Order this document by MJL3281A/D SEMICONDUCTOR TECHNICAL DATA " ! *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — High Gain — 60 to 175 — hFE = 45 (Min) @ IC = 8 A • Low Harmonic Distortion • High Safe Operation Area — 1 A/100 V @ 1 sec • High fT — 30 MHz Typical CASE 340G–02, STYLE 2 TO–264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCEO 200 Vdc Collector–Base Voltage VCBO 200 Vdc Emitter–Base Voltage VEBO 7 Vdc Collector–Emitter Voltage — 1.5 V VCEX 200 Vdc Collector Current — Continuous Collector Current — Peak (1) IC 15 25 Adc Base Current — Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.7 °C/W Rating Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJL3281A ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 200 — — Vdc Emitter–Base Voltage (IE = 100 µAdc, IC = 0) VEBO 7 — — Vdc Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO — — 50 µAdc Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO — — 5 µAdc Emitter Cutoff Current (VEB = 7 Vdc, IC = 0) IEBO — — 25 µAdc 4 1 — — — — 60 60 60 60 60 45 12 125 — — — 115 — 35 175 175 175 175 175 — — VCE(sat) — — 3 Vdc fT — 30 — MHz Cob — — 600 pF Characteristic OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non–repetitive) (VCE = 100 Vdc, t = 1 s (non–repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) hFE DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%. 2 Motorola Bipolar Power Transistor Device Data MJL3281A TYPICAL CHARACTERISTICS NPN MJL3281A VCE = 10 V 10 VCE = 5 V TJ = 25°C ftest = 1 MHz 1 0 1 2 3 4 5 6 7 8 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP MJL1302A 100 100 VCE = 10 V 10 VCE = 5 V TJ = 25°C ftest = 1 MHz 1 0 1 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) Figure 1. Current–Gain — Bandwidth Product Figure 2. Current–Gain — Bandwidth Product PNP MJL1302A NPN MJL3281A 1000 100 hFE, DC CURRENT GAIN 1000 hFE, DC CURRENT GAIN 2 IC, COLLECTOR CURRENT (AMPS) VCE = 20 V VCE = 20 V 100 VCE = 5 V VCE = 5 V 10 0.1 1 10 10 0.1 100 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain Figure 4. DC Current Gain PNP MJL1302A NPN MJL3281A 1000 1000 VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 5 V 25°C 100°C 100 10 0.1 100 IC, COLLECTOR CURRENT (AMPS) – 25°C 1 10 100 25°C 100°C 100 10 0.1 – 25°C 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V Motorola Bipolar Power Transistor Device Data 100 3 MJL3281A TYPICAL CHARACTERISTICS PNP MJL1302A NPN MJL3281A VBE(on), BASE–EMITTER VOLTAGE (VOLTS) VBE(on), BASE–EMITTER VOLTAGE (VOLTS) 1.8 TJ = 25°C 1.6 1.4 1.2 1 10 11 12 13 14 15 16 17 18 19 3.2 2.4 2 1.6 1.2 0.8 0.4 0 20 TJ = 25°C 2.8 0 2 4 IC, COLLECTOR CURRENT (AMPS) 6 Figure 7. Typical Base–Emitter Voltage 14 16 18 20 NPN MJL3281A IB = 1 A 0.6 A IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 12 20 TJ = 25°C 0.4 A 0.8 A 16 10 Figure 8. Typical Base–Emitter Voltage PNP MJL1302A 20 8 IC, COLLECTOR CURRENT (AMPS) 0.2 A 12 8 4 IB = 1 A 0.4 A 0.6 A 0.8 A 16 0.2 A 12 8 4 TJ = 25°C 0 0 1 2 3 4 5 6 7 8 9 10 0 0 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 9. Typical Output Characteristics Figure 10. Typical Output Characteristics 10 IC, COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 1 250 ms 1s 0.1 1 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 11. Forward Bias Safe Operating Area (FBSOA) 4 Motorola Bipolar Power Transistor Device Data MJL3281A PACKAGE DIMENSIONS 0.25 (0.010) M T B M –Q– –B– –T– C E U N A 1 R 2 L 3 –Y– P K W F 2 PL G J H D 3 PL 0.25 (0.010) M Y Q S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 340G–02 TO–264 ISSUE E Motorola Bipolar Power Transistor Device Data 5 MJL3281A Motorola reserves the right to make changes without further notice to any products herein. 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