MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VDG VGS IGF TJ TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Junction Temperature Storage Temperature Range Value Units 25 -25 10 150 -55 to +150 V V mA °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* TA=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient RθJA * Device mounted on a minimum pad. Value Units 460 3.68 270 mW mW/°C °C/W Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage Gate Reverse Current IGSS Conditions Min. IG = -10μA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C VDS = 15V, ID = 10nA -25 Gate-Source Cutoff Voltage VGS(off) On Characteristics Zero-Gate Voltage Drain Current* VDS = 15V, IGS = 0 IDSS Drain-Source On Resistance VDS ≤ 0.1V, VGS = 0 rDS(on) Small Signal Characteristics Drain-Gate &Source-Gate On VDS = 0, VGS = 0, f = 1.0MHz Cdg(on) Capacitance Csg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10V, f = 1.0MHz Cdg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10V, f = 1.0MHz Csg(off) * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2011 Fairchild Semiconductor Corporation MMBFJ110 Rev. A0 -0.5 Max. Units -3.0 -200 -4.0 V nA nA V 18 mA Ω 85 pF 15 15 pF pF 10 www.fairchildsemi.com 1 MMBFJ110 — N-Channel Switch April 2011 MMBFJ110 — N-Channel Switch Typical Performance Characteristics Common Drain-Source Common Drain-Source 50 100 - DRAIN CURRENT (mA) - DRAIN CURRENT (mA) - 2.0 V V GS = 0 V 80 - 1.0 V - 3.0 V 60 40 - 4.0 V T A = 25캜 °C 0 30 V GS = 0 V 20 - 0.1 V 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) 0 2 0 Figure 1. Common Drain-Source r DS - DRAIN "ON" RESISTANCE (Ω) C ts (C rs ) - CAPACITANCE (pF) C rss (VDS = 0 ) -20 50 r DS - NORMALIZED RESISTANCE 500 = 3.0 nA r DS 100 50 5 I DSS _ 0.1 10 _ _ _ _ 0.5 1 5 10 VGS (OFF) - GATE CUTOFF VOLTAGE (V) Figure 4. Parameter Interactions Noise Voltage vs Frequency 100 100 e n - NOISE VOLTAGE (nV / √ Hz) VGS(off) @ 5.0V, 10 μA r DS VGS 1 -________ VGS(off) 5 2 1 V DG = 10V 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 0.01 0.03 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) Figure 5. Normalized Drain Resistance vs Bias Voltage 0.1 0.5 1 2 10 f - FREQUENCY (kHz) 100 Figure 6. Noise Voltage vs Frequency © 2011 Fairchild Semiconductor Corporation MMBFJ110 Rev. A0 D 10 Normalized Drain Resistance vs Bias Voltage 10 r DS @ V DS = 100mV, V GS = 0 V GS(off) @ V DS = 5.0V, I Figure 3. Capacitance vs Gate-Source Voltage r DS = 1,000 I DSS @ V DS = 5.0V, °C V GS = 0 PULSED DRAIN CURRENT (mA) 10 100 DSS - C iss (V DS = 5.0V) 20 5 I f = 0.1 - 1.0 MHz -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) 1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE (V) Parameter Interactions Common Drain-Source 50 - 0.4 V - 0.5 V Figure 2. Common Drain-Source 100 0 - 0.3 V - 0.2 V 10 I - 5.0 V 0 40 D TYP V GS(off) = - 5.0 V I D 20 T A = 25캜 °C TYP V GS(off) = - 0.7 V www.fairchildsemi.com 2 MMBFJ110 — N-Channel Switch Typical Performance Characteristics (Continued) Switching Turn-On Time vs Drain Current Switching Turn-On Time vs Gate-Source Cutoff Voltage 50 TA = 25°C 캜 t OFF - TURN-OFF TIME (ns) t ON ON - TURN-ON TIME (ns) 10 VDD = 1.5V 8 V GS(off) = - 12V 6 I D = 30 mA 4 I D = 10 mA 2 0 0 On Resistance vs Drain Current 100 V GS = 0 V GS(off) = - 3.0V 125캜 °C °C 125캜 10 25캜 °C 5 °C - 55캜 V GS(off) = - 5.0V 25캜 °C 1 1 ID 10 - DRAIN CURRENT (mA) 100 Transconductance vs Drain Current T A = 25캜 °C T A = - 55캜 °C V DG = 10V °C T A = 25캜 f = 1.0 kHz °C T A = 125캜 V GS(off) = - 3.5V 20 TA = 25캜 °C VDD = 1.5V 10 V GS(off) = - 12V 0 5 10 15 20 I D - DRAIN CURRENT (mA) 25 Output Conductance vs Drain Current 100 V DG = 5.0V 10V VGS(off) 5.0V 15V 20V - 4.0V 10V 10 5.0V 15V 10V 20V 15V - 2.0V 20V T A = 25캜 °C f = 1.0 kHz - 1.0V 1 0.1 1 I D - DRAIN CURRENT (mA) 10 Figure 10. Output Conductance vs Drain Current 700 600 Power Dissipation, [mW] g fs - TRANSCONDUCTANCE (mmhos) Figure 9. On Resistance vs Drain Current 100 V GS(off) = - 5.5V Figure 8. Switching Turn-On Time vs Drain Current g os - OUTPUT CONDUCTANCE ( μ mhos) r DS - DRAIN "ON" RESISTANCE (Ω) Figure 7. Switching Turn-On Time vs Gate-Source Cutoff Voltage V GS(off) = - 8.5V 30 0 -2 -4 -6 -8 -10 VGS(off) GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) 50 40 10 V GS(off) = - 1.0V V GS(off) = - 3.0V 500 400 300 200 100 V GS(off) = - 5.0V 1 0.1 ID 1 - DRAIN CURRENT (mA) 0 10 0 40 60 80 100 120 140 160 o Ambient Temperature, Ta[ C] Figure 11. Transconductance vs Drain Current © 2011 Fairchild Semiconductor Corporation MMBFJ110 Rev. A0 20 Figure 12. Power Dissipation vs Ambient Temperature www.fairchildsemi.com 3 MMBFJ110 — N-Channel Switch Physical Dimensions SuperSOT-3 Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation MMBFJ110 Rev. 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