T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-30H22 Package Dimensions The MID-30H22 is a NPN silicon phototransistor mou- Unit : mm (inches ) nted in a lensed , special dark plastic package.The lens- ψ3.00 (.118) ing effect of the package allows an acceptance half view 4.00 (.157) angle of 10° that is measured from the optical axis to the 5.25 (.207) half power point . 1.00 (.040) 0.80±0.50 (.032±.020) FLAT DENOTES COLLECTOR 23.40MIN (.920) 0.50 TYP (.020) Features 1.00MIN (.040) l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l Good spectral matching to IRED (λp=850nm) type. l Acceptance view angle : 20o 2.54 (.100) E C Notes : 1. Tolerance is ± 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 0.8 mm (.031") max 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-30H22 . @ TA=25oC Max. Unit V Optical-Electrical Characteristics Symbol V(BR)CEO Min. 30 V(BR)ECO 5 Iceo-Collector Dark Current -µA Tr Tf Rise and Fall Time - µS 100 10 1 0.1 0.01 0.001 0 40 80 120 TA- Ambient Temperature -oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 160 120 80 40 0 0 2 4 6 8 10 0.4 Tr Tf V µS 15 15 ICEO 100 IC(ON) nA 2 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 mA Vce = 5 V Ee = 0.1 mW/cm2 λ -75 -25 25 75 125 TA - Ambient Temperature - oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE 10 Vce = 5 V 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Ee - Irradiance - mW/cm2 FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE 0° 10° 20° 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% Relative Sensitivity Relative Spectral Sensitivity RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE V VCE(SAT) Typical Optical-Electrical Characteristic Curves 1000 Typ . IC Normalized Collector Current Test Conditions Ic=0.1mA Ee=0 Ie=0.1mA Ee=0 Ic=0.5mA Ee=0.1mW/cm2 VCC =5V, RL=1KΩ IC=1mA VCE=10V Ee=0 VCE=5V Ee=0.1mW/cm2 Relative Collector Current (mA) Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current 600 700 800 900 1000 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 30° 40° 50° 60° 70 80° 90° 1. 0 0. 9 0.5 0.3 0.1 0.2 0.4 0.6 FIG.6 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002