ONSEMI MBRS2H100T3G_09

MBRS2H100T3G,
MBRA2H100T3G
Surface Mount
Schottky Power Rectifier
SMA/SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
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SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 100 VOLTS
Features
•
•
•
•
•
MARKING
DIAGRAMS
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard−Ring for Overvoltage Protection
Low Forward Voltage Drop
This is a Pb−Free Device
SMA
CASE 403D
PLASTIC
AYWW
A210G
G
SMB
CASE 403A
PLASTIC
AYWW
B210G
G
Mechanical Characteristics
•
•
•
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings: Machine Model = C, Human Body Model = 3B
Device Meets MSL1 Requirements
A210
= MBRA2H100T3G
B210
= MBRS2H100T3G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRA2H100T3G
SMA
(Pb−Free)
5000 / Tape & Reel
MBRS2H100T3G
SMB
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 5
1
Publication Order Number:
MBRS2H100/D
MBRS2H100T3G, MBRA2H100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IO
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
130
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 150°C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
MBRA2H100
MBRS2H100
YJCL
14
12
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
MBRA2H100
MBRS2H100
RqJA
75
71
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
MBRA2H100
MBRS2H100
RqJA
275
230
°C/W
ELECTRICAL CHARACTERISTICS
Value
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
Maximum Instantaneous Reverse Current (Note 4)
(iF = 2.0 A)
(VR = 100 V)
Symbol
TJ = 25°C
TJ = 125°C
Unit
vF
0.79
0.65
V
IR
0.008
1.5
mA
2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board.
3. Mounted with minimum recommended pad size 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
MBRS2H100T3G, MBRA2H100T3G
TYPICAL CHARACTERISTICS
100
150°C
25°C
125°C
10
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
1
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
150°C
25°C
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10
150°C
1
IR, REVERSE CURRENT (mA)
IR, REVERSE CURRENT (mA)
125°C
0.1
1.2
10
125°C
0.1
0.01
0.001
25°C
0.0001
0.00001
10
0
10
20
30
40
50
60
70
80
90
100
150°C
1
125°C
0.1
0.01
0.001
25°C
0
VR, REVERSE VOLTAGE (V)
10
20
30
40
50
60
70
80
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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3
90 100
MBRS2H100T3G, MBRA2H100T3G
TYPICAL CHARACTERISTICS
4.0
TJ = 25°C
f = 1 MHz
350
300
250
200
150
100
50
IF(AV), AVERAGE FORWARD CURRENT (A)
0
0
10
20
30
40
50
60
70
90
80
100
RqJA = 100°C/W
2.0
Square Wave
1.0
40
60
80
100
120
160 175
140
R(t) (C/W)
130
140
150
170
160
TJ = 175°C
4
Square Wave
3
dc
2
1
0
0
1
2
3
4
5
IO, AVERAGE FORWARD CURRENT (A)
Figure 8. Maximum Forward Power Dissipation
Figure 7. Current Derating, Ambient
10
120
5
TA, AMBIENT TEMPERATURE (°C)
100
110
Figure 6. Current Derating − Lead
dc
20
1.0
Figure 5. Typical Capacitance
RqJA = 71°C/W
0
Square Wave
2.0
TL, LEAD TEMPERATURE (°C)
dc
0
3.0
VR, REVERSE VOLTAGE (V)
4.0
3.0
RqJL = 14°C/W
dc
0
100
PFO, AVERAGE POWER DISSIPATION (W)
C, CAPACITANCE (pF)
400
IF(AV), AVERAGE FORWARD
CURRENT (A)
450
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
SMB Die X 1.8 mm Die Y 1.8 mm
PCB Cu Area 645.2 mm2 PCB Cu thk 1.0 oz
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRS2H100
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4
100
1000
MBRS2H100T3G, MBRA2H100T3G
TYPICAL CHARACTERISTICS
1000
50% (DUTY CYCLE)
R(t) (C/W)
100
10
1.0
20%
10%
5.0%
2.0%
1.0%
0.1
0.01
SMB Die X 1.8 mm Die Y 1.8 mm
PCB Cu Area 11.8 mm2 PCB Cu thk 1.0 oz
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
100
1000
100
1000
PULSE TIME (s)
Figure 10. Thermal Response, Junction−to−Ambient (min pad) − MBRS2H100
100
R(t) (C/W)
10
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
1.0%
0.1
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 11. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRA2H100
1000
50% (DUTY CYCLE)
R(t) (C/W)
100
10
1.0
20%
10%
5.0%
2.0%
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 12. Thermal Response, Junction−to−Ambient (min pad) − MBRA2H100
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5
MBRS2H100T3G, MBRA2H100T3G
2.5
2.0 oz
POWER DISSIPATION (W)
Power Based on TA = 25°C
2.0
1.0 oz
1.5
1.0
0.5
0
0
100
200
300
400
500
600
700
COPPER AREA (sq mm)
Figure 13. PD, Junction−to−Ambient (URS copper area)
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6
MBRS2H100T3G, MBRA2H100T3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
MBRS2H100T3G, MBRA2H100T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE G
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.13
2.45
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.084
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.096
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBRS2H100/D