz
Crss − Reverse Feedback Capacitance (pF)
VDS = 0 V
−12
−16
8
6
VDS = 0 V
4
2
0
−20
VDS = 5 V
0
VGS − Gate-Source Voltage (V)
−8
−4
−12
−16
−20
VGS − Gate-Source Voltage (V)
Input Admittance vs. Frequency
100
1
ID − Drain Current (mA)
12
9
0.1
ID − Drain Current (mA)
f = 1 MHz
Forward Admittance vs. Frequency
100
gig
−gfg
10
(mS)
(mS)
10
big
1
bfg
1
TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate
0.1
TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate
0.1
100
200
500
f − Frequency (MHz)
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10 V
ID
40
0
Ciss − Input Capacitance (pF)
g fs R L
AV + 1 ) R g
L os
80
80
0
Circuit Voltage Gain vs. Drain Current
100
AV − Voltage Gain
rDS(on) − Drain-Source On-Resistance ( Ω )
100
1000
100
200
500
1000
f − Frequency (MHz)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance vs. Frequency
10
Output Admittance vs. Frequency
100
TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate
TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate
10
1
+grg
−grg
0.1
bog
(mS)
(mS)
−brg
gog
1
0.1
0.01
100
200
500
100
1000
200
20
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
150
VGS(off) = −3 V
16
gos − Output Conductance (µS)
en − Noise Voltage nV /
Hz
VDS = 10 V
12
ID = 1 mA
8
ID = 10 mA
4
1000
500
f − Frequency (MHz)
f − Frequency (MHz)
VDS = 10 V
f = 1 kHz
120
90
TA = −55_C
60
25_C
30
125_C
0
0
10
100
1k
f − Frequency (Hz)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
10 k
100 k
0.1
1
10
ID − Drain Current (mA)
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1