Ordering number : ENA0959A MCH6337 P-Channel Power MOSFET http://onsemi.com –20V, –4.5A, 49mΩ, Single MCPH6 Features • • • Low ON-resistance 1.8V drive Protection diode in • • Ultrahigh-speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --20 V ±10 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) --4.5 A --18 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 4 0 to 0.02 1 2 0.3 0.85 1 6 2 5 3 4 YL TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6337-TL-E MCH6337-TL-H 0.15 2.1 1.6 0.25 2.0 Electrical Connection 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 1, 2, 5, 6 3 MCPH6 4 Semiconductor Components Industries, LLC, 2013 July, 2013 61312 TKIM/13008PE TIIM TC-00001170 No. A0959-1/7 MCH6337 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V --20 VDS=--10V, ID=--1mA VDS=--10V, ID=--3A --0.4 3.5 ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V typ Unit max V --1 μA ±10 μA --1.3 5.9 V S 37 49 mΩ 53 75 mΩ 85 130 mΩ 670 pF 130 pF Crss 94 pF Turn-ON Delay Time td(on) 8.4 ns Rise Time tr td(off) 45 ns 69 ns Turn-OFF Delay Time Fall Time VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, VGS=--4.5V, ID=--4.5A IS=--4.5A, VGS=0V 63 ns 7.3 nC 1.3 nC 2.1 nC --0.82 --1.2 V Switching Time Test Circuit VDD= --10V VIN 0V --4.5V ID= --3A RL=3.33Ω VIN D VOUT PW=10μs D.C.≤1% G MCH6337 P.G 50Ω S Ordering Information Package Shipping memo MCH6337-TL-E Device MCPH6 3,000pcs./reel Pb Free MCH6337-TL-H MCPH6 3,000pcs./reel Pb Free and Halogen Free No. A0959-2/7 MCH6337 ID -- VDS --6.0 V --4.0 ID -- VGS --7 --4.5V --2.5 V --4.5 VDS= --10V --1.8V --6 --2.0 VGS= --1.5V --1.5 --4 --3 --2 --25°C --2.5 --5 Ta=7 5°C --3.0 Drain Current, ID -- A --8.0V Drain Current, ID -- A --3.5 --1 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 140 120 ID= --0.5A --1.5A 80 --3.0A 60 40 20 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 5A 80 --1.5A , I D= V 5 . 2 = -VGS --3.0A ,I = --4.5V D = V GS 60 40 20 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 10 140 160 IT13001 IS -- VSD --10 7 5 VGS=0V 3 7 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --2.5 IT12999 --0. , I D= --1.8V = VGS 100 0 --60 --8 VDS= --10V 5 3 = Ta 2 5°C --2 °C 75 1.0 °C 25 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0.1 --0.01 --2.0 120 IT13000 | yfs | -- ID 2 --1.5 RDS(on) -- Ta 140 180 0 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 100 --0.5 IT12998 RDS(on) -- VGS 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.9 Ta=7 5°C 25°C --25° C 0 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 0 5 7 --10 IT13002 --0.4 --0.6 --0.8 --1.0 --1.2 IT13003 Ciss, Coss, Crss -- VDS 3 VDD= --10V VGS= --4.5V 7 5 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 2 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 25°C --1.0 td(off) tf 100 7 5 3 2 tr td(on) 10 Ciss 7 5 3 2 Coss Crss 100 7 5 3 --0.01 1000 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT13004 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT13005 No. A0959-3/7 MCH6337 VGS -- Qg 5 3 2 VDS= --10V ID= --4.5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 8 IT13006 PD -- Ta 1.6 Allowable Power Dissipation, PD -- W 7 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO PW≤10μs 10 0μ s ID= --4.5A 1m s 1 0 DC ms op 1 era 00m tio n( s Ta =2 5° C) Operation in this area is limited by RDS(on). IDP= --18A Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT13007 When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12997 No. A0959-4/7 MCH6337 Taping Specification MCH6337-TL-E, MCH6337-TL-H No. A0959-5/7 MCH6337 Outline Drawing MCH6337-TL-E, MCH6337-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A0959-6/7 MCH6337 Note on usage : Since the MCH6337 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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