KSC5338F KSC5338F High Voltage Power Switch Switching Application • High Speed Switching • Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1000 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 450 V 9 IC Collector Current (DC) 5 V A ICP Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP Base Current (Pulse) 4 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 1000 450 BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB =0 BVEBO Emitter-Base Breakdown Voltage IC=1mA, IE=0 ICBO Collector Cut-off Current VCB = 800V, VBE = 0 IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 0.5A VCE = 1V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A IC = 2A, IB = 0.4A VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.1A IC = 2A, IB = 0.4A Cob Output Capacitance VCB = 10V, f =1MHz Cib Input Capacitance VEB=8V, IC=0, f =1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = -0.2A RL=125Ω tON Turn ON Time tSTG Storage Time tF Fall Time Typ. Max. Units V V 9 V 15 6 10 µA 10 µA 30 0.55 0.8 0.5 V V 1.1 1.25 V V 70 pF 1000 pF 14 MHz 200 ns 2 µs 500 ns * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338F Typical Characteristics 5 100 IB=900mA V CE = 5V 3 IB = 800mA IB = 700mA IB = 600mA IB = 500mA IB = 400mA IB = 300mA 2 IB = 100mA 4 IB = 200mA 1 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 1A IB = 0 0 0 2 4 6 8 10 1 0.1 0.01 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 hFE, DC CURRENT GAIN VCE = 1V 10 1 0.1 1 10 10 10 IC = 10IB 1 0.1 0.01 0.01 V BE(sat) VCE(sat) 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collect-Emitter Saturation Voltage 10 10 1 tSTG, tF [µs], TIME VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 0.1 0.01 0.1 IC[A], COLLECTOR CURRENT V BE(sat) VCE (sat) 0.1 tSTG 1 tF 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ©2000 Fairchild Semiconductor International 0.1 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 6. Switching Time Rev. A, February 2000 KSC5338F Typical Characteristics (Continued) 100 80 10 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT TJ=150℃ 50υ s DC 1ms 1 5ms 0.1 0.01 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSC5338F Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E