IC
IC
SMD Type
HEXFET Power MOSFET
KRF7220
Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter
Drain- Source Voltage
Symbol
Rating
Unit
VDS
-14
V
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
11
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
8.8
Pulsed Drain Current *1
IDM
88
A
Power Dissipation
@Ta= 25
PD
2.5
W
Power Dissipation
@Ta = 70
PD
1.6
W
Linear Derating Factor
0.02
Single Pulse Avalanche Energy *4
EAS
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *3
TJ, TSTG
R
JA
110
12
W/
mJ
V
-55 to + 150
50
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*3 Surface mounted on FR-4 board, t
10sec.
*4 Starting TJ = 25 , L = 1.8mH,RG = 25 , IAS = 11A
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IC
IC
SMD Type
KRF7220
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
VGS = 0V, ID = -5mA
Min
V/
0.0082 0.012
VGS = -2.5V, ID = -8.8A*1
0.0125 0.02
gfs
VDS = -10V, ID = -11A*1
8.4
V
S
VDS = -11.2V, VGS = 0V
-5.0
VDS = -11.2V, VGS = 0V, TJ = 70
-100
VGS = -12V
-100
VGS = 12V
100
Total Gate Charge
Qg
ID = -11A
84
125
Gate-to-Source Charge
Qgs
VDS = -10V
13
20
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -5.0V,*1
37
55
Turn-On Delay Time
td(on)
VDD = -10V
19
tr
ID = -11A
420
td(off)
RG = 6.2
140
tf
RD = 0.91
Rise Time
Turn-Off Delay Time
Fall Time
*1
Input Capacitance
Ciss
VGS = 0V
8075
Coss
VDS = -10V
4400
Reverse Transfer Capacitance
Crss
f = 1.0MHz
4150
Body Diode)
A
nA
nC
ns
1040
Output Capacitance
Continuous Source Current
Unit
V
VGS = -4.5V, ID = -11A*1
-0.6
IGSS
Max
-0.006
TJ ID = -1mA,Reference to 25
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Typ
-14
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
pF
IS
-2.5
ISM
-88
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
TJ = 25 , IS = -2.5A, VGS = 0V*1
V
ns
Reverse Recovery Time
trr
TJ = 25 , IF =-2.5A
160
240
Reverse RecoveryCharge
Qrr
di/dt = 100A/
147
220
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
-1.2
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