L6114 L6115 QUAD 100 V, DMOS SWITCH .. .. .. OUTPUT VOLTAGE TO 100 V 0.7 Ω RDS(ON) SUPPLY VOLTAGE UP TO 60 V LOW INPUT CURRENT TTL/CMOS COMPATIBLE INPUTS HIGH SWITCHING FREQUENCY (200 KHz) MULTIPOWER BCD TECHNOLOGY Powerdip 14 + 3 + 3 DESCRIPTION Realized with the Multipower-BCD mixed bipolar/CMOS/DMOS process, the L6114/15 monolithic quad DMOS switch is designed for high current, high voltage switching applications. Each of the four switches is controlled by a logic input and all four are controlled by a common enable input. All inputs are TTL/CMOS compatible for direct connection to logic circuits. Each source is available for the insertion of the sense resistors in current control applications. Two versions are available : the L6114 mounted in a Powerdip 14+3+3 package and the L6115 in a 15lead Multiwatt package. Multiwatt-15 ORDERING NUMBERS : L6114 (Powerdip) L6115 (Multiwatt-15) PIN CONNECTIONS (top view) L6115 (Multiwatt-15) L6114 (Powerdip) April 1993 1/11 L6114 - L6115 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage VCC Supply Voltage ID IDM (*) ISD @<0>Tpins = 90 °C @<0>Tcase = 90 °C Continuous Drain Current Pulsed Drain Current @<0>Tpins = 90 °C @<0>Tcase = 90 °C Continuous Source-drain Diode Current Value Unit 100 V 60 V Powerdip Multiwatt –15 1.5 3 A A Powerdip Multiwatt –15 5 8 A A Powerdip Multiwatt –15 1.5 3 A A Powerdip Multiwatt –15 5 8 A A 7 V V ISDM Pulsed Source Drain Diode Current VIN Input Voltage VEN Enable Voltage 7 VS Source Voltage – 1 to + 4 V Ptot Total Power Dissipation 4.3 20 1.3 2.3 W W W W – 40 to + 150 °C Tstg, Tj @ @ @ @ Tpins = 90 °C Tcase = 90 °C Tamb = 70 °C Tamb = 70 °C Powerdip Multiwatt –15 Powerdip Multiwatt –15 Storage and Junction Temperature Range (*) Pulse width ≤ 300 µs, duty cycle ≤ 10 %. Note : ID, IDM, ISD, ISDM are given per channel. THERMAL DATA Symbol Parameter Powerdip Multiwatt–15 Unit Rth j-pins Thermal Resistance Junction-pins Max. 14 - o Rth j-case Thermal Resistance Junction-case Max. - 3 o C/W Rth j-amb Thermal Resistance Junction-ambient Max. 65 35 o C/W 2/11 C/W L6114 - L6115 ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified) Symbol Parameter Test Conditions VCC Supply Voltage ICC Supply Current All VIN = H VEN = Square Wave (200kHz, 50 % DC) IQ Quiescent Current VEN = L Drain Source Breakdown Voltage ID = 1mA, VEN = L Output Leakage Current VEN = L VDS = 100V VDS = 80V, Tj = 125°C BVDSS IDSS RDS (on) (*) Static Drain-source on Resistance Min. Typ. 14 Max. 48 9 2 Unit V mA 3 100 mA V mA 1 1 VCC ≥ 14V, ID = 1.5A VEN, VIN = H Ω 0.7 VIN L, VEN L Input Low Voltage – 0.3 0.8 V VIN H, VEN H Input High Voltage 2 7 V IIN L, IEN L Input Low Current VIN, VEN = L – 100 µA IIN H, IEN H Input High Current VIN, VEN = H 10 µA td (on) tr td (off) tf VSD (*) VSD (on) (*) Turn on Delay Time Rise Time Turn off Delay Time ID = 1.5A See Test Circuit and Waveforms Fall Time 300 ns 100 ns 400 ns 100 ns Source Drain Diode Forward Voltage ISD = 1.5A, VEN = L 1.5 V Source Drain Forward Voltage ISD = 1.5A - VIN, VEN = H 1.2 V (*) Pulse test : pulse width = 300 µs, duty cycle = 2 %. 3/11 L6114 - L6115 SWITCHING TIMES RESISTIVE LOAD Figure 1 : Test Circuit (Pins x = Powerdip ; Pins (x) = Multiwatt). Figure 2 : Waveforms. a) 4/11 b) L6114 - L6115 TEST CIRCUIT (Pins x = Powerdip ; Pins (x) = Multiwatt) Figure 3 : Quiescent Current and Output Leakage Current.. Figure 4 : Supply Current. VIN = 2 V VEN = 0.8 V VEN = square wave Figure 5 : RDS (on). VCC = 14 V, VIN = 2 V, f = 3 KHz ID = square wave, (*) VDS is taken during the time in which the VDS ID = 1.5 A RDS = ISD square wave, 1.5 f = 3 KHz VIN = 2 V, { f = 200 KHz DC = 50 % Figure 6 : Source-drain Diode Forward Voltage. VEN = 2V DC = 2 % DC = 2 % - Set VEN = 0.8 V for VSD (taken during the time in which ISD = 1.5 A) - Set VEN = 2 V for VSD (on) (taken during the time in which ISD = 1.5 A) 5/11 L6114 - L6115 Figure 7 : Input Logic Levels Set Set Set Set V = 0.8 V V = 0.8 V V= 2V V= 2V Figure 8 : Static Drain-source on Resistance. 6/11 S1,S2 open S1,S2 close S1,S2 open S1,S2 close for for for for IIN L and IEN L VIN L and VEN H IIN H and IEN H VIN H and VEN H Figure 9 : Normalized Break-down Voltage vs. Temperature. L6114 - L6115 Figure 10 : Normalized on Resistance vs. Temperature. Figure 11 : Typical Source-drain Diode Forward Voltage. Figure 12 : Rth j-amb vs. Dissipated Power(Multiwatt). (*) Rth ≈ 9 °C/W. 7/11 L6114 - L6115 Figure 13 : Transient Thermal Resistance for Single Pulses (Multiwatt). Figure 14 : Peak Transient Thermal Resistance vs.Pulse width and duty cycle (Multiwatt). 8/11 L6114 - L6115 POWERDIP20 PACKAGE MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.85 b b1 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.40 0.033 0.50 0.38 0.020 0.50 D 0.055 0.015 0.020 24.80 0.976 E 8.80 0.346 e 2.54 0.100 e3 22.86 0.900 F 7.10 0.280 I 5.10 0.201 L Z 3.30 0.130 1.27 0.050 9/11 L6114 - L6115 MULTIWATT15 PACKAGE MECHANICAL DATA DIM. mm MIN. TYP. A MAX. 5 B C 2.65 1.6 MIN. TYP. MAX. 0.197 0.104 0.063 D E 0.49 1 0.55 0.019 0.022 F G 0.66 1.14 1.27 0.75 1.4 0.026 0.045 0.050 0.030 0.055 G1 17.57 17.78 17.91 0.692 0.700 0.705 H1 19.6 0.039 0.772 H2 10/11 inch 20.2 0.795 L 22.1 22.6 0.870 L1 22 22.5 0.866 0.890 0.886 L2 17.65 18.1 0.695 0.713 L3 L4 17.25 10.3 17.5 10.7 17.75 10.9 0.679 0.406 0.689 0.421 0.699 0.429 L7 M 2.65 4.2 4.3 2.9 4.6 0.104 0.165 0.169 0.114 0.181 M1 4.5 5.08 5.3 0.177 0.200 0.209 S 1.9 2.6 0.075 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 L6114 - L6115 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT® is a Registered Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 11/11 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.