TI LMZ31710RVQR

LMZ31710
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SNVS987A – JULY 2013 – REVISED JULY 2013
10A SIMPLE SWITCHER® Power Module with 2.95V-17V Input and Current Sharing
in QFN Package
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FEATURES
DESCRIPTION
•
The LMZ31710 SIMPLE SWITCHER power module
is an easy-to-use integrated power solution that
combines a 10-A DC/DC converter with power
MOSFETs, a shielded inductor, and passives into a
low profile, QFN package. This total power solution
allows as few as three external components and
eliminates the loop compensation and magnetics part
selection process.
1
2
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•
•
•
•
•
•
•
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•
Complete Integrated Power Solution Allows
Small Footprint, Low-Profile Design
10mm x 10mm x 4.3mm Package
- Pin Compatible with LMZ31707 & LMZ31704
Efficiencies Up to 95%
Eco-Mode / Light Load Efficiency (LLE)
Wide-Output Voltage Adjust
0.6 V to 5.5 V, with 1% Reference Accuracy
Supports Parallel Operation for Higher Current
Optional Split Power Rail allows
Input Voltage Down to 2.95 V
Adjustable Switching Frequency
(200 kHz to 1.2 MHz)
Synchronizes to an External Clock
Provides 180° Out-of-Phase Clock Signal
Adjustable Slow-Start
Output Voltage Sequencing / Tracking
Power Good Output
Programmable Undervoltage Lockout (UVLO)
Over-Current & Over-Temperature Protection
Pre-bias Output Start-up
Operating Temperature Range: –40°C to 85°C
Enhanced Thermal Performance: 13.3°C/W
Meets EN55022 Class B Emissions
- Integrated Shielded Inductor
APPLICATIONS
•
•
•
•
The 10x10x4.3 mm QFN package is easy to solder
onto a printed circuit board and allows a compact
point-of-load design. Achieves greater than 95%
efficiency and excellent power dissipation capability
with a thermal impedance of 13.3°C/W. The
LMZ31710 offers the flexibility and the feature-set of
a discrete point-of-load design and is ideal for
powering a wide range of ICs and systems.
Advanced packaging technology affords a robust and
reliable power solution compatible with standard QFN
mounting and testing techniques.
Figure 1. SIMPLIFIED APPLICATION
VIN
CIN
PVIN
VIN
ISHARE
VOUT
VOUT
SENSE+
COUT
LMZ31710
SYNC_OUT
PWRGD
INH/UVLO
Broadband & Communications Infrastructure
Automated Test and Medical Equipment
Compact PCI / PCI Express / PXI Express
DSP and FPGA Point-of-Load Applications
VADJ
SS/TR
RT/CLK
STSEL
AGND PGND
RSET
RRT
100
95
90
Efficiency (%)
85
80
75
Vout = 2.5 V
Fsw = 750 kHz
70
65
PVIN = 3.3 V, VIN = 5 V
60
PVIN = VIN = 5 V
55
PVIN = VIN = 12 V
50
0
1
2
3
4
5
6
7
8
9
Output Current (A)
10
C001
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
LMZ31710
SNVS987A – JULY 2013 – REVISED JULY 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS (1)
over operating temperature range (unless otherwise noted)
Input Voltage
Output Voltage
MIN
MAX
VIN, PVIN
–0.3
20
V
INH/UVLO, PWRGD, RT/CLK, SENSE+
–0.3
6
V
ILIM, VADJ, SS/TR, STSEL, SYNC_OUT, ISHARE, OCP_SEL
–0.3
3
V
PH
–1.0
20
V
PH 10ns Transient
–3.0
20
V
VOUT
–0.3
6
V
±100
µA
PH
current limit
A
PH
current limit
A
PVIN
current limit
A
RT/CLK, INH/UVLO
Source Current
Sink Current
PWRGD
UNIT
–0.1
2
mA
Operating Junction Temperature
–40
125 (2)
°C
Storage Temperature
–65
150
°C
1500
G
Mechanical Shock
Mil-STD-883D, Method 2002.3, 1 msec, 1/2 sine, mounted
Mechanical Vibration
Mil-STD-883D, Method 2007.2, 20-2000Hz
(1)
20
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
See the temperature derating curves in the Typical Characteristics section for thermal information.
(2)
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
PVIN
Input Switching Voltage
2.95
17
V
VIN
Input Bias Voltage
4.5
17
V
VOUT
Output Voltage
0.6
5.5
V
fSW
Switching Frequency
200
1200
kHz
PACKAGE SPECIFICATIONS
LMZ31710
Weight
Flammability
MTBF Calculated reliability
UNIT
1.45 grams
Meets UL 94 V-O
Per Bellcore TR-332, 50% stress, TA = 40°C, ground benign
37.4 MHrs
Table 1. ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum at the end of this datasheet, or see
the TI website at www.ti.com.
2
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ELECTRICAL CHARACTERISTICS
Over –40°C to 85°C free-air temperature, PVIN = VIN = 12 V, VOUT = 1.8 V, IOUT = 10 A,
CIN = 0.1 µF + 2 x 22 µF ceramic + 100 µF bulk, COUT = 4 x 47 µF ceramic (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IOUT
Output current
TA = 85°C, natural convection
0 (1)
10
A
VIN
Input bias voltage range
Over output current range
4.5
17
V
PVIN
Input switching voltage range
Over output current range
2.95 (2)
17 (3)
V
UVLO
VIN Undervoltage lockout
VOUT(adj)
VOUT
VIN Increasing
VIN Decreasing
3.5
Output voltage adjust range
Over output current range
0.6
Set-point voltage tolerance
TA = 25°C, IOUT = 0 A
Temperature variation
–40°C ≤ TA ≤ +85°C, IOUT = 0 A
±0.2%
Line regulation
Over input voltage range
±0.1%
Load regulation
Over output current range
±0.2%
Total output voltage variation
Includes set-point, line, load, and temperature variation
PVIN = VIN = 12 V
IO = 5 A
η
Efficiency
PVIN = VIN = 5 V
IO = 5 A
Output voltage ripple
ILIM
Current limit threshold
Transient response
VINH
Inhibit threshold voltage
IINH
II(stby)
4.0
V
±1.5% (4)
VOUT = 5.0 V, fSW = 1 MHz
93 %
VOUT = 3.3 V, fSW = 750 kHz
92 %
VOUT = 2.5 V, fSW = 750 kHz
90 %
VOUT = 1.8 V, fSW = 500 kHz
89 %
VOUT = 1.2 V, fSW = 300 kHz
86 %
VOUT = 0.9 V, fSW = 250 kHz
84 %
VOUT = 0.6 V, fSW = 200 kHz
81 %
VOUT = 3.3 V, fSW = 750 kHz
94 %
VOUT = 2.5 V, fSW = 750 kHz
93 %
VOUT = 1.8 V, fSW = 500 kHz
92 %
VOUT = 1.2 V, fSW = 300 kHz
89 %
VOUT = 0.9 V, fSW = 250 kHz
87 %
VOUT = 0.6 V, fSW = 200 kHz
83 %
14
mVP-P
ILIM pin open
15
A
ILIM pin to AGND
12
A
100
µs
1.0 A/µs load step from
25 to 75% IOUT(max)
Recovery time
VOUT over/undershoot
80
mV
Inhibit High Voltage
1.3
open (5)
Inhibit Low Voltage
-0.3
1.1
INH Input current
VINH < 1.1 V
-1.15
INH Hysteresis current
VINH > 1.3 V
-3.3
Input standby current
INH pin to AGND
PWRGD Thresholds
VOUT falling
PWRGD Low Voltage
I(PWRGD) = 0.5 mA
Switching frequency
RRT = 169 kΩ
fCLK
Synchronization frequency
VCLK-H
CLK High-Level
VCLK-L
CLK Low-Level
DCLK
CLK Duty Cycle
(5)
5.5
V
20 MHz bandwith
fSW
(1)
(2)
(3)
(4)
3.85
±1% (4)
VOUT rising
Power Good
4.5
2
Good
95%
Fault
108%
Fault
91%
Good
104%
μA
μA
10
µA
0.3
V
600
kHz
200
1200
kHz
2.0
5.5
400
CLK Control
V
20
500
50
V
0.5
V
80
%
See Light Load Efficiency (LLE) section for more information for output voltages < 1.5 V.
The minimum PVIN is 2.95 V or (VOUT + 0.7 V), whichever is greater. See Table 9 for more details.
The maximum PVIN voltage is 17 V or (22 x VOUT), whichever is less. See Table 9 for more details.
The stated limit of the set-point voltage tolerance includes the tolerance of both the internal voltage reference and the internal
adjustment resistor. The overall output voltage tolerance will be affected by the tolerance of the external RSET resistor.
Value when no voltage divider is present at the INH/UVLO pin. This pin has an internal pull-up. If it is left open, the device operates
when input power is applied. A small, low-leakage MOSFET is recommended for control. Do not tie this pin to VIN.
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ELECTRICAL CHARACTERISTICS (continued)
Over –40°C to 85°C free-air temperature, PVIN = VIN = 12 V, VOUT = 1.8 V, IOUT = 10 A,
CIN = 0.1 µF + 2 x 22 µF ceramic + 100 µF bulk, COUT = 4 x 47 µF ceramic (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Thermal Shutdown
CIN
MIN
Ceramic
°C
°C
External output capacitance
Non-ceramic
200
1500
220 (7)
5000 (8)
Equivalent series resistance (ESR)
(6)
(7)
(8)
µF
100 (6)
47 (7)
UNIT
10
44 (6)
Non-ceramic
Ceramic
MAX
175
Thermal shutdown hysteresis
External input capacitance
COUT
TYP
Thermal shutdown
35
µF
mΩ
A minimum of 44 µF of external ceramic capacitance is required across the input (VIN and PVIN connected) for proper operation. An
additional 100 µF of bulk capacitance is recommended. It is also recommended to place a 0.1 µF ceramic capacitor directly across the
PVIN and PGND pins of the device. Locate the input capacitance close to the device. When operating with split VIN and PVIN rails,
place 4.7µF of ceramic capacitance directly at the VIN pin. See Table 6 for more details.
The amount of required output capacitance varies depending on the output voltage (see Table 5 ). The amount of required capacitance
must include at least 1x 47µF ceramic capacitor. Locate the capacitance close to the device. Adding additional capacitance close to the
load improves the response of the regulator to load transients. See Table 5 and Table 6 more details.
The maximum output capacitance of 5000 µF includes the combination of both ceramic and non-ceramic capacitors. It may be
necessary to increase the slow start time when turning on into the maximum capacitance. See the Slow Start (SS/TR) section for
information on adjusting the slow start time.
THERMAL INFORMATION
LMZ31710
THERMAL METRIC (1)
RVQ42
UNIT
42 PINS
θJA
Junction-to-ambient thermal resistance (2)
13.3
(3)
ψJT
Junction-to-top characterization parameter
ψJB
Junction-to-board characterization parameter (4)
(1)
(2)
(3)
(4)
4
1.6
°C/W
5.3
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance, θJA, applies to devices soldered directly to a 100 mm x 100 mm double-sided PCB with
2 oz. copper and natural convection cooling. Additional airflow reduces θJA.
The junction-to-top characterization parameter, ψJT, estimates the junction temperature, TJ, of a device in a real system, using a
procedure described in JESD51-2A (sections 6 and 7). TJ = ψJT * Pdis + TT; where Pdis is the power dissipated in the device and TT is
the temperature of the top of the device.
The junction-to-board characterization parameter, ψJB, estimates the junction temperature, TJ, of a device in a real system, using a
procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB * Pdis + TB; where Pdis is the power dissipated in the device and TB is
the temperature of the board 1mm from the device.
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DEVICE INFORMATION
FUNCTIONAL BLOCK DIAGRAM
OCP_SEL
ILIM
OCP
INH/UVLO
Shutdown
Logic
PWRGD
VIN
Thermal
Shutdown
SENSE+
VIN
UVLO
PWRGD
Logic
PVIN
+
+
PH
VADJ
SS/TR
VREF
Comp
STSEL
Current
Share
ISHARE
SYNC_OUT
RT/CLK
Power
Stage
and
Control
Logic
VOUT
Oscillator
with PLL
PGND
AGND
LMZ31710
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Table 2. PIN DESCRIPTIONS
TERMINAL
NAME
DESCRIPTION
NO.
2
AGND
23
Zero volt reference for the analog control circuit. These pins are not connected together internal to the
device and must be connected to one another using an AGND plane of the PCB. These pins are associated
with the internal analog ground (AGND) of the device. See Layout Recommendations.
20
21
PGND
31
This is the return current path for the power stage of the device. Connect these pins to the load and to the
bypass capacitors associated with PVIN and VOUT.
32
33
VIN
3
Input bias voltage pin. Supplies the control circuitry of the power converter. Connect this pin to the input bias
supply. Connect bypass capacitors between this pin and PGND.
1
11
PVIN
12
Input switching voltage. Supplies voltage to the power switches of the converter. Connect these pins to the
input supply. Connect bypass capacitors between these pins and PGND.
39
40
34
35
36
VOUT
37
Output voltage. These pins are connected to the internal output inductor. Connect these pins to the output
load and connect external bypass capacitors between these pins and PGND.
38
41
10
13
14
15
PH
16
17
Phase switch node. These pins must be connected to one another using a small copper island under the
device for thermal relief. Do not place any external component on these pins or tie them to a pin of another
function.
18
19
42
5
DNC
9
Do Not Connect. Do not connect these pins to AGND, to another DNC pin, or to any other voltage. These
pins are connected to internal circuitry. Each pin must be soldered to an isolated pad.
24
ISHARE
25
Current share pin. Connect this pin to other LMZ31710 device's ISHARE pin when paralleling multple
LMZ31710 devices. When unused, treat this pin as a Do Not Connect (DNC) and leave it isolated from all
other signals or ground.
OCP_SEL
4
Over current protection select pin. Leave this pin open for hiccup mode operation. Connect this pin to AGND
for cycle-by-cycle operation. See Overcurrent Protection for more details.
ILIM
6
Current limit pin. Leave this pin open for full current limit threshold. Connect this pin to AGND to reduce the
current limit threshold by appoximately 3 A.
SYNC_OUT
7
Synchronization output pin. Provides a 180° out-of-phase clock signal.
PWRGD
8
Power Good flag pin. This open drain output asserts low if the output voltage is more than approximately
±6% out of regulation. A pull-up resistor is required.
RT/CLK
22
This pin is connected to an internal frequency setting resistor which sets the default switching frequency. An
external resistor can be connected from this pin to AGND to increase the frequency. This pin can also be
used to synchronize to an external clock.
VADJ
26
Connecting a resistor between this pin and AGND sets the output voltage.
SENSE+
27
Remote sense connection. This pin must be connected to VOUT at the load or at the device pins. Connect
this pin to VOUT at the load for improved regulation.
6
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Table 2. PIN DESCRIPTIONS (continued)
TERMINAL
DESCRIPTION
NAME
NO.
SS/TR
28
Slow-start and tracking pin. Connecting an external capacitor to this pin adjusts the output voltage rise time.
A voltage applied to this pin allows for tracking and sequencing control.
STSEL
29
Slow-start or track feature select. Connect this pin to AGND to enable the internal SS capacitor. Leave this
pin open to enable the TR feature.
INH/UVLO
30
Inhibit and UVLO adjust pin. Use an open drain or open collector logic device to ground this pin to control
the INH function. A resistor divider between this pin, AGND, and PVIN/VIN sets the UVLO voltage.
PVIN
1
AGND
2
VIN
40 39
PGND
PGND
VOUT
VOUT
VOUT
VOUT
VOUT
PVIN
PVIN
RVQ PACKAGE
(TOP VIEW)
38 37 36 35 34 33 32
31
PGND
30
INH/UVLO
3
29
STSEL
OCP_SEL
4
28
SS/TR
DNC
5
27
SENSE+
ILIM
6
26
VADJ
SYNC_OUT
7
25
ISHARE
PWRGD
8
24
DNC
DNC
9
23
AGND
22
RT/CLK
21
PGND
PGND
PH
PH
PH
14 15 16 17 18 19 20
PH
12 13
PH
11
PH
PH
PVIN
42
PH
10
PVIN
PH
41 VOUT
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TYPICAL CHARACTERISTICS (PVIN = VIN = 12 V)
100
30
Output Ripple Voltage (mV)
90
70
Vo = 5.0V, fsw = 1MHz
Vo = 3.3V, fsw = 750kHz
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
Vo = 1.2V, fsw = 300kHz
Vo = 0.9V, fsw = 250kHz
60
50
40
0
1
2
3
4
5
6
7
8
9
Output Current (A)
Vo = 5.0V, fsw = 1MHz
Vo = 3.3V, fsw = 750kHz
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
Vo = 1.2V, fsw = 300kHz
Vo = 0.9V, fsw = 250kHz
25
20
15
10
5
0
10
3.5
3.0
Gain (dB)
Power Dissipation (W)
4.0
2.5
2.0
1.5
40
120
30
90
20
60
10
30
0
0
±30
±10
±60
±90
Phase
±40
1000
0
2
4
6
8
Output Current (A)
Frequency (Hz)
80
Ambient Temperature (ƒC)
80
70
60
Airflow = 0 LFM
9R”9IVZ N+]
Vo = 2.5V, fsw = 750kHz
Vo = 3.3V, fsw = 750kHz
Vo = 5.0V, fsw = 1MHz
30
20
0
2
4
6
Output Current (A)
C006
Figure 5. VOUT= 1.8 V, IOUT= 10 A, COUT1= 200 µF ceramic,
fSW= 500 kHz
90
40
±120
400k
100k
C004
90
50
10k
10
Figure 4. Power Dissipation vs. Output Current
Ambient Temperature (ƒC)
C004
±30
0.0
8
70
60
50
Airflow = 200 LFM
40
9R”9IVZ N+]
Vo = 2.5V, fsw = 750kHz
Vo = 3.3V, fsw = 750kHz
Vo = 5.0V, fsw = 1MHz
30
20
10
0
C001
Figure 6. Safe Operating Area
8
10
Gain
0.5
(2)
8
±20
1.0
(1)
6
Figure 3. Voltage Ripple vs. Output Current
Vo = 5.0V, fsw = 1MHz
Vo = 3.3V, fsw = 750kHz
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
Vo = 1.2V, fsw = 300kHz
Vo = 0.9V, fsw = 250kHz
4.5
4
Output Current (A)
Figure 2. Efficiency vs. Output Current
5.0
2
C001
Phase (ƒ)
Efficiency (%)
80
(1) (2)
2
4
6
Output Current (A)
8
10
C001
Figure 7. Safe Operating Area
The electrical characteristic data has been developed from actual products tested at 25°C. This data is considered typical for the
converter. Applies to Figure 2, Figure 3, and Figure 4.
The temperature derating curves represent the conditions at which internal components are at or below the manufacturer's maximum
operating temperatures. Derating limits apply to devices soldered directly to a 100 mm × 100 mm double-sided PCB with 2 oz. copper.
Applies to Figure 6 and Figure 7.
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TYPICAL CHARACTERISTICS (PVIN = VIN = 5 V)
100
30
Output Voltage Ripple (mV)
80
70
Vo = 3.3V, fsw = 750kHz
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
Vo = 1.2V, fsw = 300kHz
Vo = 0.9V, fsw = 250kHz
Vo = 0.6V, fsw = 200kHz
60
50
40
0
1
2
3
4
5
6
7
8
9
Output Current (A)
25
20
15
10
5
10
0
3.5
3.0
6
8
10
C004
Figure 9. Voltage Ripple vs. Output Current
Gain (dB)
Power Dissipation (W)
4.0
4
Output Current (A)
Vo = 3.3V, fsw = 750kHz
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
Vo = 1.2V, fsw = 300kHz
Vo = 0.9V, fsw = 250kHz
Vo = 0.6V, fsw = 200kHz
4.5
2
C001
Figure 8. Efficiency vs. Output Current
5.0
Vo = 3.3V, fsw = 750kHz
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
Vo = 1.2V, fsw = 300kHz
Vo = 0.9V, fsw = 250kHz
Vo = 0.6V, fsw = 200kHz
2.5
2.0
1.5
40
120
30
90
20
60
10
30
0
0
±30
±10
Phase (ƒ)
Efficiency (%)
90
(1) (2)
±60
±20
Gain
1.0
±90
±30
Phase
0.5
±40
1000
0.0
0
2
4
6
8
10k
10
Output Current (A)
100k
±120
400k
Frequency (Hz)
C006
C004
Figure 10. Power Dissipation vs. Output Current
Figure 11. VOUT= 1.8 V, IOUT= 10 A, COUT1= 200 µF ceramic,
fSW= 500 kHz
90
Ambient Temperature (ƒC)
80
70
60
50
Airflow = 0 LFM
40
All Output Voltages
30
20
0
2
4
6
8
Output Current (A)
10
C001
Figure 12. Safe Operating Area
(1)
(2)
The electrical characteristic data has been developed from actual products tested at 25°C. This data is considered typical for the
converter. Applies to Figure 8, Figure 9, and Figure 10.
The temperature derating curves represent the conditions at which internal components are at or below the manufacturer's maximum
operating temperatures. Derating limits apply to devices soldered directly to a 100 mm × 100 mm double-sided PCB with 2 oz. copper.
Applies to Figure 12.
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TYPICAL CHARACTERISTICS (PVIN = 3.3 V, VIN = 5 V)
100
30
Output Ripple Voltage (mV)
80
70
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
60
Vo = 1.2V, fsw = 300kHz
50
Vo = 0.9V, fsw = 250kHz
25
20
15
10
Vo = 0.6V, fsw = 200kHz
40
0
1
2
3
4
5
6
7
8
9
Output Current (A)
5
10
0
3.5
3.0
6
8
10
C004
Figure 14. Voltage Ripple vs. Output Current
Gain (dB)
Power Dissipation (W)
4.0
4
Output Current (A)
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
Vo = 1.2V, fsw = 300kHz
Vo = 0.9V, fsw = 250kHz
Vo = 0.6V, fsw = 200kHz
4.5
2
C001
Figure 13. Efficiency vs. Output Current
5.0
Vo = 2.5V, fsw = 750kHz
Vo = 1.8V, fsw = 500kHz
Vo = 1.2V, fsw = 300kHz
Vo = 0.9V, fsw = 250kHz
Vo = 0.6V, fsw = 200kHz
2.5
2.0
1.5
40
120
30
90
20
60
10
30
0
0
±30
±10
Phase (ƒ)
Efficiency (%)
90
(1) (2)
±60
±20
Gain
1.0
±90
±30
Phase
0.5
±40
1000
0.0
0
2
4
6
8
10k
10
Output Current (A)
Frequency (Hz)
100k
±120
400k
C006
C004
Figure 15. Power Dissipation vs. Output Current
Figure 16. VOUT= 1.8 V, IOUT= 10 A, COUT1= 200 µF ceramic,
fSW= 500 kHz
90
Ambient Temperature (ƒC)
80
70
60
50
Airflow = 0 LFM
40
All Output Voltages
30
20
0
2
4
6
8
Output Current (A)
10
C001
Figure 17. Safe Operating Area
(1)
(2)
10
The electrical characteristic data has been developed from actual products tested at 25°C. This data is considered typical for the
converter. Applies to Figure 13, Figure 14, and Figure 15.
The temperature derating curves represent the conditions at which internal components are at or below the manufacturer's maximum
operating temperatures. Derating limits apply to devices soldered directly to a 100 mm × 100 mm double-sided PCB with 2 oz. copper.
Applies to Figure 17.
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APPLICATION INFORMATION
Adjusting the Output Voltage
The VADJ control sets the output voltage of the LMZ31710. The output voltage adjustment range is from 0.6V to
5.5V. The adjustment method requires the addition of RSET, which sets the output voltage, the connection of
SENSE+ to VOUT, and in some cases RRT which sets the switching frequency. The RSET resistor must be
connected directly between the VADJ (pin 26) and AGND (pin 23). The SENSE+ pin (pin 27) must be connected
to VOUT either at the load for improved regulation or at VOUT of the device. The RRT resistor must be connected
directly between the RT/CLK (pin 22) and AGND (pin 23). Table 3 gives the standard external RSET resistor for a
number of common bus voltages, along with the recommended RRT resistor for that output voltage.
Table 3. Standard RSET Resistor Values for Common Output Voltages
RESISTORS
OUTPUT VOLTAGE VOUT (V)
0.9
1.0
1.2
1.8
2.5
3.3
5.0
RSET (kΩ)
2.87
2.15
1.43
0.715
0.453
0.316
0.196
RRT (kΩ)
1000
1000
487
169
90.9
90.9
63.4
For other output voltages, the value of the required resistor can either be calculated using the following formula,
or simply selected from the range of values given in Table 4.
1.43
RSET =
(kW )
æ æ VOUT ö ö
çç
÷ - 1÷
è è 0.6 ø ø
(1)
Table 4. Standard RSET Resistor Values
VOUT (V)
RSET (kΩ)
RRT(kΩ)
fSW(kHz)
VOUT (V)
RSET (kΩ)
RRT(kΩ)
fSW(kHz)
0.6
open
OPEN
200
3.1
0.348
90.9
750
0.7
8.66
OPEN
200
3.2
0.332
90.9
750
0.8
4.32
OPEN
200
3.3
0.316
90.9
750
0.9
2.87
1000
250
3.4
0.309
90.9
750
1.0
2.15
1000
250
3.5
0.294
90.9
750
1.1
1.74
1000
250
3.6
0.287
90.9
750
1.2
1.43
487
300
3.7
0.280
90.9
750
1.3
1.24
487
300
3.8
0.267
90.9
750
1.4
1.07
487
300
3.9
0.261
90.9
750
1.5
0.953
487
300
4.0
0.255
90.9
750
1.6
0.866
487
300
4.1
0.243
63.4
1000
1.7
0.787
487
300
4.2
0.237
63.4
1000
1.8
0.715
169
500
4.3
0.232
63.4
1000
1.9
0.665
169
500
4.4
0.226
63.4
1000
2.0
0.619
169
500
4.5
0.221
63.4
1000
2.1
0.576
169
500
4.6
0.215
63.4
1000
2.2
0.536
169
500
4.7
0.210
63.4
1000
2.3
0.511
169
500
4.8
0.205
63.4
1000
2.4
0.475
169
500
4.9
0.200
63.4
1000
2.5
0.453
90.9
750
5.0
0.196
63.4
1000
2.6
0.432
90.9
750
5.1
0.191
63.4
1000
2.7
0.412
90.9
750
5.2
0.187
63.4
1000
2.8
0.392
90.9
750
5.3
0.182
63.4
1000
2.9
0.374
90.9
750
5.4
0.178
63.4
1000
3.0
0.357
90.9
750
5.5
0.174
63.4
1000
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Capacitor Recommendations for the LMZ31710 Power Supply
Capacitor Technologies
Electrolytic, Polymer-Electrolytic Capacitors
When using electrolytic capacitors, high-quality, computer-grade electrolytic capacitors are recommended.
Polymer-electrolytic type capacitors are recommended for applications where the ambient operating temperature
is less than 0°C. The Sanyo OS-CON capacitor series is suggested due to the lower ESR, higher rated surge,
power dissipation, ripple current capability, and small package size. Aluminum electrolytic capacitors provide
adequate decoupling over the frequency range of 2 kHz to 150 kHz, and are suitable when ambient temperatures
are above 0°C.
Ceramic Capacitors
The performance of aluminum electrolytic capacitors is less effective than ceramic capacitors above 150 kHz.
Multilayer ceramic capacitors have a low ESR and a resonant frequency higher than the bandwidth of the
regulator. They can be used to reduce the reflected ripple current at the input as well as improve the transient
response of the output.
Tantalum, Polymer-Tantalum Capacitors
Polymer-tantalum type capacitors are recommended for applications where the ambient operating temperature is
less than 0°C. The Sanyo POSCAP series and Kemet T530 capacitor series are recommended rather than many
other tantalum types due to their lower ESR, higher rated surge, power dissipation, ripple current capability, and
small package size. Tantalum capacitors that have no stated ESR or surge current rating are not recommended
for power applications.
Input Capacitor
The LMZ31710 requires a minimum input capacitance of 44 μF of ceramic type. An additional 100 µF of nonceramic capacitance is recommended for applications with transient load requirements. The voltage rating of
input capacitors must be greater than the maximum input voltage. At worst case, when operating at 50% duty
cycle and maximum load, the combined ripple current rating of the input capacitors must be at least 5 Arms.
Table 6 includes a preferred list of capacitors by vendor. It is also recommended to place a 0.1 µF ceramic
capacitor directly across the PVIN and PGND pins of the device. When operating with split VIN and PVIN rails,
place 4.7µF of ceramic capacitance directly at the VIN pin.
Output Capacitor
The required output capacitance is determined by the output voltage of the LMZ31710. See Table 5 for the
amount of required capacitance. The effects of temperature and capacitor voltage rating must be considered
when selecting capacitors to meet the minimum required capacitance. The required output capacitance can be
comprised of all ceramic capacitors, or a combination of ceramic and bulk capacitors. The required capacitance
must include at least one 47 µF ceramic. When adding additional non-ceramic bulk capacitors, low-ESR devices
like the ones recommended in Table 6 are required. The required capacitance above the minimum is determined
by actual transient deviation requirements. See Table 7 for typical transient response values for several output
voltage, input voltage and capacitance combinations. Table 6 includes a preferred list of capacitors by vendor.
Table 5. Required Output Capacitance
VOUT RANGE (V)
(1)
12
MINIMUM REQUIRED COUT (µF)
MIN
MAX
0.6
< 0.8
500 µF (1)
0.8
< 1.2
300 µF (1)
1.2
< 3.0
200 µF (1)
3.0
< 4.0
100 µF (1)
4.0
5.5
47 µF ceramic
Minimum required must include at least one 47 µF ceramic capacitor.
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Table 6. Recommended Input/Output Capacitors (1)
CAPACITOR CHARACTERISTICS
VENDOR
SERIES
PART NUMBER
WORKING
VOLTAGE
(V)
CAPACITANCE
(µF)
ESR (2)
(mΩ)
Murata
X5R
GRM32ER61E226K
25
22
2
TDK
X5R
C3225X5R0J107M
6.3
100
2
TDK
X5R
C3225X5R0J476K
6.3
47
2
Murata
X5R
GRM32ER60J107M
6.3
100
2
Murata
X5R
GRM32ER60J476M
6.3
47
2
100
30
Panasonic
EEH-ZA
EEH-ZA1E101XP
25
Sanyo
POSCAP
16TQC68M
16
68
50
Kemet
T520
T520V107M010ASE025
10
100
25
Sanyo
POSCAP
10TPE220ML
10
220
25
Sanyo
POSCAP
6TPE100MI
6.3
100
25
Sanyo
POSCAP
2R5TPE220M7
2.5
220
7
Kemet
T530
T530D227M006ATE006
6.3
220
6
Kemet
T530
T530D337M006ATE010
6.3
330
10
Sanyo
POSCAP
2TPF330M6
2.0
330
6
Sanyo
POSCAP
6TPE330MFL
6.3
330
15
(1)
(2)
Capacitor Supplier Verification, RoHS, Lead-free and Material Details
Consult capacitor suppliers regarding availability, material composition, RoHS and lead-free status, and manufacturing process
requirements for any capacitors identified in this table.
Maximum ESR @ 100kHz, 25°C.
Transient Response
Table 7. Output Voltage Transient Response
CIN1 = 3x 47 µF CERAMIC, CIN2 = 100 µF POLYMER-TANTALUM
VOLTAGE DEVIATION (mV)
VOUT (V)
0.6
COUT1 Ceramic
COUT2 BULK
2.5 A LOAD STEP,
(1 A/µs)
5 A LOAD STEP,
(1 A/µs)
5
500 µF
220 µF
25
60
100
12
500 µF
220 µF
30
65
100
300 µF
220 µF
40
85
100
300 µF
470 µF
35
70
110
300 µF
220 µF
45
90
100
300 µF
470 µF
35
75
110
200 µF
220 µF
55
110
110
200 µF
470 µF
45
90
110
200 µF
220 µF
55
110
110
200 µF
470 µF
45
90
110
200 µF
220 µF
70
140
130
200 µF
470 µF
60
120
140
200 µF
220 µF
70
145
140
200 µF
470 µF
55
120
150
5
100 µF
220 µF
115
230
200
12
100 µF
220 µF
120
240
200
5
0.9
12
5
1.2
12
5
1.8
12
3.3
RECOVERY TIME
(µs)
VIN (V)
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Transient Waveforms
14
Figure 18. PVIN = 12V, VOUT = 0.9V, 2.5A Load
Step
Figure 19. PVIN = 5V, VOUT = 0.9V, 2.5A Load Step
Figure 20. PVIN = 12V, VOUT = 1.2V, 2.5A Load
Step
Figure 21. PVIN = 5V, VOUT = 1.2V, 2.5A Load Step
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Figure 22. PVIN = 12V, VOUT = 1.8V, 2.5A Load
Step
Figure 23. PVIN = 5V, VOUT = 1.8V, 2.5A Load Step
Application Schematics
LMZ31710
VIN
VIN / PVIN
4.5 V to 17 V
PVIN
VOUT
1.2 V
SENSE+
VOUT
+
+
CIN1
CIN2
100 µF 47 µF
CIN3
0.1 µF
ISHARE
SYNC_OUT
COUT1
2x 100 µF
COUT2
220 µF
PWRGD
INH/UVLO
RT/CLK
SS/TR
VADJ
STSEL AGND PGND
RSET
1.43 k
RRT
487 k
Figure 24. Typical Schematic
PVIN = VIN = 4.5 V to 17 V, VOUT = 1.2 V
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LMZ31710
VIN
VIN / PVIN
4.5 V to 17 V
PVIN
VOUT
3.3 V
SENSE+
VOUT
+
+
CIN1
CIN2
100 µF 47 µF
CIN3
0.1 µF
COUT1
100 µF
ISHARE
SYNC_OUT
COUT2
220 µF
PWRGD
INH/UVLO
RT/CLK
SS/TR
RRT
90.9 k
VADJ
STSEL AGND PGND
RSET
316
Figure 25. Typical Schematic
PVIN = VIN = 4.5 V to 17 V, VOUT = 3.3 V
VIN
4.5 V to 17 V
CIN3
4.7 µF
VIN LMZ31710
VOUT
1.0 V
SENSE+
PVIN
3.3 V
PVIN
VOUT
+
+
CIN1
CIN2
100 µF 47 µF
CIN3
0.1 µF
ISHARE
SYNC_OUT
COUT1
3x 100 µF
COUT2
220 µF
PWRGD
INH/UVLO
RT/CLK
SS/TR
VADJ
STSEL AGND PGND
RSET
2.15 k
RRT
1M
Figure 26. Typical Schematic
PVIN = 3.3 V, VIN = 4.5 V to 17 V, VOUT = 1.0 V
16
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VIN and PVIN Input Voltage
The LMZ31710 allows for a variety of applications by using the VIN and PVIN pins together or separately. The
VIN voltage supplies the internal control circuits of the device. The PVIN voltage provides the input voltage to the
power converter system.
If tied together, the input voltage for the VIN pin and the PVIN pin can range from 4.5 V to 17 V. If using the VIN
pin separately from the PVIN pin, the VIN pin must be greater than 4.5 V, and the PVIN pin can range from as
low as 2.95 V to 17 V. When operating from a split rail, it is recommended to supply VIN from 5 V to 12 V, for
best performance. A voltage divider connected to the INH/UVLO pin can adjust either input voltage UVLO
appropriately. See the Programmable Undervoltage Lockout (UVLO) section of this datasheet for more
information.
3.3 V PVIN Operation
Applications operating from a PVIN of 3.3 V must provide at least 4.5 V for VIN. It is recommended to supply VIN
from 5 V to 12 V, for best performance. See application note, SNVA692 for help creating 5 V from 3.3 V using a
small, simple charge pump device.
Power Good (PWRGD)
The PWRGD pin is an open drain output. Once the voltage on the SENSE+ pin is between 95% and 104% of the
set voltage, the PWRGD pin pull-down is released and the pin floats. The recommended pull-up resistor value is
between 10 kΩ and 100 kΩ to a voltage source that is 5.5 V or less. The PWRGD pin is in a defined state once
VIN is greater than 1.0 V, but with reduced current sinking capability. The PWRGD pin achieves full current
sinking capability once the VIN pin is above 4.5V. The PWRGD pin is pulled low when the voltage on SENSE+ is
lower than 91% or greater than 108% of the nominal set voltage. Also, the PWRGD pin is pulled low if the input
UVLO or thermal shutdown is asserted, the INH pin is pulled low, or the SS/TR pin is below 1.4 V.
Light Load Efficiency (LLE)
The LMZ31710 operates in pulse skip mode at light load currents to improve efficiency and decrease power
dissipation by reducing switching and gate drive losses.
These pulses may cause the output voltage to rise when there is no load to discharge the energy. For output
voltages < 1.5 V, a minimum load is required. The amount of required load can be determined by Equation 2. In
most cases the minimum current drawn by the load circuit will be enough to satisfy this load. Applications
requiring a load resistor to meet the minimum load, the added power dissipation will be ≤ 3.6 mW. A single 0402
size resistor across VOUT and PGND can be used.
(2)
When VOUT = 0.6 V and RSET = OPEN, the minimum load current is 600 µA.
SYNC_OUT
The LMZ31710 provides a 180° out-of-phase clock signal for applications requiring synchronization. The
SYNC_OUT pin produces a 50% duty cycle clock signal that is the same frequency as the device's switching
frequency, but is 180° out of phase. Operating two devices 180° out of phase reduces input and output voltage
ripple. The SYNC_OUT clock signal is compatible with other LMZ3 devices that have a CLK input.
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Parallel Operation
Up to six LMZ31710 devices can be paralleled for increased output current. Multiple connections must be made
between the paralleled devices and the component selection is slightly different than for a stand-alone
LMZ31710 device. A typical LMZ31710 parallel schematic is shown in Figure 27. Refer to application note,
SNVA695 for information and design help when paralleling multiple LMZ31710 devices.
VIN = 12V
PWRGD
VIN
PVIN
SENSE+
220µF
22µF
0.1µF
LMZ31710
22µF
100µF
100µF
VADJ
SS/TR
PGND
RSET
715 Ω
0.1µF
LMZ31710
PWRGD
SENSE+
VOUT
SYNC_OUT
RT/CLK
330µF
VADJ
VIN
PVIN
100µF
AGND
CSS
SS/TR
Voltage
Supervisor
CSH
INH
Control
ISHARE
5V
100µF
STSEL
ISHARE
RRT
169kΩ
INH/UVLO
Sync Freq
500KHz
INH/UVLO
SYNC_OUT
RT/CLK
VO = 1.8V
VOUT
STSEL
AGND
RRT
169kΩ
PGND
Figure 27. Typical LMZ31710 Parallel Schematic
18
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Power-Up Characteristics
When configured as shown in the front page schematic, the LMZ31710 produces a regulated output voltage
following the application of a valid input voltage. During the power-up, internal soft-start circuitry slows the rate
that the output voltage rises, thereby limiting the amount of in-rush current that can be drawn from the input
source. Figure 28 shows the start-up waveforms for a LMZ31710, operating from a 5-V input (PVIN=VIN) and
with the output voltage adjusted to 1.8 V. Figure 29 shows the start-up waveforms for a LMZ31710 starting up
into a pre-biased output voltage. The waveforms were measured with a 5-A constant current load.
Figure 28. Start-Up Waveforms
Figure 29. Start-up into Pre-bias
Pre-Biased Start-Up
The LMZ31710 has been designed to prevent the low-side MOSFET from discharging a pre-biased output.
During pre-biased startup, the low-side MOSFET does not turn on until the high-side MOSFET has started
switching. The high-side MOSFET does not start switching until the slow start voltage exceeds the voltage on the
VADJ pin. Refer to Figure 29.
Remote Sense
The SENSE+ pin must be connected to VOUT at the load, or at the device pins.
Connecting the SENSE+ pin to VOUT at the load improves the load regulation performance of the device by
allowing it to compensate for any I-R voltage drop between its output pins and the load. An I-R drop is caused by
the high output current flowing through the small amount of pin and trace resistance. This should be limited to a
maximum of 300 mV.
NOTE
The remote sense feature is not designed to compensate for the forward drop of nonlinear
or frequency dependent components that may be placed in series with the converter
output. Examples include OR-ing diodes, filter inductors, ferrite beads, and fuses. When
these components are enclosed by the SENSE+ connection, they are effectively placed
inside the regulation control loop, which can adversely affect the stability of the regulator.
Thermal Shutdown
The internal thermal shutdown circuitry forces the device to stop switching if the junction temperature exceeds
175°C typically. The device reinitiates the power up sequence when the junction temperature drops below 165°C
typically.
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Output On/Off Inhibit (INH)
The INH pin provides electrical on/off control of the device. Once the INH pin voltage exceeds the threshold
voltage, the device starts operation. If the INH pin voltage is pulled below the threshold voltage, the regulator
stops switching and enters low quiescent current state. The INH pin has an internal pull-up current source,
allowing the user to float the INH pin for enabling the device.
If an application requires controlling the INH pin, use an open drain/collector device, or a suitable logic gate to
interface with the pin. Using a voltage superviser to control the INH pin allows control of the turn-on and turn-off
of the device as opposed to relying on the ramp up or down if the input voltage source.
Figure 30 shows the typical application of the inhibit function. Turning Q1 on applies a low voltage to the inhibit
control (INH) pin and disables the output of the supply, shown in Figure 31. If Q1 is turned off, the supply
executes a soft-start power-up sequence, as shown in Figure 32. A regulated output voltage is produced within 2
ms. The waveforms were measured with a 5-A constant current load.
INH/UVLO
Q1
INH
Control
AGND
STSEL
SS/TR
Figure 30. Typical Inhibit Control
Figure 31. Inhibit Turn-Off
20
Figure 32. Inhibit Turn-On
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Slow Start (SS/TR)
Connecting the STSEL pin to AGND and leaving SS/TR pin open enables the internal SS capacitor with a slow
start interval of approximately 1.2 ms. Adding additional capacitance between the SS pin and AGND increases
the slow start time. Increasing the slow start time will reduce inrush current seen by the input source and reduce
the current seen by the device when charging the output capacitors. To avoid the activation of current limit and
ensure proper start-up, the SS capacitor may need to be increased when operating near the maximum output
capacitance limit.
Table 8 shows an additional SS capacitor connected to the SS/TR pin and the STSEL pin connected to AGND.
See Table 8 below for SS capacitor values and timing interval.
SS/TR
CSS
(Optional)
AGND
STSEL
Figure 33. Slow-Start Capacitor (CSS) and STSEL Connection
Table 8. Slow-Start Capacitor Values and Slow-Start Time
CSS (nF)
open
3.3
4.7
10
15
22
33
SS Time (msec)
1.2
2.1
2.5
3.8
5.1
7.0
9.8
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Overcurrent Protection
For protection against load faults, the LMZ31710 incorporates output overcurrent protection. The overcurrent
protection mode can be selected using the OCP_SEL pin. Leaving the OCP_SEL pin open selects hiccup mode
and connecting it to AGND selects cycle-by-cycle mode. In hiccup mode, applying a load that exceeds the
regulator's overcurrent threshold causes the regulated output to shut down. Following shutdown, the module
periodically attempts to recover by initiating a soft-start power-up as shown in Figure 34. This is described as a
hiccup mode of operation, whereby the module continues in a cycle of successive shutdown and power up until
the load fault is removed. During this period, the average current flowing into the fault is significantly reduced
which reduces power dissipation. Once the fault is removed, the module automatically recovers and returns to
normal operation as shown in Figure 35.
In cycle-by-cycle mode, applying a load that exceeds the regulator's overcurrent threshold limits the output
current and reduces the output voltage as shown in Figure 36. During this period, the current flowing into the
fault remains high causing the power dissipation to stay high as well. Once the overcurrent condition is removed,
the output voltage returns to the set-point voltage as shown in Figure 37.
22
Figure 34. Overcurrent Limiting (Hiccup)
Figure 35. Removal of Overcurrent (Hiccup)
Figure 36. Overcurrent Limiting (Cycle-by-Cycle)
Figure 37. Removal of Overcurrent (Cycle-byCycle)
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Synchronization (CLK)
An internal phase locked loop (PLL) has been implemented to allow synchronization between 200 kHz and
1200 kHz, and to easily switch from RT mode to CLK mode. To implement the synchronization feature, connect
a square wave clock signal to the RT/CLK pin with a duty cycle between 20% to 80%. The clock signal amplitude
must transition lower than 0.5 V and higher than 2.0 V. The start of the switching cycle is synchronized to the
falling edge of RT/CLK pin. In applications where both RT mode and CLK mode are needed, the device can be
configured as shown in Figure 38.
Before the external clock is present, the device works in RT mode and the switching frequency is set by RT
resistor. When the external clock is present, the CLK mode overrides the RT mode. The first time the CLK pin is
pulled above the RT/CLK high threshold (2.0 V), the device switches from RT mode to CLK mode and the
RT/CLK pin becomes high impedance as the PLL starts to lock onto the frequency of the external clock. It is not
recommended to switch from CLK mode back to RT mode because the internal switching frequency drops to
100 kHz first before returning to the switching frequency set by the RT resistor (RRT).
External Clock
200 kHz to 1200 kHz
RT/CLK
RRT
AGND
Figure 38. RT/CLK Configuration
The synchronization frequency must be selected based on the output voltages of the devices being
synchronized. Table 9 shows the allowable frequencies for a given range of output voltages. For the most
efficient solution, always synchronize to the lowest allowable frequency. For example, an application requires
synchronizing three LMZ31710 devices with output voltages of 1.0 V, 1.2 V and 1.8 V, all powered from
PVIN = 12 V. Table 9 shows that all three output voltages should be synchronized to 300 kHz.
Table 9. Synchronization Frequency vs Output Voltage
PVIN = 12 V
SYNCHRONIZATION
FREQUENCY (kHz)
PVIN = 5 V
VOUT RANGE (V)
VOUT RANGE (V)
MIN
MAX
MIN
MAX
200
0.6
1.3
0.6
1.5
300
0.8
2.0
0.6
4.3
400
1.1
2.5
0.6
4.3
500
1.4
3.4
0.6
4.3
600
1.6
5.0
0.7
4.3
700
1.9
5.5
0.8
4.3
800
2.1
5.5
0.9
4.3
900
2.4
5.5
1.0
4.3
1000
2.7
5.5
1.1
4.3
1100
2.9
5.5
1.3
4.3
1200
3.2
5.5
1.4
4.3
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Sequencing (SS/TR)
Many of the common power supply sequencing methods can be implemented using the SS/TR, INH and
PWRGD pins. The sequential method is illustrated in Figure 39 using two LMZ31710 devices. The PWRGD pin
of the first device is coupled to the INH pin of the second device which enables the second power supply once
the primary supply reaches regulation. Figure 40 shows sequential turn-on waveforms of two LMZ31710 devices.
INH/UVLO
VOUT1
VOUT
STSEL
PWRGD
INH/UVLO
VOUT2
VOUT
STSEL
PWRGD
Figure 39. Sequencing Schematic
Figure 40. Sequencing Waveforms
Simultaneous power supply sequencing can be implemented by connecting the resistor network of R1 and R2
shown in Figure 41 to the output of the power supply that needs to be tracked or to another voltage reference
source. The tracking voltage must exceed 750mV before VOUT2 reaches its set-point voltage. The PWRGD output
of the VOUT2 device may remain low if the tracking voltage does not exceed 1.4V. Figure 42 shows simultaneous
turn-on waveforms of two LMZ31710 devices. Use Equation 3 and Equation 4 to calculate the values of R1 and
R2.
R1 =
(VOUT2 ´ 12.6 )
0.6
R2 =
(kW )
(3)
0.6 ´ R1
(kW )
V
( OUT2 - 0.6 )
(4)
VOUT1
VOUT
INH/UVLO
STSEL
SS/TR
VOUT2
VOUT
INH/UVLO
R1
STSEL
SS/TR
R2
Figure 41. Simultaneous Tracking Schematic
24
Figure 42. Simultaneous Tracking Waveforms
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Programmable Undervoltage Lockout (UVLO)
The LMZ31710 implements internal UVLO circuitry on the VIN pin. The device is disabled when the VIN pin
voltage falls below the internal VIN UVLO threshold. The internal VIN UVLO rising threshold is 4.5 V(max) with a
typical hysteresis of 150 mV.
If an application requires either a higher UVLO threshold on the VIN pin or a higher UVLO threshold for a
combined VIN and PVIN, then the UVLO pin can be configured as shown in Figure 43 or Figure 44. Table 10
lists standard values for RUVLO1 and RUVLO2 to adjust the VIN UVLO voltage up.
PVIN
PVIN
VIN
VIN
RUVLO1
RUVLO1
INH/UVLO
INH/UVLO
RUVLO2
RUVLO2
Figure 43. Adjustable VIN UVLO
Figure 44. Adjustable VIN and PVIN Undervoltage
Lockout
Table 10. Standard Resistor values for Adjusting VIN UVLO
VIN UVLO (V)
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
RUVLO1 (kΩ)
68.1
68.1
68.1
68.1
68.1
68.1
68.1
68.1
68.1
68.1
68.1
RUVLO2 (kΩ)
21.5
18.7
16.9
15.4
14.0
13.0
12.1
11.3
10.5
9.76
9.31
Hysteresis (mV)
400
415
430
450
465
480
500
515
530
550
565
For a split rail application, if a secondary UVLO on PVIN is required, VIN must be ≥ 4.5V. Figure 45 shows the
PVIN UVLO configuration. Use Table 11 to select RUVLO1 and RUVLO2 for PVIN. If PVIN UVLO is set for less than
3.0 V, a 5.1-V zener diode should be added to clamp the voltage on the UVLO pin below 6 V.
> 4.5 V
VIN
PVIN
RUVLO1
INH/UVLO
RUVLO2
Figure 45. Adjustable PVIN Undervoltage Lockout, (VIN ≥4.5 V)
Table 11. Standard Resistor Values for Adjusting PVIN UVLO, (VIN ≥4.5 V)
PVIN UVLO (V)
2.9
3.0
3.5
4.0
4.5
RUVLO1 (kΩ)
68.1
68.1
68.1
68.1
68.1
RUVLO2 (kΩ)
47.5
44.2
34.8
28.7
24.3
Hysteresis (mV)
330
335
350
365
385
For higher PVIN UVLO voltages see
Table 10 for resistor values
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Layout Considerations
To achieve optimal electrical and thermal performance, an optimized PCB layout is required. Figure 46 thru
Figure 49, shows a typical PCB layout. Some considerations for an optimized layout are:
• Use large copper areas for power planes (PVIN, VOUT, and PGND) to minimize conduction loss and thermal
stress.
• Place ceramic input and output capacitors close to the device pins to minimize high frequency noise.
• Locate additional output capacitors between the ceramic capacitor and the load.
• Keep AGND and PGND separate from one another.
• Place RSET, RRT, and CSS as close as possible to their respective pins.
• Use multiple vias to connect the power planes to internal layers.
26
Figure 46. Typical Top-Layer Layout
Figure 47. Typical Layer-2 Layout
Figure 48. Typical Layer 3 Layout
Figure 49. Typical Bottom-Layer Layout
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EMI
The LMZ31710 is compliant with EN55022 Class B radiated emissions. Figure 50 and Figure 51 show typical
examples of radiated emissions plots for the LMZ31710 operating from 5V and 12V respectively. Both graphs
include the plots of the antenna in the horizontal and vertical positions.
Figure 50. Radiated Emissions 5-V Input, 1.8-V
Output, 10-A Load (EN55022 Class B)
Figure 51. Radiated Emissions 12-V Input, 1.8-V
Output, 10-A Load (EN55022 Class B)
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PACKAGE OPTION ADDENDUM
www.ti.com
18-Oct-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMZ31710RVQR
ACTIVE
BQFN
RVQ
42
500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
LMZ31710
LMZ31710RVQT
ACTIVE
BQFN
RVQ
42
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
LMZ31710
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
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PACKAGE OPTION ADDENDUM
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
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