ONSEMI MBR1H100SFT3G

MBR1H100SFT3G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123FL Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
100 VOLTS
Features
•
•
•
•
•
•
•
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C
Human Body Model, 3B
This is a Pb−Free Device
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
Mechanical Characteristics
•
•
•
•
•
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Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape
Device Marking: L1H
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
L1HMG
G
L1H
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
MBR1H100SFT3G SOD−123
(Pb−Free)
Shipping†
10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 0
1
Publication Order Number:
MBR1H100SF/D
MBR1H100SFT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 162°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IO
1.0
A
IFSM
50
A
Tstg, TJ
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
YJCL
23
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
85
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
330
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
0.76
0.84
0.61
0.68
40
0.5
V
mA
mA
MBR1H100SFT3G
TYPICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
150°C 125°C 25°C
10
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
150°C 125°C 25°C
10
1
0.1
1.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.6
1
IR, REVERSE CURRENT (mA)
10
150°C
0.1
125°C
0.01
0.001
0.0001
10
20
30
40
50
60
70
80
90
0.01
25°C
0.001
10
20
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
RqJL = 23°C/W
dc
1.5
Square Wave
1.0
0.5
140
125°C
0.00001
0
100
2.0
0
135
0.1
0.0001
25°C
0
150°C
1
145
150
155
160
165
170
175
PFO, AVERAGE POWER DISSIPATION (W)
IR, REVERSE CURRENT (mA)
IF(AV), AVERAGE FORWARD CURRENT (A)
0.4
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
10
0.00001
0
1.0
TJ = 175°C
Square Wave
0.8
dc
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
1.6
MBR1H100SFT3G
TYPICAL CHARACTERISTICS
140
TJ = 25°C
C, CAPACITANCE (pF)
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000
R(t) (C/W)
100
10
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
50% (DUTY CYCLE)
25%
R(t) (C/W)
10
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
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4
MBR1H100SFT3G
PACKAGE DIMENSIONS
SOD−123LF
CASE 498−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT
SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM
FROM THE LEAD TIP.
E
q
D
DIM
A
A1
b
c
D
E
L
HE
q
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
b
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MILLIMETERS
NOM
MAX
0.95
1.00
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
SOLDERING FOOTPRINT*
HE
ÉÉ
ÉÉ
ÉÉ
q
c
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉÉ
ÉÉÉ
ÉÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR1H100SF/D