Switching Diodes MA2B190 Silicon epitaxial planar type Unit : mm φ 0.56 max. For switching circuits 1 ■ Features • Low forward dynamic resistance rf 24 min. COLORED BAND INDICATES CATHODE 1st Band 2nd Band Reverse voltage (DC) Symbol Rating Unit VR 35 V Repetitive peak reverse voltage VRRM 35 V Average forward current IF(AV) 100 mA Repetitive peak forward current IFRM 225 mA Non-repetitive peak forward surge current* IFSM 500 mA Junction temperature Tj 200 °C Storage temperature Tstg −55 to +200 °C 24 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter 4.5 max. • Small terminal capacitance, Ct 2 1: Cathode 2: Anode JEDEC: DO-35 φ 1.95 max. Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol Conditions Min Typ Max Unit IR1 VR = 15 V 0.005 µA IR2 VR = 30 V 0.01 µA IR3 VR = 35 V, Ta = 150°C 100 µA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 4 pF Forward dynamic resistance rf*1 IF = 3 mA, f = 30 MHZ 2.5 Ω rf*2 IF = 3 mA, f = 30 MHZ 3.6 Ω trr IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 0.2 ms Reverse recovery time*3 35 V Note) 1. Rated input/output frequency: 2.5 MHz 2. *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A *2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% ■ Cathode Indication Type No. Color A VR MA2B190 1st Band White 2nd Band White Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω 1 MA2B190 Switching Diodes 0.8 10 Ta = 150°C 100°C 25°C − 20°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 103 3 mA 0.6 1 mA 0.4 0.1 mA 0 −40 Forward voltage VF (V) 40 Ct VR Forward dynamic resistance rf (Ω) Terminal capacitance Ct (pF) 4 3 2 1 0 10 20 30 40 50 Reverse voltage VR (V) 2 120 160 60 f = 30 MHz 10 1 0.1 0.01 0.1 0.3 1 3 10 30 Forward current IF (mA) 25°C 0 10 20 30 40 Reverse voltage VR (V) r f IF 5 0 80 100 f = 1 MHz Ta = 25°C 100°C 1 10−2 0 Ambient temperature Ta (°C) 6 10 10−1 0.2 1.2 Ta = 150°C 102 IF = 10 mA Reverse current IR (nA) 102 1 IR V R VF Ta 1.0 Forward voltage VF (V) Forward current IF (mA) IF V F 103 100 50