Schottky Barrier Diodes (SBD) MA2C719 Silicon epitaxial planar type Unit : mm For high-frequency rectification φ 0.45 max. COLORED BAND INDICATES CATHODE Rating Unit VR 40 V VRRM 40 V IFM 1 A Average forward current IF(AV) 500 mA Non-repetitive peak forward surge current* IFSM 30 A Repetitive peak reverse voltage Peak forward current 13 min. 0.2 max. 2 Symbol Reverse voltage (DC) 2.2 ± 0.3 1st Band 2nd Band ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 0.2 max. • DO-34 (DHD) package, allowing to rectify under (IF(AV) = 500 mA) condition • Allowing high-density mounting (5 mm pitch insertion) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • High rectification efficiency caused by its low forward-risevoltage (VF) • High reliability achieved by the glass sealed package 13 min. ■ Features φ 1.75 max. 1 : Cathode 2 : Annde JEDEC : DO-34 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 35 V 100 µA Forward voltage (DC) VF IF = 500 mA 0.55 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 60 pF trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 5 ns Reverse recovery time* Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 400 MHz 3. * : trr measuring instrument ■ Cathode Indication Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse Color 1st Band 2nd Band Silver Silver t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2C719 Schottky Barrier Diodes (SBD) IF V F 25°C 104 Reverse current IR (µA) Forward current IF (mA) 0.8 0.7 − 20°C Ta = 100°C 102 VF Ta IR V R 105 10 1 10−1 Forward voltage VF (V) 103 Ta = 100°C 103 102 25°C 10 0.6 0.5 IF = 500 mA 0.4 0.3 100 mA 0.2 10 mA 0.1 10−2 0 0.1 0.2 0.3 0.4 0.5 1 0.6 0 Forward voltage VF (V) 10 20 30 40 50 Reverse voltage VR (V) IR T a VR = 40 V 35 V 5V 102 10 60 50 40 30 20 10 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 80 0 10 20 30 40 120 160 200 IF(surge) tW Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (µA) 104 0 40 10 000 80 70 1 −40 0 Ambient temperature Ta (°C) Ct VR 105 103 0 −40 60 50 Reverse voltage VR (V) 60 Ta = 25°C IF(surge) tW Non repetitive 1 000 100 10 1 0.3 1 3 10 30 Pulse width tW (ms) 100 300