SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222AE. C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + H J 0.50 _ 0.05 0.13 + C J 1. EMITTER MAXIMUM RATING (Ta=25 ) CHARACTERISTIC 2. BASE SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Power Dissipation (Ta=25 ) PC 100 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 3. COLLECTOR ESM Marking ZH 2004. 1. 29 Revision No : 0 1/4 KTN2907AE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-0.5V - - -50 nA Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -10 nA V(BR)CBO IC=-10 A, IE=0 -60 - - V V(BR)CEO IC=-10mA, IB=0 -60 - - V V(BR)EBO IE=-10 A, IC=0 -5 - - V hFE(1) IC=-0.1mA, VCE=-10V 75 - - hFE(2) IC=-1.0mA, VCE=-10V 100 - - hFE(3) IC=-10mA, VCE=-10V 100 - - hFE(4) IC=-150mA, VCE=-10V 100 - 300 hFE(5) IC=-500mA, VCE=-10V 50 - - VCE(sat)1 IC=-150mA, IB=-15mA - - -0.4 VCE(sat)2 IC=-500mA, IB=-50mA - - -1.6 VBE(sat)1 IC=-150mA, IB=-15mA - - -1.3 VBE(sat)2 IC=-500mA, IB=-50mA - - -2.6 200 - - MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * fT Transition Frequency VCE=-20V, IC=-50mA, f=100MHz V V Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 8 pF Input Capacitance Cib VBE=-2V, IC=0, f=1.0MHz - - 30 pF Delay Time td VCC=-30V, IC=-150mA - - 10 Switching Rise Time tr IB1=-15mA - - 40 Time Storage Time tstg VCC=-6V, IC=-150mA - - 80 Fall Time tf IB1=-IB2=-15mA - - 30 nS * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2004. 1. 29 Revision No : 0 2/4 KTN2907AE -1000 h FE - I C 1K COMMON EMITTER Ta=25 C -800 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - VCE I B =-40mA I B =-30mA I B =-20mA -600 I B =-10mA -400 I B =-5mA -200 0 -0.4 -0.8 -1.2 -1.6 VCE =-10V 500 300 Ta=75 C Ta=25 C Ta=-25 C 100 50 30 10 -0.5 -1.8 -1 -3 -10 -0.6 -0.4 VCE(sat) COLLECTOR CURRENT I C (mA) -500 -300 -3 -10 -30 -100 -300 COMMON EMITTER -1.4 I C /IB =10 -1.2 VBE(sat) -1.0 Ta=-25 C -0.8 Ta=25 C -0.6 Ta=75 C -0.4 -0.2 0 -0.5 -1 -1K -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) I C - V BE f T - IC COMMON EMITTER VCE =-10V -100 -30 Ta=75 C Ta= 25 C -10 -3 Ta=-25 C -1 -0.3 1000 Ta=25 C VCE =10V 100 10 1 -0.1 -0.05 -0.2 -0.3 -3 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) 0 -0.5 -1 -1K -1.6 COMMON EMITTER I C /I B =10 -0.2 -300 V BE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C -0.8 -100 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -1.0 -30 10 100 1K 3K COLLECTOR CURRENT I C (mA) -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 BASE-EMITTER VOLTAGE VBE (V) 2004. 1. 29 Revision No : 0 3/4 2004. 1. 29 Cob - VCB Cib - VEB 100 P C - Ta COMMON EMITTER f=1MHz, Ta=25 C 30 Cib 10 Cob 3.0 1.0 -0.1 -1.0 -10 -100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) Revision No : 0 -300 COLLECTOR POWER DISSIPATION P C (mW) COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) KTN2907AE 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 4/4