SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. E B FEATURES L D L 2 3 G H A VDSS=60V, ID=2A Drain-Source ON Resistance 1 RDS(ON)=160m (Max.) @ VGS=10V RDS(ON)=220m (Max.) @ VGS=4.5V P P K J N C Super High Dense Cell Design MAXIMUM RATING (Ta=25 SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS DC@Ta=25 ID DC@Ta=70 20 M 1.6 IDP 10 Drain-Source-Diode Forward Current IS 1.0 Ta=25 PD Ta=70 A A KND 1.25 W 0.8 Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA 100 Maximum Junction Temperature V 2.0 Pulsed Drain Power Dissipation MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 ) CHARACTERISTIC Drain Current DIM A B C D E G H J K L M N P /W Note>*Surface Mounted on 1” × 1” FR4 Board, t≤5sec PIN CONNECTION (TOP VIEW) D 3 3 2008. 2. 25 2 1 G S 2 Revision No : 1 1 1/5 KMB2D0N60SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 60 - - V VGS=0V, VDS=60V - - 0.5 VGS=0V, VDS=60V, Tj=55 - - 10 - - 100 nA 1.5 - - V VGS=10V, ID=2A - 125 160 VGS=4.5V, ID=1.7A - 155 220 VGS=10V, VDS 4.5V 6 - - VGS=4.5V, VDS 4.5V 4 - - - 4.6 - - 240 - - 30 - Static Drain-Source Breakdown Voltage BVDSS IDS=250 A, VGS=0V, IDSS Drain Cut-off Current A Gate Leakage Current IGSS VGS= Gate Threshold Voltage Vth VDS=VGS, ID=250 A 20V, VDS=0V RDS(ON)* Drain-Source ON Resistance ID(ON)* On-State Drain Current gfs* Forward Transconductance m A VDS=4.5V, ID=2.0A S Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 16 - Total Gate Charge Qg* - 4.8 10 Gate-Source Charge Qgs* - 0.8 - Gate-Drain Charge Qgd* - 1.0 - Turn-On Delat Time td(on)* - 7 15 Turn-On Rise Time tr* VDD=30V, VGS=4.5V - 10 20 ID=1A, RG=6 - 17 35 - 6 15 - 0.77 1.2 td(off)* Turn-Off Deley Time VDS=30V, f=1MHz, VGS=0V VDS=30V, VGS=10V, ID=2A tf* Turn-Off Fall Time pF nC ns Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage NOTE 1> * Pulse Test : Pulse width <300 2008. 2. 25 VGS=0V, IS=1A V , Duty cycle < 2% Revision No : 1 2/5 Fig1. ID - VDS Drain Current ID (A) 10 Common Source Ta=25 C Pulse Test 5.0V 10V 8 4.5V 6 4 4.0V 2 3.5V VGS=3V 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (mΩ) KMB2D0N60SA Fig2. RDS(ON) - ID 500 Common Source Ta=25 C Pulse Test 400 300 VGS=4.5V 200 VGS=10V 100 0 0 Fig3. ID - VGS 6 4 25 C 125 C -55 C 0 1 2 3 4 5 Drain-Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) VDS=5V Pulse Test 0 250 Common Source VGS=10V, ID=2A Pulse Test 200 150 100 50 0 -75 Gate-Source Volatage VGS (V) -50 -25 Drain Current IS (A) Gate Threshold Voltage Vth (V) 3 2 1 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2008. 2. 25 50 10 VGS=VDS ID=250µA 4 Pulse Test -25 25 75 100 125 150 Fig6. IS-VSDF 5 Common Source -50 0 Junction Temperature Tj ( C ) Fig5. Vth - Tj 0 -75 16 Fig4. RDS(ON) - Tj 10 Common Source 2 12 Drain - Current ID (A) Drain - Source Voltage VDS (V) 8 8 4 Revision No : 1 Common Source Ta=25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/5 KMB2D0N60SA Fig7. VGS - Qg Fig8. C - VDS 400 VDS=30V ID=2.0A VGS=0V f = 1MHz 8 Capacitance C (pF) Gate - Source Voltage VGS (V) 10 6 4 2 300 200 Ciss 100 Coss 0 Crss 0 0 1 2 3 4 5 0 6 12 18 24 30 Drain - Source Voltage VDS (V) Total Gate - Charge Qg (nC) Fig9. Safe Operation Area Drain Current ID (A) 100.0 10.0 RDS(ON) Limited 100µs 1ms 1.0 10ms 100ms 1s 0.1 VGS= 10V SINGLE PULSE Ta= 25 C 0.01 0.1 DC 1 10 100 Drain - Source Voltage VDS (V) NORMALIZED TRANSIENT THERMAL RESISTANCE Fig10. Transient Thermal Response Curve 1 D = 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 t2 - Duty = t/T Single pulse 0.01 10-4 10-3 10-2 10-1 100 10 102 500 TIME t (sec) 2008. 2. 25 Revision No : 1 4/5 KMB2D0N60SA Fig11. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig12. Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2008. 2. 25 Revision No : 1 td(off) tf toff 5/5