isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJE5170/5171/5172 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -120V(Min)- MJE5170 = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 ·Low Saturation Voltage ·Complement to Type MJE5180/5181/5182 APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE MJE5170 -120 MJE5171 -140 MJE5172 -160 MJE5170 -120 MJE5171 -140 MJE5172 -160 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A Base Current-Continuous -2 A IB B PC PC TJ Tstg Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ 65 W 2 150 ℃ -65~150 ℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJE5170/5171/5172 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJE5170 VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5171 MIN MAX UNIT -120 IC= -30mA ;IB= 0 B MJE5172 V -140 -160 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -4V -2.0 V MJE5170 VCE= -60V; IB= 0 -0.7 MJE5171 VCE= -70V; IB= 0 -0.7 MJE5172 VCE= -80V; IB= 0 -0.7 MJE5170 VCE= -120V;VEB= 0 -0.4 MJE5171 VCE= -140V;VEB= 0 -0.4 MJE5172 VCE= -160V;VEB= 0 -0.4 -1.0 ICEO ICES Collector Cutoff Current Collector Cutoff Current B B B B IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -0.3A; VCE= -4V 30 hFE-2 DC Current Gain IC= -3A; VCE= -4V 15 Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V;ftest= 1.0MHz 1.0 fT isc Website：www.iscsemi.cn 2 mA mA mA 100 MHz