MBR1H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 100 VOLTS Features • • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C Human Body Model, 3B This is a Pb−Free Device SOD−123FL CASE 498 PLASTIC MARKING DIAGRAM Mechanical Characteristics • • • • • • • • Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape Device Marking: L1H Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements L1HMG G L1H = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package MBR1H100SFT3G SOD−123 (Pb−Free) Shipping† 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 April, 2009 − Rev. 0 1 Publication Order Number: MBR1H100SF/D MBR1H100SFT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 162°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) Symbol Value Unit VRRM VRWM VR 100 V IO 1.0 A IFSM 50 A Tstg, TJ −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 23 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 0.76 0.84 0.61 0.68 40 0.5 V mA mA MBR1H100SFT3G TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 150°C 125°C 25°C 10 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 150°C 125°C 25°C 10 1 0.1 1.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.6 1 IR, REVERSE CURRENT (mA) 10 150°C 0.1 125°C 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 0.01 25°C 0.001 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current RqJL = 23°C/W dc 1.5 Square Wave 1.0 0.5 140 125°C 0.00001 0 100 2.0 0 135 0.1 0.0001 25°C 0 150°C 1 145 150 155 160 165 170 175 PFO, AVERAGE POWER DISSIPATION (W) IR, REVERSE CURRENT (mA) IF(AV), AVERAGE FORWARD CURRENT (A) 0.4 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10 0.00001 0 1.0 TJ = 175°C Square Wave 0.8 dc 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBR1H100SFT3G TYPICAL CHARACTERISTICS 140 TJ = 25°C C, CAPACITANCE (pF) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance 1000 R(t) (C/W) 100 10 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 1.0 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad) 100 50% (DUTY CYCLE) 25% R(t) (C/W) 10 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) http://onsemi.com 4 MBR1H100SFT3G PACKAGE DIMENSIONS SOD−123LF CASE 498−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. E q D DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A L b MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° SOLDERING FOOTPRINT* HE ÉÉ ÉÉ ÉÉ q c 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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