SEMICONDUCTOR KGT40N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. B A S J C O FEATURES G ・High speed switching ・High system efficiency H D ・Short Circuit Withstand Times ≻10us E ・Extremely enhanced avalanche capability F P 1 P 2 3 K DIM MILLIMETERS _ 0.30 A 15.90 + _ 0.20 B 5.00 + _ 0.30 C 20.85 + _ 0.20 D 3.00 + _ 0.20 E 2.00 + _ 0.20 F 1.20 + Max. 4.50 M G _ 0.70 H 20.10 + _ 0.02 0.60 + I _ 0.20 J I 14.70 + _ 0.10 K 2.00 + _ 0.20 2.40 + M _ 0.30 O 3.60 + _ 0.30 5.45 + P _ 0.20 Q 3.60 + _ 0.10 R 7.19 + S 1. GATE 2. COLLECTOR 3. EMITTER TO-247 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES ±20 V 80 A 40 A ICM* 120 A IF 40 A IFM 80 A 290 W 116 W Tj 150 ℃ Tstg -55 to + 150 ℃ @Tc=25℃ Collector Current @Tc=100℃ Pulsed Collector Current Diode Continuous Forward Current @Tc=100℃ Diode Maximum Forward Current Maximum Power Dissipation @Tc=25℃ @Tc=100℃ Maximum Junction Temperature Storage Temperature Range IC C G E PD *Repetitive rating : Pulse width limited by max. junction temperature E C G THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.43 ℃/W Thermal Resistance, Junction to Case (DIODE) Rt h JC 1.45 ℃/W Thermal Resistance, Junction to Ambient Rt h JA 40 ℃/W 2011. 8. 30 Revision No : 0 1/7 KGT40N60KDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES Collector Cut-off Current Gate Leakage Current TEST CONDITION MIN. TYP. MAX. UNIT VGE=0V , IC=250㎂ 600 - - V ICES VGE=0V, VCE=600V - - 250 ㎂ IGES VCE=0V, VGE=±20V - - ±100 nA VGE(th) VGE=VCE, IC=250㎂ 4.5 5.5 7.0 V VGE=15V, IC=40A - 1.80 2.20 V VGE=15V, IC=40A, TC = 125℃ - 2.10 - V VGE=15V, IC=80A, TC = 25℃ - 2.45 - V - 170 - nC - 25 - nC Static Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE(sat) Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 80 - nC Turn-On Delay Time td(on) - 50 - ns tr - 40 - ns - 170 - ns - 35 - ns - 0.6 - mJ Rise Time VCC=400V, VGE=15V, IC= 40A td(off) Turn-Off Delay Time tf Fall Time VCC=300V, IC=40A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.4 - mJ Total Switching Loss Ets - 1.0 - mJ Turn-On Delay Time td(on) - 55 - ns tr - 50 - ns - 185 - ns - 75 - ns - 1.2 - mJ Rise Time td(off) Turn-Off Delay Time tf Fall Time VCC=300V, IC=40A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 1.0 - mJ Total Switching Loss Ets - 2.2 - mJ Input Capacitance Cies - 3200 - pF Ouput Capacitance Coes - 200 - pF Reverse Transfer Capacitance Cres - 100 - pF Short Circuit Withstand Time tsc 10 - - μs VCE=30V, VGE=0V, f=1MHz VCC=300V, VGE=15V, TC=100℃ Note 1 : Energy loss include tail current and diode reverse recovery. Marking KGT 40N60KDA 025 2011. 8. 30 1 Device Mark 1 2 Device Mark 2 3 Lot No Revision No : 0 2/7 KGT40N60KDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage MIN. TYP. MAX. TC=25℃ - 1.8 2.3 TC=125℃ - 1.5 - TC=25℃ - 90 - TC=125℃ - 105 - IF = 40A TC=25℃ - 16 - di/dt = -600A/μs TC=125℃ - 29 - TC=25℃ - 730 - TC=125℃ - 1550 - IF = 40A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 2011. 8. 30 TEST CONDITION Irr Qrr Revision No : 0 UNIT V ns A nC 3/7 KGT40N60KDA Fig 2. Saturation Voltage Characteristics Fig 1. Saturation Voltage Characteristics 200 160 140 12V 120 100 80 10V 60 40 0 Collector - Emitter Voltage VCE (V) 0 2 4 6 8 Common Emitter VGE = 15V TC = 25 C TC = 125 C 90 80 70 60 50 40 30 20 10 Common Emitter TC=25 C 20 0 0 10 1 4 Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE 3.5 Common Emitter VGE = 15V IC = 80A 3.0 2.5 IC = 40A 2.0 1.5 100 50 20 Common Emitter TC = 25 C 16 12 8 40A 60A 4 IC = 20A 0 0 150 4 8 12 Fig 5. Saturation Voltage vs. VGE 5000 Common Emitter TC = 125 C 16 Ciss Capacitance (pF) 4000 12 40A 4 60A 4 3500 3000 2500 2000 1500 Coss 1000 Crss 500 0 0 Common Emitter VGE = 0V, f = 1MHZ TC = 25 C 4500 IC = 20A 20 Fig 6. Capacitance Characteristics 20 8 16 Gate - Emitter Voltage VGE (V) Case Temperature TC ( C ) Collector - Emitter Voltage VCE (V) 3 Collector - Emitter Voltage VCE (V) 0 8 12 16 Gate - Emitter Voltage VGE (V) 2011. 8. 30 2 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Collector Current IC (A) 100 15V Collector Current IC (A) 20V 180 Revision No : 0 20 0 1 10 100 Collector - Emitter Voltage VCE (V) 4/7 KGT40N60KDA Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance 1000 tr 100 td(on) Common Emitter VCC = 300V, VGE = 15V IC = 40A TC = 25 C TC = 125 C Switching Time (ns) Switching Time (ns) 1000 10 td(off) 100 Common Emitter VCC = 300V, VGE = 15V IC = 40A TC = 25 C TC = 125 C tf 10 0 10 20 30 40 50 60 0 10 Gate Resistance RG (Ω) 50 60 100 E(on) 1 E(off) Common Emitter VCC = 300V, VGE = 15V IC = 40A TC = 25 C TC = 125 C 0.1 0 10 20 30 40 50 Switching Time (ns) Switching Loss (mJ) 40 Fig 10. Turn-On Characteristics vs. Collector Current 10 td(on) tr Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 10 60 0 10 Fig 11. Turn-Off Characteristics vs. Collector Current 30 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C td(off) 100 tf 10 20 30 40 Collector Current IC (Α) Revision No : 0 50 60 10 E(on) 1 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C E(off) 0.1 10 5 40 Fig 12. Switching Loss vs. Collector Current Switching Loss (mJ) 1000 20 Collector Current IC (Α) Gate Resistance RG (Ω) Switching Time (ns) 30 Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance 2011. 8. 30 20 50 60 0 10 20 30 40 50 60 Collector Current IC (Α) 5/7 KGT40N60KDA Fig 13. Gate Charge Characteristics Fig 14. SOA Characteristics 1000 18 Common Emitter IC = 40Α 16 TC = 25 C 14 600V Vcc = 200V 12 Collector Current IC (A) Gate-Emitter Voitage VGE (V) 20 400V 10 8 6 4 2 50 100 150 200 10 50µs 200µs 250 1ms 10ms DC Operation 1 Single nonrepetitive pulse 0.1 Tc= 25 C 0.01 0.1 0 0 100 Curves must be derated linearly with increase in temperature 10 1 100 1000 10000 Collector-Emitter Voltage VCE (V) Gate Charge Qg (nC) Fig 15. Turn-Off SOA Collector Current IC (A) 1000 100 10 1 Turn-Off Safe Operating Area VGE = 15V, TC =125 C 1 10 100 1000 Collector-Emitter Voltage VCE (V) Fig 16. Transient Thermal Impedance of IGBT Duty=0.5 0.1 0.2 0.1 5 0.0 2 PDM 0.01 0.0 1 t1 0.0 Thermal Resistance (Zthjc) 1 t2 1. Duty factor D=t1/t2 2. Peak Tj = Pdm Zthjc + TC Single Pluse 0.001 1E-5 1E-4 1E-3 1E-2 1E-1 1E+00 1E+01 Rectangular Pulse Duration (sec) 2011. 8. 30 Revision No : 0 6/7 KGT40N60KDA Fig 17. Forward Characteristics Reverse Recovery Current IRRM (A) Fig 18. Reverse Recovery Current Forward Current IF (A) 1000 100 TC = 125 C 10 TC = 25 C 1 0.1 0 1 2 3 4 Forward Voltage VF (V) 35 di/dt=600A/µs 30 25 20 15 10 di/dt=400A/µs 5 25 C 125C 0 0 20 40 60 80 100 Forward Current IF (A) Fig 19. Reverse Recovery Time Reverse Recovery Time trr (ns) 140 120 di/dt=400A/µs 100 80 60 di/dt=600A/µs 40 20 25 C 125C 0 0 20 40 60 80 100 Forward Current IF (A) 2011. 8. 30 Revision No : 0 7/7