KEC KTC3770F

SEMICONDUCTOR
KTC3770F
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
E
・Low Noise Figure, High Gain.
B
D
G
2
3
K
A
・NF=1.1dB, |S21e|2=11dB (f=1GHz).
MAXIMUM RATING (Ta=25℃)
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
3
V
Collector Current
IC
100
mA
Collector Power Dissipation
PC
50
mW
Junction Temperature
Tj
150
℃
Tstg
-55～150
℃
MILLIMETERS
_ 0.05
0.6 +
_ 0.05
0.8 +
0.38+0.02/-0.04
_ 0.05
0.2 +
_ 0.05
1.0 +
_ 0.05
0.35+
_ 0.05
0.1 +
_ 0.05
0.15 +
J
C
CHARACTERISTIC
1
DIM
A
B
C
D
E
G
J
K
1. EMITTER
2. BASE
Storage Temperature Range
3. COLLECTOR
TFSM
Marking
Type Name
h FE Rank
7
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=10V, IE=0
-
-
1
μA
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
-
1
μA
50
-
250
-
-
1.0
pF
-
0.65
1.15
pF
5
7
-
GHz
hFE (Note1)
DC Current Gain
Collector Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
Transition Frequency
fT
VCE=10V, IC=20mA
VCB=10V, IE=0, f=1MHz (Note2)
VCE=10V, IC=20mA
Insertion Gain
|S21e|
VCE=10V, IC=20mA, f=1GHz
7.5
11.5
-
dB
Noise Figure
NF
VCE=10V, IC=7mA, f=1GHz
-
1.1
2
dB
2
Note 1 : hFE Classification
A:50~100, B:80~160, C:125~250.
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
2005. 4. 7
Revision No : 0
1/5
KTC3770F
Pc - Ta
300
200
100
0
0
50
100
150
OUTPUT CAPACITANCE Cob (pF)
REVERSE TRANSFER CAPACITANCE C re (pF)
COLLECTOR POWER DISSIPATION P C (mW)
TYPICAL CHARACTERISTICS (Ta=25 C)
C ob , C re - VCB
5
f=1MHz
Ta=25 C
3
1
C ob
0.5
C re
0.3
0.1
0.1
0.3
h FE - I C
3
5
10
- IC
(dB)
15
VCE =10V
INSERTION GAIN S 2le
2
300
100
50
30
10
0.5
10
5
VCE =10V
f=1.0GHz
0
1
3
10
30
1
100
COLLECTOR CURRENT I C (mA)
3
5
10
30
50
100
COLLECTOR CURRENT I C (mA)
f T - IC
S 2le
10
2
- f
30
VCE =10V
I C =20mA
2
(dB)
VCE =10V
INSERTION GAIN S 2le
TRANSITION FREQUENCY f T (GHz)
2
S 2le
500
5
3
20
S 2le
2
10
0
1
1
3
5
10
30
50
COLLECTOR CURRENT I C (mA)
2005. 4. 7
1
COLLECTOR-BASE VOLTAGE VCB (V)
AMBIENT TEMPERATURE Ta ( C)
DC CURRENT GAIN h FE
0.5
Revision No : 0
100
0.1
0.3
0.5
1
3
FREQUENCY f (GHz)
2/5
KTC3770F
NF - I C
S 2le
5
- VCE
15
(dB)
VCE =10V
f=1.0GHz
12
INSERTION GAIN S 2le
2
4
NOISE FIGURE NF (dB)
2
3
2
1
9
6
3
f=1.0GHz
I C =20mA
0
0
0.5
1
3
10
30
0
100
COLLECTOR CURRENT I C (mA)
2
4
6
8
10
COLLECTOR-EMITTER VOLTGE VCE (V)
S-PARAMETER
(VCE=10V, IC=5mA, ZO=50Ω)
f (MHz)
|S11|
∠S11
|S21|
∠S21
|S12|
∠S12
|S22|
∠S22
200
0.651
-69.3
10.616
129.3
0.051
59.2
0.735
-28.1
400
0.467
-113.3
6.856
104.4
0.071
54.4
0.550
-34.1
600
0.391
-139.3
4.852
90.9
0.086
56.0
0.468
-33.9
800
0.360
-159.2
3.802
81.2
0.101
59.1
0.426
-33.6
1000
0.360
-176.9
3.098
72.9
0.118
61.0
0.397
-35.7
1200
0.361
172.7
2.646
67.3
0.137
63.5
0.373
-38.3
1400
0.381
160.3
2.298
59.3
0.157
63.3
0.360
-43.0
1600
0.398
152.2
2.071
55.2
0.180
64.1
0.337
-45.9
1800
0.423
143.3
1.836
49.0
0.203
63.7
0.320
-52.3
2000
0.445
137.6
1.689
46.2
0.220
64.7
0.302
-52.2
(VCE=10V, IC=20mA, ZO=50Ω)
f (MHz)
|S11|
∠S11
|S21|
∠S21
|S12|
∠S12
|S22|
∠S22
200
0.339
-107.0
16.516
108.7
0.035
66.1
0.459
-36.6
400
0.258
-147.3
8.928
92.1
0.060
71.0
0.343
-32.9
600
0.243
-167.7
6.022
83.0
0.085
71.9
0.305
-29.9
800
0.242
177.0
4.633
76.2
0.109
72.2
0.284
-29.4
1000
0.260
164.5
3.744
69.9
0.136
70.4
0.266
-31.7
1200
0.269
157.6
3.193
65.7
0.160
69.9
0.246
-35.0
1400
0.294
148.7
2.750
58.8
0.187
66.7
0.233
-40.4
1600
0.314
143.1
2.479
55.5
0.212
65.2
0.208
-43.6
1800
0.343
136.5
2.185
50.1
0.238
62.4
0.190
-50.5
2000
0.367
131.4
2.016
47.8
0.254
61.6
0.173
-48.3
2005. 4. 7
Revision No : 0
3/5
KTC3770F
S11e
VCE =10V
I C =5mA
Ta=25 C
(UNIT : Ω)
S12e
VCE =10V
I C =5mA
Ta=25 C
j50
90
10
60
120
j25
8
j100
f=0.2GHz
j150
6
1.0
150
30
4
2.0
j10
0.8
j250
1.6
0
10
1.2
2
25
50
100
250
_ 180
+
0.8
-j10
10
8
6
4
1.2
1.6
2.0
0
0
2
-j250
0.4
-j150
-30
-150
f=0.2GHz
-j25
-j100
-60
-120
-j50
S21e
VCE =10V
I C =5mA
Ta=25 C
-90
S22e
VCE =10V
I C =5mA
Ta=25 C
(UNIT : Ω)
90
120
0.25
60
2.0
0.20
0.10
0.05
_ 180
+
0
j25
j100
1.6
0.15
150
j50
j150
30
1.2
0.05
0.10
j250
j10
0.8
0.4
f=0.2GHz
0.15
0.20
0
0.25
0
10
25
50
100
1.6
-j10
2.0
0.8
1.2
0.4
f=0.2GHz
-30
-150
-j250
-j150
-j25
-j100
-60
-120
-90
2005. 4. 7
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Revision No : 0
-j50
4/5
KTC3770F
S11e
VCE =10V
I C =20mA
Ta=25 C
(UNIT : Ω)
S12e
VCE =10V
I C =20mA
Ta=25 C
j50
90
20
16
f=0.2GHz
j100
j25
12
j150
8
0
j250
2.0
1.6
1.2
10
25
2
50
100
30
150
0.4
j10
60
120
250
_ 180
+
10
8
6
4
0.8
1.2
1.6
2.0
0
0
2
0.4
-j10
-j250
f=0.2GHz
-j150
-j25
-30
-150
-j100
-60
-120
-j50
S21e
VCE =10V
I C =20mA
Ta=25 C
-90
S22e
VCE =10V
I C =20mA
Ta=25 C
(UNIT : Ω)
90
0.25
60
120
2.0
1.6
0.20
0.15
j25
1.2
150
j50
j100
j150
30
0.10
0.8
0.05
0.4
f=0.2GHz
j10
_ 180
+
0
0.05
0.10
0.15
0.20
0
0.25
0
j250
10
25
50
100
1.2
1.6
2.0
0.4
f=0.2GHz
-j10
-j250
-30
-150
-j150
-j25
-j100
-60
-120
-90
2005. 4. 7
250
0.8
Revision No : 0
-j50
5/5