MOTOROLA MC33661

Freescale Semiconductor, Inc.
MOTOROLA
Document order number: MC33661
Rev 3.0, 10/2004
SEMICONDUCTOR TECHNICAL DATA
Advance Information
33661
LIN Enhanced Physical Interface
Freescale Semiconductor, Inc...
Local Interconnect Network (LIN) is a serial communication protocol
designed to support automotive networks in conjunction with Controller Area
Network (CAN). As the lowest level of a hierarchical network, LIN enables
cost-effective communication with sensors and actuators when all the features
of CAN are not required.
LIN INTERFACE
The 33661 is a Physical Layer component dedicated to automotive LIN subbus applications. It offers slew rate selection for optimized operation at
10 kbps and 20 kbps, fast baud rate (above 100 kbps) for test and
programming modes, excellent radiated emission performance, and safe
behavior in the event of LIN bus short-to-ground or LIN bus leakage during
low-power mode.
Features
• Operational from VSUP 6.0 V to 18 V DC, Functional up to 27 V DC, and
Handles 40 V During Load Dump
• Active Bus Waveshaping Offering Excellent Radiated Emission
Performance
• 5.0 kV ESD on LIN Bus Terminal
• 30 kΩ Internal Pullup Resistor
• LIN Bus Short-to-Ground or High Leakage in Sleep Mode
• -18 V to +40 V DC Voltage at LIN Terminal
• 8.0 µA Standby Current in Sleep Mode
• Local and Remote Wake-Up Capability Reported by INH and RXD
Terminals
• 5.0 V and 3.3 V Compatible Digital Inputs Without Any External
Components Required
D SUFFIX
CASE 751-06
8-TERMINAL SOICN
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33661D/R2
-40°C to 125°C
8 SOICN
33661 Simplified Application Diagram
VPWR
33661
WAKE
VSUP
INH
12.0 V / 5.0 V
Regulator
EN
MCU
RXD
LIN
TXD
GND
LIN Bus
This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Motorola, Inc. 2004
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VSUP
WAKE
20 µA
INH
Control
EN
INH
Control
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RXD
30 kΩ
Receiver
LIN
TXD
Slope
Control
GND
Figure 1. 33661 Simplified Internal Block Diagram
33661
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RXD
1
8
INH
EN
2
7
VSUP
WAKE
3
6
LIN
TXD
4
5
GND
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TERMINAL DEFINITIONS
A functional description of each terminal can be found in the System/Application Information section beginning on page 13.
Terminal
Terminal
Name
Formal Name
1
RXD
Receiver Output
2
EN
Enable Control
3
WAKE
Wake Input
4
TXD
Transmitter Input
5
INH
Inhibit Output
This terminal can have two main functions: controlling an external switchable voltage
regulator or driving a bus external resistor in the master node application.
6
VSUP
Power Supply
Device power supply terminal.
7
LIN
LIN Bus
Represents the single-wire bus transmitter and receiver.
8
GND
Ground
Device ground terminal.
Definition
MCU interface that reports the state of the LIN bus voltage.
Controls the operation mode of the interface.
A high-voltage input used to wake up the device from sleep mode.
MCU interface to control the state of the LIN output.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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MAXIMUM RATINGS
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent
damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Power Supply Voltage
VSUP
27
Transient Voltage (Load Dump)
40
WAKE DC and Transient Voltage (Through a 33 kΩ Serial Resistor)
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V
Continuous Supply Voltage
VWAKE
-18 to 40
V
Logic Terminals (RXD, TXD, EN)
VLOG
-0.3 to 5.5
V
LIN
VBUS
V
-18 to 40
DC Voltage
Transient (Coupled Through 1.0 nF Capacitor)
-150 to 100
INH
DC Voltage
VINH
-0.3 to VSUP + 0.3
V
DC Current
IINH
40
mA
ESD Human Body Model (Note 1)
VESD1
V
All Terminals
±2000
LIN Terminal with Respect to Ground
±5000
ESD Machine Model (Note 2)
VESD2
V
±200
All Terminals
THERMAL RATINGS
°C
Operating Temperature
Ambient
TA
-40 to 125
Junction
TJ
-40 to 150
TS
-40 to 150
°C
RθJA
150
°C/W
TSOLDER
240
°C
Thermal Shutdown
TSHUT
150 to 200
°C
Thermal Shutdown Hysteresis
THYST
8.0 to 20
°C
Storage Temperature
Thermal Resistance Junction to Ambient
Peak Package Reflow Temperature During Solder Mounting (Note 3)
Notes
1. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω).
2.
ESD2 testing is performed in accordance with the Machine Model (CZAP = 220 pF, RZAP = 0 Ω).
3.
Terminal soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
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STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
Nominal DC Voltage
VSUP
7.0
13.5
18.0
V
Functional DC Voltage
VSUP
6.0
–
–
8.0
12
VSUP TERMINAL (DEVICE POWER SUPPLY)
TA ≥ 25°C
V
µA
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Supply Current in Sleep Mode
VSUP ≤ 13.5 V, Bus Recessive
IS1
–
13.5 V < VSUP < 18 V
IS2
–
–
200
IS3
–
300
–
Bus Recessive, Excluding INH Output Current
IS(N-REC)
–
4.0
6.0
Bus Dominant, Total Bus Load >500 Ω, Excluding INH Output Current
IS(N-DOM)
–
6.0
8.0
0
–
0.9
VEN = 5.0 V, IOUT ≤ 250 µA
4.25
–
5.25
VEN = 3.3 V, IOUT ≤ 250 µA
3.0
–
3.5
VSUP ≤ 13.5 V, Bus Dominant or Shorted to GND
Supply Current in Normal, Slow or Fast Mode
mA
RXD OUTPUT TERMINAL (LOGIC)
Low-Level Voltage Output
VOL
IIN ≤ 1.5 mA
High-Level Voltage Output
V
VOH
V
TXD INPUT TERMINAL (LOGIC)
Low-Level Voltage Input
VIL
–
–
1.2
V
High-Level Voltage Input
VIH
2.5
–
–
V
VINHYST
100
300
800
mV
-60
-35
-20
Input Threshold Hysteresis
Pullup Current Source
µA
IS1
VEN = 5.0 V, 1.0 V < VTXD < 3.5 V
ENABLE INPUT TERMINAL (LOGIC)
Low-Level Voltage Input
VIL
–
–
1.2
V
High-Level Voltage Input
VIH
2.5
–
–
V
VINHYST
100
300
800
mV
5.0
20
30
–
20
40
–
–
1.4
VSUP - 1.0
–
–
Input Threshold Hysteresis
Low-Level Input Current
µA
IIL
VIN = 1.0 V
High-Level Input Current
µA
IIH
VIN = 4.0 V
LIN BUS TERMINAL (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)
Low-Level Dominant Voltage
VLINlow
External Bus Pullup 500 Ω
High-Level Voltage
V
VLINhigh
TXD High, IOUT = 1.0 µA, Recessive State
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
V
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STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN BUS TERMINAL (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE) (continued)
Pullup Resistor to VSUP (Normal Mode)
RPU
20
30
47
kΩ
Pullup Current Source (Sleep Mode)
IPU
–
20
–
µA
IOV-CUR
50
75
150
mA
IOV-DELAY
–
10
–
µs
0
3.0
20
-1.0
–
1.0
–
1.0
10
0
–
0.4 VSUP
Overcurrent Shutdown Threshold
Overcurrent Shutdown Delay (Note 4)
Leakage Current to GND
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µA
IBUS-PAS-REC
Recessive State, 8.0 V ≤ VSUP ≤ 18 V, 8.0 V ≤ VLIN ≤ 18 V
GND Disconnected
IBUS no GND
VGND = VSUP, VLIN at -18 V
Leakage Current to GND
mA
µA
IBUS
VSUP Disconnected, VLIN at +18 V
LIN Receiver VIL
VLIN-VIL
TXD High, RXD Low
LIN Receiver VIH
V
VLIN-VIH
TXD High, RXD High
LIN Receiver Threshold Center
V
0.6 VSUP
–
VSUP
0.475
0.5
0.525
VLINTHRES
(VLIN-VIH - VLIN-VIL) / 2
LIN Receiver Input Hysteresis
VSUP
VLINHYST
VLIN-VIH - VLIN-VIL
VSUP
–
–
0.175
VLINWU
–
0.5
–
VSUP
INHON
–
35
70
Ω
0
–
5.0
HIGH-to-LOW Transition
VWUTHRESHL
0.3 VSUP
0.43 VSUP
0.55 VSUP
LOW-to-HIGH Transition
VWUTHRESLH
0.4 VSUP
0.55 VSUP
0.65 VSUP
Wake-Up Threshold Hysteresis
VWUHYST
0.1 VSUP
0.16 VSUP
0.2 VSUP
LIN Wake-Up Threshold
INHIBIT OUTPUT TERMINAL
INH Driver ON Resistance (Normal Mode)
Leakage Current (Sleep Mode)
µA
ILEAK
0 < VINH < VSUP
WAKE TERMINAL
Typical Wake-Up Threshold (EN = 0 V, 7.0 V ≤ VSUP ≤ 18 V) (Note 5)
WAKE Input Current
V < 27 V
V
V
µA
IWIN1
–
1.0
5.0
Notes
4. This parameter is guaranteed by design; however, it is not production tested.
5. When VSUP > 18 V, the wake-up thresholds remain identical to the wake-up thresholds at 18 V.
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DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
t DOM (MIN)
–
–
50
t DOM (MAX)
–
–
50
Measurement Threshold (50% TXD to 42.2% VSUP)
t REC (MIN)
–
–
50
Measurement Threshold (50% TXD to 74.4% VSUP)
t REC (MAX)
–
–
50
t DOM (MIN) to t REC (MAX)
dt1
-10.44
–
8.12
t DOM (MAX) to t REC (MIN)
dt2
-10.44
–
8.12
Measurement Threshold (50% TXD to 61.6% VSUP)
t DOM (MIN)
–
–
100
Measurement Threshold (50% TXD to 25.1% VSUP)
t DOM (MAX)
–
–
100
Measurement Threshold (50% TXD to 38.9% VSUP)
t REC (MIN)
–
–
100
Measurement Threshold (50% TXD to 77.8% VSUP)
t REC (MAX)
–
–
100
Unit
LIN OUTPUT TIMING CHARACTERISTICS FOR NORMAL SLEW RATE
µs
Dominant Propagation Delay TXD to LIN (Note 6)
Measurement Threshold (50% TXD to 58.1% VSUP)
Measurement Threshold (50% TXD to 28.4% VSUP)
µs
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Recessive Propagation Delay TXD to LIN (Note 6)
µs
Propagation Delay Symmetry
LIN OUTPUT TIMING CHARACTERISTICS FOR SLOW SLEW RATE
µs
Dominant Propagation Delay TXD to LIN (Note 6)
µs
Recessive Propagation Delay TXD to LIN (Note 6)
µs
Propagation Delay Symmetry
t DOM (MIN) to t REC (MAX)
dt1S
-21.88
–
17.44
t DOM (MAX) to t REC (MIN)
dt 2S
-21.88
–
17.44
–
15
–
–
3.5
6.0
–
3.5
6.0
-2.0
–
2.0
LIN OUTPUT DRIVER FAST SLEW RATE
LIN Fast Slew Rate (Programming Mode)
dv/dt fast
V/µs
Fast Slew Rate
LIN RECEIVER CHARACTERISTICS
Receiver Dominant Propagation Delay (Note 7)
µs
t RL
LIN LOW to RXD LOW
Receiver Recessive Propagation Delay (Note 7)
µs
t RH
LIN HIGH to RXD HIGH
Receiver Propagation Delay Symmetry
µs
t R-SYM
t RL - t RH
Notes
6. 7.0 V ≤ VSUP ≤ 18 V. Bus load R0 and C0: 1.0 nF/1.0 kΩ, 6.8 nF/660 Ω, 10 nF/500 Ω.
7.
Measured between LIN signal threshold LIN-VIL or LIN-VIH and 50% of RXD signal.
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DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN Terminal Wake-Up Filter Time (LIN Bus Wake-Up)
t WUF
40
70
120
µs
EN Terminal Wake-Up Time
t LWUE
–
5.0
15
µs
WAKE Terminal Filter Time
t WF
10
–
70
µs
Sleep Mode Delay
t SD
–
40
–
t D_MS
5.0
–
–
µs
t D_COM
50
–
–
µs
SLEEP MODE AND WAKE-UP TIMINGS
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EN HIGH to LOW
Delay Between EN and TXD for Mode Selection (Note 8)
Delay Between First TXD after Device Mode Selection (Note 8)
µs
Notes
8. This parameter is guaranteed by design; however, it is not production tested.
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Timing Diagrams
VSUP
VSUP
TXD
R0
LIN
RXD
GND
C0
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Note R0 and C0: 1.0 kΩ/1.0 nF, 660 Ω/6.8 nF, and 500 Ω/10 nF.
Figure 2. Test Circuit for Timing Measurements
TXD
Recessive State
VREC
t REC(MAX)
LIN
74.4% VSUP
58.1% VSUP
t DOM(MIN)
60% VSUP
40% VSUP
42.2% VSUP
28.4% VSUP
t DOM(MAX)
t REC(MIN)
RXD
tRH
tRL
Figure 3. Timing Measurements for Normal Slew Rate
TXD
Recessive State
t REC(MAX)
VREC
LIN
77.8% VSUP
61.6% VSUP
t DOM(MIN)
60% VSUP
40% VSUP
t DOM(MAX)
38.9% VSUP
25.1% VSUP
t REC(MIN)
RXD
t RL
t RH
Figure 4. Timing Measurements for Slow Slew Rate
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Functional Diagrams
EN
EN
INH
INH
t LWUE
t LWUE
TXD
TXD
t D_MS
t D_MS
t D_COM
LIN
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LIN
RXD
RXD (High Z)
(High Z)
Figure 8. EN Terminal Wake-Up and
Slow Baud Rate Selection
Figure 5. EN Terminal Wake-Up and
Normal Baud Rate Selection
WAKE
WAKE
t WF
t WF
INH
INH
EN
EN
TXD
TXD
t D_MS
t D_COM
t D_MS
RXD (High Z)
(High Z)
Figure 9. WAKE Terminal Wake-Up and
Slow Baud Rate Selection
Figure 6. WAKE Terminal Wake-Up and
Normal Baud Rate Selection
Wake-Up Frame
LIN
0.4 VSUP
t WUF
INH
INH
EN
EN
TXD
TXD
t D_MS
t D_COM
(High Z)
t D_MS
RXD
Figure 7. LIN Bus Wake-Up and
Normal Baud Rate Selection
33661
10
Wake-Up Frame
0.4 VSUP
LIN
tWUF
RXD
t D_COM
LIN
LIN
RXD
t D_COM
t D_COM
(High Z)
Figure 10. LIN Bus Wake-Up and
Slow Baud Rate Selection
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EN = 1 and TXD = 1
EN
EN
TXD
t 2 (5.0 µs)
EN = 0 and TXD = 1
Toggle
t 1 (35 µs)
Reset to Previous Baud Rate
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Figure 11. Fast Baud Rate Selection (Toggle Function)
EN
TXD (H)
Device in Communication Mode
Preparation to Sleep Mode
Sleep Mode
t SD
Figure 12. Sleep Mode Enter
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Unpowered
TXD HIGH and EN LOW > t1 (35 µs)
Fast
TXD HIGH and EN LOW to
HIGH
Toggle function
Bus or WAKE terminal
wake-up
Awake
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Sleep
TXD HIGH and EN LOW to HIGH
TXD LOW and EN
LOW to HIGH
Normal
EN LOW for t 1 < 5.0 µs,
then HIGH
EN LOW for t 1 < 5.0 µs,
then HIGH
TXD HIGH
Wait Slow
TXD LOW and EN LOW to HIGH
EN LOW for t 1 < 5.0 µs,
then HIGH
Slow
Toggle function
TXD HIGH and EN LOW > t1 (35 µs)
EN LOW for t 1 < 5.0 µs, then HIGH
Fast
Note See Table 1 for explanation of mode transitions.
Figure 13. Mode Transitions
Table 1. Explanation of Mode Transitions
Mode
Bus
INH
EN
TXD
RXD
Sleep
Recessive state, driver off.
20 µA pullup current source.
OFF
LOW
X
High impedance. HIGH if external
pullup to VDD.
Awake
Recessive state, driver off.
30 kΩ pullup active.
ON
LOW
X
Low. If external pullup, HIGH-toLOW transition reports wake-up.
Normal
Driver active. 30 kΩ pullup active.
Slew rate normal (20 kbps).
ON
HIGH
HIGH to enter normal mode. Once in
normal mode: LOW to drive bus in
dominant, HIGH to drive bus in
recessive.
Wait
Slow
Recessive state. Driver off.
30 kΩ pullup active.
ON
HIGH
LOW
Slow
Driver active. 30 kΩ pullup active.
Slew rate slow (10 kbps).
ON
HIGH
LOW to enter slow mode. Once in
slow mode: LOW to drive bus in
dominant, HIGH to drive bus in
recessive.
Report bus level:
• Low bus dominant
• High bus recessive
Fast
Driver active. 30 kΩ pullup active.
Slew rate slow (> 100 kbps).
ON
HIGH
LOW to drive bus in dominant, HIGH
to drive bus in recessive.
Report bus level:
• Low bus dominant
• High bus recessive
Report bus level:
• Low bus dominant
• High bus recessive
HIGH
X = Don’t care.
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SYSTEM/APPLICATION INFORMATION
INTRODUCTION
The 33661 is a Physical Layer component dedicated to
automotive LIN sub-bus applications.
Digital inputs are 5.0 V and 3.3 V compatible without any
external component required.
The 33661 features include slew rate selection for optimized
operation at 10 kbps and 20 kbps, fast baud rate for test and
programming modes, excellent radiated emission performance,
and safe behavior in case of LIN bus short-to-ground or LIN bus
leakage during low power mode.
The INH output may be used to control an external voltage
regulator or to drive a LIN bus pullup resistor.
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FUNCTIONAL TERMINAL DESCRIPTION
VSUP Supply Terminal
The VSUP supply terminal is the power supply terminal for the
33661.
level at EN defines the VOH at RXD. The sleep mode is entered
by setting EN LOW while TXD is HIGH. Sleep mode is active
after the t1 filter time (see Figure 12, page 11).
INH Output Terminal
LIN Bus Terminal
This I/O terminal represents the single-wire bus transmitter
and receiver.
TXD Input Terminal
The TXD input terminal is the MCU interface to control the
state of the LIN output. When TXD is LOW, LIN output is LOW;
when TXD is HIGH, the LIN output transistor is turned OFF. The
threshold is 3.3 V and 5.0 V compatible. The baud rate
selection (normal or slow mode) is done at device wake-up by
the state of the TXD terminal prior to a HIGH level at the EN
terminal (see Figures 5 through 10, page 10).
RXD Output Terminal
The RXD output terminal is the MCU interface, which reports
the state of the LIN bus voltage. LIN HIGH (recessive) is
reported by a high voltage on RXD; LIN LOW (dominant) is
reported by a low voltage on RXD. The RXD output structure is
a CMOS-type push-pull output stage.
The low level is fixed. The high level is dependant on the EN
voltage. If EN is set at 3.3 V, RXD VOH is 3.3 V. If EN is set at
5.0 V, RXD VOH is 5.0 V.
In the sleep mode, RXD is high impedance. When a wake-up
event is recognized from WAKE terminal or from the LIN bus
terminal, RXD is pulled LOW to report the wake-up event. An
external pullup resistor may be needed.
EN Input Terminal
The EN input terminal controls the operation mode of the
interface. If EN = 1, the interface is in normal mode, with
transmission path from TXD to LIN and from LIN to RXD both
active. The threshold is 3.3 V and 5.0 V compatible. The high
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
The INH output terminal may have two main functions. It may
be used to control an external switchable voltage regulator
having an inhibit input. The high drive capability also allows it to
drive the bus external resistor in the master node application.
This is illustrated in Figures 16 and 17, page 17.
In sleep mode, INH is turned OFF. If a voltage regulator
inhibit input is connected to INH, the regulator will be disabled.
If the master node pullup resistor is connected to INH, the
pullup resistor will be disabled from the LIN bus.
WAKE Input Terminal
The WAKE terminal is a high-voltage input used to wake up
the device from the sleep mode. WAKE is usually connected to
an external switch in the application. The typical wake thresholds
are VSUP /2.
The WAKE terminal has a special design structure and
allows wake-up from both HIGH-to-LOW or LOW-to-HIGH
transitions. When entering into sleep mode, the LIN monitors
the state of the WAKE terminal and stores it as a reference
state. The opposite state of this reference state will be the
wake-up event used by the device to enter again into normal
mode.
An internal filter is implemented (40 µs typical filtering time
delay). WAKE terminal input structure exhibits a high
impedance, with extremely low input current when voltage at
this terminal is below 14 V. When voltage at the WAKE terminal
exceeds 14 V, input current starts to sink into the device. A
serial resistor should be inserted in order to limit the input
current mainly during transient pulses. Recommended resistor
value is 33 kΩ.
Important The WAKE terminal should not be left open. If
the wake-up function is not used, WAKE should be connected
to ground to avoid false wake-up.
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OPERATIONAL MODES
Introduction
Sleep Mode
The 33661 has two communication modes, transmitting and
receiving modes, and two operational modes, normal and
sleep. The normal mode is differentiated by the slew rate—
normal, slow, or fast—of the LIN output.
In the sleep mode, the transmission path is disabled and the
33661 is in low power mode. Supply current from VSUP is very
low. Wake-up can occur from LIN bus activity from node internal
wake-up through the EN terminal and from the WAKE input
terminal.
Operational Modes
In the sleep mode, the 33661 has an internal 20 µA pullup
source to VSUP. This avoids the high current path from the
battery to ground in the event the bus is shorted to ground.
(Refer to succeeding paragraphs describing wake-up
behavior.)
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Normal Mode
In the normal mode, the 33661 has slew rate and timing
compatible with the LIN protocol specification and can operate
at 20 kbps. This mode is selected after sleep mode by setting
the TXD terminal HIGH prior to setting EN from LOW to HIGH.
Once normal mode is selected, it is impossible to select the
slow mode unless the 33661 is set to sleep mode.
Slow Mode
In the slow mode, the slew rate is around half the normal
slew rate, and bus speed operation is limited up to 10 kbps. The
radiated emission is significantly reduced compared to the
already excellent emission level of the normal mode. Slow
mode is entered after sleep mode by setting the TXD terminal
LOW prior to setting EN from LOW to HIGH. Once the slow
mode is selected, it is impossible to select the normal mode
unless the device is set to sleep mode.
Fast Mode
Device Wake-Up Events
The 33661 can be awakened from sleep mode by three
wake-up events: remote wake-up via LIN bus activity, internal
node wake-up via the EN terminal, or toggling the WAKE
terminal.
Remote Wake from LIN Bus
The LIN bus wake-up is recognized by a recessive-todominant transition, followed by a dominant level with a
duration greater than 70 µs, followed by a dominant-torecessive transition. This is illustrated in Figures 7 and 10 on
page 10. Once the wake-up is detected, the 33661 enters the
“awake” mode, with INH HIGH and RXD pulled LOW.
Wake-Up from Internal Node Activity
In the fast mode, the slew rate is around 10 times faster than
the normal mode. This allows very fast data transmission
(>100 kbps)—for instance, for ECU tests and microcontroller
program download. The bus pullup resistor might be reduced to
ensure a correct RC time constant in line with the high baud rate
used. Fast mode is entered via a special sequence (call toggle
function) at the TXD and EN terminals described in Figure 11
on page 11. Fast mode can be selected from either normal or
slow mode. Once in fast mode, the toggle function will bring the
device back in the previously selected mode (normal or slow).
A glitch on EN will also reset the device to the previously
selected mode (normal or slow) as shown in Figure 11 on
page 11.
The 33661 can wake up by internal node activity through a
LOW-to-HIGH transition of the EN terminal. When EN is
switched from LOW to HIGH, the device is awakened and
enters either the “normal” or the “wait slow” mode depending on
the level of TXD input. The MCU must set the TXD terminal
LOW or HIGH prior to waking up the device through the EN
terminal.
Wake-Up from WAKE Terminal
If the WAKE input terminal is toggled, the 33661 enters the
“awake” mode, with INH HIGH and RXD pulled LOW.
Device Power-Up
At power-up (VSUP rises from zero), the 33661 automatically
switches in the “awake” mode. It switches the INH terminal to
HIGH state and RXD to LOW state. The MCU of the application
will then confirm normal or slow mode by setting the TXD and
EN terminals appropriately.
33661
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ELECTROMAGNETIC COMPATIBILITY INFORMATION
Radiated Emission in Normal and Slow Modes
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The 33661 has been tested for radiated emission
performances. Figures 14 and 15 show the results in the
frequency range 100 kHz to 2.0 MHz. Test conditions are in
accordance with CISPR25 recommendations, bus length of
1.5 meter, device loaded with 10 nF and 500 Ω bus impedance.
Figure 14 displays the results when the device is set in the
normal mode, optimized for baud rate up to 20 kbps. Figure 15
displays the results when the device is set in the slow mode,
optimized for baud rate up to 10 kbps. The level of emissions is
significantly reduced compared to the already excellent level of
the normal mode.
Figure 14. Radiated Emission in Normal Mode
Figure 15. Radiated Emission in Slow Mode
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APPLICATIONS
Motorola Device Compatibility: 33661 and 33399
The two Motorola devices are terminal-to-terminal
compatible. Table 2 summarizes the differences between the
two devices.
Table 2. Compatibility Comparison
Parameter
Terminal Out and
Package
33399
8-terminal SOICN.
2 baud rate operations: from 1.0 to 10 kbps and from 1.0 to
20 kbps.
1 baud rate operation from 1.0 to 20 kbps.
Capable of:
• Controlling an external switchable voltage regulator.
• Driving a bus master termination resistor.
Capable of controlling an external switchable voltage
regulator.
WAKE Terminal
Identical to 33399.
Identical to 33661.
TXD, RXD, EN
5.0 V and 3.3 V compatible.
5.0 V compatible only.
In normal, slow, and fast mode, 30 kΩ pullup. In sleep mode
and bus short-to-ground, 20 µA pullup.
30 kΩ pullup in normal and sleep modes.
Typical 8.0 µA.
Typical 20 µA, maximum 50 µA.
Normal, slow, fast, and sleep modes.
Normal and sleep modes.
Normal Mode
Selected by TXD HIGH, then EN HIGH at device wake-up.
Operation up to 20 kbps.
Selected by TXD high and EN high at device wake-up.
Operation up to 20 kbps.
Slow Mode
Selected by TXD LOW, then EN HIGH at device wake-up.
Operation up to 10 kbps.
N/A
Fast Mode
Selected by sequence at TXD and EN. Operation at baud
rate >100 kbps.
N/A
Sleep Mode
and Bus Wake-Up
Recessive-to-dominant transition, followed by a dominant
state of more than 70 µs, followed by a dominant-torecessive transition.
Dominant level, 50 µs duration.
Slew Rate
Three slew rates: Normal (20 kbps), Slow (10 kbps), and
Fast (>100 kbps). Normal and slow mode selected by EN
and TXD terminal sequence at device wake-up. The
sequence to enter normal mode is the same for both the
33399 and 33661.
One slew rate: 20 kbps.
Wake-Up from
Internal Node Activity
(LOW to HIGH
transition of EN)
If TXD is set HIGH and then EN is switched HIGH, the
33661 wakes up and the Normal Mode is selected. In this
setup sequence, there is a direct compatibility between
33399 and 33661.
TXD must be set HIGH prior to setting EN HIGH in order to
avoid having the device send a dominant level on the bus at
wake-up.
Radiated Emission
The level of radiated emissions measured in identical
configurations is lower for the 33661 compared to the 33399
in the normal mode, allowing operation up to 20 kbps. If the
33661 device is set to the slow mode, allowing operation up
to 10 kbps, the radiated emission level is significantly
reduced.
The level of radiated emissions measured in identical
configurations is higher for the 33399 compared to the
33661 in the normal mode.
Baud Rate Operation
INH Output
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33661
8-terminal SOICN.
LIN Bus Termination
Sleep Current
Mode
33661
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Typical Applications
Figures 16 and 17 show typical applications of the 33661.
VBAT
33661
VSUP
> 33 kΩ
External
Switch
WAKE
EN
I/O
20 µA
INH
Control
Master Node
Pullup
Freescale Semiconductor, Inc...
VDD
INH
Control
MCU
*
VDD
RXD
VREG 12 V
VDD
5.0 V
30 kΩ
LIN
Receiver
LIN Bus
TXD
TXD
(* optional)
1.0 kΩ
RXD
GND
Slope
Control
Figure 16. Master Node Typical Application
VBAT
33661
VSUP
> 33 kΩ
External
Switch
WAKE
EN
I/O
20 µA
INH
Control
VDD
INH
Control
MCU
*
VDD
RXD
VREG 12 V
5.0 V
RXD
VDD
30 kΩ
Receiver
LIN
LIN Bus
INH
TXD
TXD
(* optional)
Slope
Control
GND
Figure 17. Slave Node Typical Application
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PACKAGE DIMENSIONS
D SUFFIX
8-TERMINAL SOIC NARROW BODY
PLASTIC PACKAGE
CASE 751-06
ISSUE T
D
A
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
C
5
0.25
H
E
M
B
M
1
Freescale Semiconductor, Inc...
4
h
B
e
X 45˚
θ
A
C
SEATING
PLANE
L
0.10
A1
B
0.25
33661
18
M
C B
S
A
S
DIM
A
A1
B
C
D
E
e
H
h
L
θ
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.35
0.49
0.19
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0˚
7˚
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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NOTES
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MC33661